Magneto-optical Studies of Semiconductor Heterostructures PDF Download

Author: David Kinder
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 288

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Author: Wong Siu Ling
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 352

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Author: Chin-chi Chang
Publisher:
ISBN:
Category : Infrared spectroscopy
Languages : en
Pages : 290

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Author: Wong Siu Ling
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 0

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Author: Peter Jens Klar
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: Imran Khan
Publisher:
ISBN:
Category :
Languages : en
Pages : 94

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In this thesis we describe magneto-optical studies of three semiconductor heterostructures. In the first study we have recorded the electroluminescence (EL) from Fe spin light emitting diodes (spin-LEDs) in which the intrinsic wide GaAs quantum well (QW) is populated by holes. The emission characteristics from this system is compared with those from Fe spin-LEDs in which the GaAs QW is populated by electrons, studied earlier. In the second project we have studied the magneto-EL spectra from a LED in which the GaAs quantum wells in the intrinsic region of the device are populated by a dense two-dimensional electron gas. This experiment yielded spin splittings of the h1 valence sub-band Landau levels. The third project involved a magneto-photoluminencence (PL) study of ZnMnTe quantum dots (QDs) embedded in a ZnSe matrix. This system shows evidence of the spontaneous formation of a polaron. At low temperatures the polaron consists of an electron in the ZnSe matrix, a hole and a Mn ion in the ZnMnTe QD. The emission at low temperatures is strongly circularly polarized(sigma+ or sigma- ). As the temperature is raised the polarization drops to zero. This is interpreted as due a breakdown of the e-h-Mn polaron into an electron and a h-Mn polaron that persists up to room temperature. Aharonov-Bohm oscillations in the PL intensity have been observed in this system.

Author: Yongmin Kim
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 354

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Author: Masataka Mogi
Publisher: Springer Nature
ISBN: 9811921377
Category : Computers
Languages : en
Pages : 120

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This book presents experimental studies on emergent transport and magneto-optical properties in three-dimensional topological insulators with two-dimensional Dirac fermions on their surfaces. Designing magnetic heterostructures utilizing a cutting-edge growth technique (molecular beam epitaxy) stabilizes and manifests new quantization phenomena, as confirmed by low-temperature electrical transport and time-domain terahertz magneto-optical measurements. Starting with a review of the theoretical background and recent experimental advances in topological insulators in terms of a novel magneto-electric coupling, the author subsequently explores their magnetic quantum properties and reveals topological phase transitions between quantum anomalous Hall insulator and trivial insulator phases; a new topological phase (the axion insulator); and a half-integer quantum Hall state associated with the quantum parity anomaly. Furthermore, the author shows how these quantum phases can be significantly stabilized via magnetic modulation doping and proximity coupling with a normal ferromagnetic insulator. These findings provide a basis for future technologies such as ultra-low energy consumption electronic devices and fault-tolerant topological quantum computers.

Author: Gottfried Landwehr
Publisher: World Scientific
ISBN: 9814740837
Category :
Languages : en
Pages : 1108

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This volume contains contributions presented at the 12th International Conference on High Magnetic Fields in Semiconductor Physics. In order to give an overview, 37 lecturers not only reviewed the latest results in their field, but also gave a general introduction. The rapid development of semiconductor physics and technology during the last few years has resulted in an extensive application of high magnetic fields in both fundamental and applied research; more than 160 contributed papers were presented as posters.Sixteen years after its discovery, the quantum Hall effect (QHE) is still a subject of high activity. Many new results on the fractional QHE were presented; in addition to 6 invited papers, there were 43 contributions. Another field of high activity is magneto-optics, and 49 posters were presented. Magnetotransport also turned out to be of high interest, and magnetic semiconductors played a prominent role at the conference, too.Without doubt, the availability of superconducting magnets in most laboratories contributed to the growth of semiconductor physics in high magnetic fields. Because not all experiments can be performed in fields up to 10 or 15 teslas, high magnetic field laboratories offering larger fields are indispensable. There were reports from four laboratories on present work going on at these installations.

Author: D.J. Lockwood
Publisher: Springer Science & Business Media
ISBN: 9401119120
Category : Science
Languages : en
Pages : 443

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Remarkable advances in semiconductor growth and processing technologies continue to have a profound impact on condensed-matter physics and to stimulate the invention of novel optoelectronic effects. Intensive research on the behaviors of free carriers has been carried out in the two-dimensional systems of semiconductor heterostructures and in the one and zero-dimensional systems of nanostructures created by the state-of-the-art fabrication methods. These studies have uncovered unexpected quantum mechanical correlations that arise because of the combined effects of strong electron-electron interactions and wave function confinement associated with reduced dimensionality. The investigations of these phenomena are currently at the frontiers of condensed-matter physics. They include areas like the fractional quantum Hall effect, the dynamics of electrons on an ultra short (femtosecond) time scale, electron behavior in quantum wires and dots, and studies of electron tunneling phenomena in ultra small semiconductor structures. Optical techniques have made important contributions to these fields in recent years, but there has been no coherent review of this work until now. The book provides an overview of these recent developments that will be of interest to semiconductor materials scientists in university, government and industrial laboratories.