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Author: Ren Xu Publisher: ISBN: Category : Languages : en Pages : 10
Book Description
LiNbO3 thin films on various substrates were fabricated from sol-gel process. Epitaxial growth of LiNbO3 On sapphire(012), single crystal LiTaO3(l 10) and single crystal LiNbO3(001) were found. Water addition in the solution prior to film deposition was found to be unnecessary. Crystallization temperature was between 350 deg C and 450 deg C in air. Amorphous gel films stabilized at temperatures ranging from 25 deg C to 250 deg C at different Li/Nb ratios were also found to show P-E hysteresis loops. Pr and Ec values were in the same order of magnitude as those of single crystal LiNbO3. Pyroelectric coefficients were measured. Auger and IR spectra were used to study the gel film composition and structure. X-ray and electron diffractions were used to confirm the amorphousness of these gel films. Amorphous ferroelectricity was used to account for these observations.
Author: Ren Xu Publisher: ISBN: Category : Languages : en Pages : 10
Book Description
LiNbO3 thin films on various substrates were fabricated from sol-gel process. Epitaxial growth of LiNbO3 On sapphire(012), single crystal LiTaO3(l 10) and single crystal LiNbO3(001) were found. Water addition in the solution prior to film deposition was found to be unnecessary. Crystallization temperature was between 350 deg C and 450 deg C in air. Amorphous gel films stabilized at temperatures ranging from 25 deg C to 250 deg C at different Li/Nb ratios were also found to show P-E hysteresis loops. Pr and Ec values were in the same order of magnitude as those of single crystal LiNbO3. Pyroelectric coefficients were measured. Auger and IR spectra were used to study the gel film composition and structure. X-ray and electron diffractions were used to confirm the amorphousness of these gel films. Amorphous ferroelectricity was used to account for these observations.
Author: Carlos Paz de Araujo Publisher: Taylor & Francis US ISBN: 9782884491976 Category : Science Languages : en Pages : 598
Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Author: R. Ramesh Publisher: Springer Science & Business Media ISBN: 146156185X Category : Technology & Engineering Languages : en Pages : 250
Book Description
The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.
Author: Husein Irzaman Publisher: BoD – Books on Demand ISBN: 1789840139 Category : Science Languages : en Pages : 166
Book Description
Ferroelectricity is a symptom of inevitable electrical polarization changes in materials without external electric field interference. Ferroelectricity is a phenomenon exhibited by crystals with a spontaneous polarization and hysteresis effects associated with dielectric changes when an electric field is given. Our fascination with ferroelectricity is in recognition of a beautiful article by Itskovsky, in which he explains the kinetics of a ferroelectric phase transition in a thin ferroelectric layer (film). We have been researching ferroelectric materials since 2001. There are several materials known for their ferroelectric properties. Barium titanate and barium strontium titanate are the most well known. Several others include tantalum oxide, lead zirconium titanate, gallium nitride, lithium tantalate, aluminium, copper oxide, and lithium niobate. There is still a blue ocean of ferroelectric applications yet to be expounded. It is and hopefully always will be a bright future.
Author: P. Joshi Publisher: The Electrochemical Society ISBN: 1566777259 Category : Science Languages : en Pages : 63
Book Description
The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Novel Plasma Techniques for Low Temperature Processing of Thin Films for Flexible Electronics¿, held during the 215th meeting of The Electrochemical Society, in San Francisco, California from May 24 to 29, 2009.
Author: Mickaël Lallart Publisher: BoD – Books on Demand ISBN: 9533073322 Category : Science Languages : en Pages : 534
Book Description
Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on ways to obtain high-quality materials exhibiting large ferroelectric activity. The book covers the aspect of material synthesis and growth, doping and composites, lead-free devices, and thin film synthesis. The aim of this book is to provide an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric materials, allowing a deep understanding of the material aspects of ferroelectricity.
Author: Miguel Alguero Publisher: John Wiley & Sons ISBN: 1118935675 Category : Technology & Engineering Languages : en Pages : 984
Book Description
This two volume set reviews the key issues in processing and characterization of nanoscale ferroelectrics and multiferroics, and provides a comprehensive description of their properties, with an emphasis in differentiating size effects of extrinsic ones like boundary or interface effects. Recently described nanoscale novel phenomena are also addressed. Organized into three parts it addresses key issues in processing (nanostructuring), characterization (of the nanostructured materials) and nanoscale effects. Taking full advantage of the synergies between nanoscale ferroelectrics and multiferroics, the text covers materials nanostructured at all levels, from ceramic technologies like ferroelectric nanopowders, bulk nanostructured ceramics and thick films, and magnetoelectric nanocomposites, to thin films, either polycrystalline layer heterostructures or epitaxial systems, and to nanoscale free standing objects with specific geometries, such as nanowires and tubes at different levels of development. This set is developed from the high level European scientific knowledge platform built within the COST (European Cooperation in Science and Technology) Action on Single and multiphase ferroics and multiferroics with restricted geometries (SIMUFER, ref. MP0904). Chapter contributors have been carefully selected, and have all made major contributions to knowledge of the respective topics, and overall, they are among most respected scientists in the field.
Author: Seungbum Hong Publisher: Springer Science & Business Media ISBN: 1441990445 Category : Technology & Engineering Languages : en Pages : 294
Book Description
This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A.
Author: Ren Xu
Author: Ren Xu
Author: Carlos Paz de Araujo
Author: R. Ramesh
Author: Husein Irzaman
Author: 
Author: P. Joshi
Author: Mickaël Lallart
Author: Miguel Alguero
Author: Edward R. Myers
Author: Seungbum Hong