Luminescence Properties of Rare Earth Doped III-V and II-VI Semiconductors PDF Download

Author: Amer K. Alshawa
Publisher:
ISBN:
Category : Chemical kinetics
Languages : en
Pages : 314

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Author: S. Coffa
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 392

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Book Description
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.

Author: Salvatore Coffa
Publisher: Materials Research Society
ISBN: 9781558993259
Category : Technology & Engineering
Languages : en
Pages : 366

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Book Description
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.

Author: Gernot S. Pomrenke
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author: Electrochemical Society. Electronics Division
Publisher: The Electrochemical Society
ISBN: 9781566773690
Category : Technology & Engineering
Languages : en
Pages : 380

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Author: Kevin Peter O'Donnell
Publisher: Springer Science & Business Media
ISBN: 9048128773
Category : Science
Languages : en
Pages : 366

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This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.

Author: Volkmar Dierolf
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472

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Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics

Author: Stephen J. Pearton
Publisher: CRC Press
ISBN: 9789056996864
Category : Science
Languages : en
Pages : 724

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The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics, and Er-doping. This unique follow-up features contributions from leading experts that cover the full spectrum of growth.

Author:
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 592

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Author: Shigeo Shionoya
Publisher: Springer Science & Business Media
ISBN: 3642934307
Category : Science
Languages : en
Pages : 408

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The Fourth International Workshop on Electroluminescence (EL-88) was held at the Hotel Holiday, Tottori, Japan, October 11-14, 1988. This workshop was sponsored by the 125 Research Committee on Mutual Conversion between Light and Electricity, Japan Society for the Promotion of Science, in cooperation with SID (Society for Infonnation Display) Japan Chapter, Tottori Prefecture, the Tot tori Industrial Technology Association, and the Foundation for Advancement of International Science (FAIS). The workshop EL-88 was a continuation of the series of international work shops held successively at Liege (Belgium) in 1980, Bad Stuer (DDR) in 1983, and at Wann Springs (Oregon, USA) in 1986. It brought together scientists and engi neers from universities and industry who shared a common interest in discussing electroluminescence and related topics. The number of participants reached 253; 49 from abroad (10 countries) and 204 from Japan. This is almost four times as many as in the previous workshop in 1986, reflecting the recent rapid development and progress of electroluminescence research.