Author: Ting-Chen Hsu
Publisher:
ISBN:
Category : Silicon
Languages : en
Pages : 258
Book Description
Low temperature in situ clean and Si and Si[subscript 1-x] and Ge[subscript x] epitaxy by remote plasma-enhanced chemical vapor deposition
Author: Ting-Chen Hsu
Publisher:
ISBN:
Category : Silicon
Languages : en
Pages : 258
Book Description
Publisher:
ISBN:
Category : Silicon
Languages : en
Pages : 258
Book Description
Characterization and reduction of defects in epitaxial Si and Si[subscript 1-x] Ge[subscript x]/Si films grown by remote plasma-enhanced chemical vapor deposition
Author: David Stephen Kinosky
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 244
Book Description
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 244
Book Description
Low Temperature Silicon Epitaxy by Remote, Plasma-enhanced Chemical Vapor Deposition
Author: Scott Dwight Habermehl
Publisher:
ISBN:
Category :
Languages : en
Pages : 306
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 306
Book Description
Crystallographic and electrical characterization of epitaxial GE[subscript x]Si[subscript 1-x]/Si and in-situ doped films grown by remote plasma chemical vapor deposition
Author: Rong-Zhen Qian
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 396
Book Description
Publisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 396
Book Description
Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 19
Book Description
Atomic layer Epitaxy (ALE) of Si has been demonstrated by using remote He plasma low energy ion bombardment to desorb H from a H-passivated Si(100) surface at low temperatures and subsequently chemisorbing Si2H6 on the surface in a self-limiting fashion. Si substrates were prepared using an RCA clean followed by a dilute HF dip to provide a clean, dihydride-terminated (1 x 1) surface, and were loaded into a Remote Plasma Chemical Vapor Deposition (RPCVD) system in which the substrate is downstream from an r-f noble gas(He or Ar) glow discharge in order to minimize plasma damage. An in situ remote H plasma clean at 250 deg C for 45 min. was used to remove surface 0 and C and provide an alternating monohydride and dihydride termination, as evidenced by a (3 x 1) RHEED pattern. It was found necessary to desorb the H from the Si surface to create adsorption sites for Si bearing species such as Si2H6. Remote He plasma bombardment for 1-3 min. was investigated over a range of temperatures (250 deg C-410 deg C), pressures (50-400 mTorr) and r-f powers (6-30 W) in order to desorb the H and convert the (3 x 1) RHEED pattern to a (2 x 1) pattern which is characteristic of either a monohydride termination or a bare Si surface.
Publisher:
ISBN:
Category :
Languages : en
Pages : 19
Book Description
Atomic layer Epitaxy (ALE) of Si has been demonstrated by using remote He plasma low energy ion bombardment to desorb H from a H-passivated Si(100) surface at low temperatures and subsequently chemisorbing Si2H6 on the surface in a self-limiting fashion. Si substrates were prepared using an RCA clean followed by a dilute HF dip to provide a clean, dihydride-terminated (1 x 1) surface, and were loaded into a Remote Plasma Chemical Vapor Deposition (RPCVD) system in which the substrate is downstream from an r-f noble gas(He or Ar) glow discharge in order to minimize plasma damage. An in situ remote H plasma clean at 250 deg C for 45 min. was used to remove surface 0 and C and provide an alternating monohydride and dihydride termination, as evidenced by a (3 x 1) RHEED pattern. It was found necessary to desorb the H from the Si surface to create adsorption sites for Si bearing species such as Si2H6. Remote He plasma bombardment for 1-3 min. was investigated over a range of temperatures (250 deg C-410 deg C), pressures (50-400 mTorr) and r-f powers (6-30 W) in order to desorb the H and convert the (3 x 1) RHEED pattern to a (2 x 1) pattern which is characteristic of either a monohydride termination or a bare Si surface.
Low-temperature Silicon Epitaxy Deposited by Plasma Enhanced Chemical Vapor Deposition
Author: T. J. Donahue
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 22
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 22
Book Description
In Situ TEM Studies of the Growth of Strained Si Sub 1 Minus X Ge Sub X by Solid Phase Epitaxy
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 6
Book Description
In this paper we report on the epitaxial growth of strained thin films Si{sub 1-x}Ge(subscript x) on Si by solid phase epitaxy. For these solid phase epitaxy experiments, a 180-nm-thick strained-layer of Si{sub 1-x}Ge(subscript x) with x{sub Ge} = 11.6 at. % was epitaxially grown on {l angle}001{r angle} Si using chemical vapor deposition. The near surface region of the substrate, including the entire Si{sub 1-x}Ge(subscript x) film, was then amorphized to a depth of 380 nm using a two step process of 100 keV, followed by 200 keV, 29Si ion implantation. The epitaxial regrowth of the alloy was studied with in situ TEM heating techniques which enabled an evaluation of the activation energy for strained solid phase epitaxial regrowth. We report that the activation energy Si{sub 1-x}Ge(subscript x) (x = 11.6 at. %) strained-layer regrowth is 3.2 eV while that for unstrained regrowth of pure Si is 2.68 eV and that regrowth in the alloy is slower than in pure Si over the temperature range 490 to 600°C. 8 refs., 3 figs., 1 tab.
Publisher:
ISBN:
Category :
Languages : en
Pages : 6
Book Description
In this paper we report on the epitaxial growth of strained thin films Si{sub 1-x}Ge(subscript x) on Si by solid phase epitaxy. For these solid phase epitaxy experiments, a 180-nm-thick strained-layer of Si{sub 1-x}Ge(subscript x) with x{sub Ge} = 11.6 at. % was epitaxially grown on {l angle}001{r angle} Si using chemical vapor deposition. The near surface region of the substrate, including the entire Si{sub 1-x}Ge(subscript x) film, was then amorphized to a depth of 380 nm using a two step process of 100 keV, followed by 200 keV, 29Si ion implantation. The epitaxial regrowth of the alloy was studied with in situ TEM heating techniques which enabled an evaluation of the activation energy for strained solid phase epitaxial regrowth. We report that the activation energy Si{sub 1-x}Ge(subscript x) (x = 11.6 at. %) strained-layer regrowth is 3.2 eV while that for unstrained regrowth of pure Si is 2.68 eV and that regrowth in the alloy is slower than in pure Si over the temperature range 490 to 600°C. 8 refs., 3 figs., 1 tab.
Ge[subscript x]Si[subscript 1-x] epitaxial layers grown by rapid thermal processing chemical vapor deposition
Author: Kim Hsi-I Jung
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 118
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 118
Book Description
Low Temperature Epitaxial Deposition of Silicon by Plasma Enhanced CVD (Chemical Vapor Deposition).
Author: L. R. Reif
Publisher:
ISBN:
Category :
Languages : en
Pages : 12
Book Description
A reactor system has been developed to deposit specular epitaxial silicon films at temperatures as low as 620 C using a low pressure chemical vapor deposition process both with and without plasma enhancement. This represents the lowest silicon epitaxial deposition temperature ever reported for a thermally driven chemical vapor deposition process. Experiments performed at 775 C indicate that the predeposition in-situ cleaning of the substrate surface is the critical step in determining whether epitaxial deposition will occur. Surface cleaning in these experiments was done by sputtering in an argon plasma ambient at the deposition temperature while applying a dc bias to the susceptor. This is the lowest pre-epitaxial cleaning temperature ever reported for a thermally driven chemical vapor deposition. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 12
Book Description
A reactor system has been developed to deposit specular epitaxial silicon films at temperatures as low as 620 C using a low pressure chemical vapor deposition process both with and without plasma enhancement. This represents the lowest silicon epitaxial deposition temperature ever reported for a thermally driven chemical vapor deposition process. Experiments performed at 775 C indicate that the predeposition in-situ cleaning of the substrate surface is the critical step in determining whether epitaxial deposition will occur. Surface cleaning in these experiments was done by sputtering in an argon plasma ambient at the deposition temperature while applying a dc bias to the susceptor. This is the lowest pre-epitaxial cleaning temperature ever reported for a thermally driven chemical vapor deposition. (Author).