Author: Kurt Alois Wick
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 138
Book Description
Low Temperature Silicon Sputter Epitaxy
Author: Kurt Alois Wick
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 138
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 138
Book Description
Low-temperature Silicon Sputter-deposition Epitaxy for 3-D Integrated Circuits
Low Temperature Silicon Epitaxy by Remote, Plasma-enhanced Chemical Vapor Deposition
Author: Scott Dwight Habermehl
Publisher:
ISBN:
Category :
Languages : en
Pages : 306
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 306
Book Description
Low Temperature Epitaxial Growth of Semiconductors
Author: Takashi Hariu
Publisher: World Scientific
ISBN: 9789971508395
Category : Technology & Engineering
Languages : en
Pages : 356
Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Publisher: World Scientific
ISBN: 9789971508395
Category : Technology & Engineering
Languages : en
Pages : 356
Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Low Temperature Silicon Epitaxy by Low Pressure Chemical Vapor Deposition with and Without Plasma Enhancement
Low Temperature Silicon Epitaxy by Low Pressure Chemical Vapor Deposition with and Without Plasma Enchancement
Author: Wayne Robert Burger
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 119
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 119
Book Description
Low Temperature Silicon Epitaxy Using Low Pressure Chemical Vapor Deposition with and Without Plasma Enhancement
Low Temperature Selective Silicon Epitaxy by Ultra-high Vacuum Rapid Thermal Chemical Vapor Deposition Using Disilane, Hydrogen and Chlorine
Author: Katherine Elizabeth Violette
Publisher:
ISBN:
Category :
Languages : en
Pages : 502
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 502
Book Description
Low Temperature Silicon Epitaxy Using Low Pressure Chemical Vapor Deposition with and Without Plasma Enhancement
Author: Thomas Joseph Donahue
Publisher:
ISBN:
Category : Silicon crystals
Languages : en
Pages : 9
Book Description
Publisher:
ISBN:
Category : Silicon crystals
Languages : en
Pages : 9
Book Description
Silicon-Molecular Beam Epitaxy
Author: E. Kasper
Publisher: CRC Press
ISBN: 1351093517
Category : Technology & Engineering
Languages : en
Pages : 302
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Publisher: CRC Press
ISBN: 1351093517
Category : Technology & Engineering
Languages : en
Pages : 302
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.