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Author: Denny D. Tang Publisher: John Wiley & Sons ISBN: 1119562236 Category : Science Languages : en Pages : 352
Book Description
STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.
Author: Denny D. Tang Publisher: John Wiley & Sons ISBN: 1119562236 Category : Science Languages : en Pages : 352
Book Description
STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.
Author: Denny D. Tang Publisher: Cambridge University Press ISBN: 9780521449649 Category : Technology & Engineering Languages : en Pages : 208
Book Description
If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.
Author: Bernard Dieny Publisher: John Wiley & Sons ISBN: 1119079357 Category : Science Languages : en Pages : 264
Book Description
Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.
Author: Yoshio Nishi Publisher: Elsevier ISBN: 0857098098 Category : Computers Languages : en Pages : 456
Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Author: Joshua Foer Publisher: Penguin ISBN: 1101475978 Category : Science Languages : en Pages : 320
Book Description
“Highly entertaining.” —Adam Gopnik, The New Yorker “Funny, curious, erudite, and full of useful details about ancient techniques of training memory.” —The Boston Globe The blockbuster phenomenon that charts an amazing journey of the mind while revolutionizing our concept of memory An instant bestseller that is poised to become a classic, Moonwalking with Einstein recounts Joshua Foer's yearlong quest to improve his memory under the tutelage of top "mental athletes." He draws on cutting-edge research, a surprising cultural history of remembering, and venerable tricks of the mentalist's trade to transform our understanding of human memory. From the United States Memory Championship to deep within the author's own mind, this is an electrifying work of journalism that reminds us that, in every way that matters, we are the sum of our memories.
Author: Walter E. Proebster Publisher: Vieweg+teubner Verlag ISBN: Category : Computers Languages : en Pages : 440
Book Description
Digital memory and storage technologies occupy a dominant position in electronic data processing: They are intimately interwoven with almost all aspects of a data processing system, be it the control processing unit, the peripheral devices or the program and data storage. In this context, memory and storage is one of the most essential design parameters that determine performance and cost efficiency of the entire system to a very high degree. Beyond the field of electronic data processing, digital memory and storage fmd ever widening application in the areas of control and measurement techniques, in digital communication and switching, and lately, even in the area of the consumer electronic market. This explains, why since the beginning of the computer age, digital memory and storage are finding ever increasing attention in research and development. Of the many different memory and storage technologies investigated for application, only very few survived in the tough economic cost/performance struggle. This process still continues: Semiconductor memories have almost completely replaced the ferrite core memories. For the "gap" in cost and performance between memory and storage - which is of growing importance for systems throughput, particularly for query and database systems - very promising proposals, such as charge coupled devices and magnetic bubble memories appear. For very high data volumes, devices with automatic storage media transport have been conceived and developed. For extremely fast memories, research on low temperature Josephson devices has made Significant advances.
Author: Denny D. Tang Publisher: Cambridge University Press ISBN: 1139484494 Category : Technology & Engineering Languages : en Pages : 207
Book Description
If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.
Author: Wen Siang Lew Publisher: Springer Nature ISBN: 9811569126 Category : Science Languages : en Pages : 439
Book Description
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author: Yuan Xie Publisher: Springer Science & Business Media ISBN: 144199551X Category : Technology & Engineering Languages : en Pages : 321
Book Description
This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.
Author: Nelson Dellis Publisher: Abrams ISBN: 1683357760 Category : Juvenile Nonfiction Languages : en Pages : 259
Book Description
A kid’s guide to amazing feats of memorization with “a variety of engaging memory exercises [and] methods for all different types of learners.” —Kirkus Reviews Nelson Dellis, the four-time USA Memory Champion, reveals the secrets to his phenomenal ability to remember almost anything. From presidents to state capitals, from mathematical theorems to the periodic table, kids have so much to remember for school! This incredibly helpful book is structured as an entertaining and fantastical narrative in which the author guides the reader as they attempt to climb Mount Foreverest. Up there, the goal is to defeat the Memory Thief, a villain plotting to steal everyone’s memories. On the journey, while encountering pirates, forest dwarves, and mummies, you’ll also find tools and tricks to remember the US presidents in order, foreign word meanings, countries and capitals, the periodic table, long numbers, and multiplication tables. These easily understandable exercises can help build skills to remember any kinds of words, lists, numbers, or concepts. Whether you’re trying to become a better student or just want to amaze friends and family, Memory Superpowers! is one unforgettable book. “[Steph] Stilwell’s bright illustrations accompany this book that’s full of useful tips that will help students enjoy learning to study better.” ?Booklist
Author: Denny D. Tang
Author: Denny D. Tang
Author: Denny D. Tang
Author: Bernard Dieny
Author: Yoshio Nishi
Author: Joshua Foer
Author: Walter E. Proebster
Author: Denny D. Tang
Author: Wen Siang Lew
Author: Yuan Xie
Author: Nelson Dellis