Author: S. P. OH̀aganPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Low Temperature Growth of Gallium Arsenide by Molecular Beam Epitaxy
Author: S. P. OH̀aganMolecular beam epitaxy of low temperature gallium arsenide
Author: Anand SrinivasanPublisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 142
Book Description
Gallium Arsenide Antimonide Grown by Low-temperature Molecular Beam Epitaxy
Author: Curtis Friedrich SellPublisher:
ISBN:
Category :
Languages : en
Pages : 92
Book Description
This research studies electrical properties of low-temperature grown gallium arsenide antimonide (LT GaAs[subscript x]Sb[subscript (, -x)]) films as a function of composition, and examines low-temperature aluminum arsenide and gallium arsenide for comparison. Literature on LT GaAs, bulk GaAsSb, and MBE grown GaAsSb, and existing models for choosing MBE growth parameters are presented. After MBE growth of samples at 300°C, and measurement of their composition using XRD, an improved growth model is constructed. Sheet resistance, mobility, doping type and carrier concentration of the samples grown were determined by Hall and Van der Pauw measurements. The LT GaAsSb sheet resistance decreases with increasing Sb content.
Electrical Measurements on Electron Irradiated Low-temperature Grown Molecular Beam Epitaxial Gallium Arsenide
Author: Susan M. LindsayPublisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 130
Book Description
The Structural Electrical and Optical Characterisation of Indium Gallium Arsenide Grown by Molecular Beam Epitaxy at Low Temperature
Author: S. M. TownsendMolecular Beam Epitaxy
Author: John OrtonPublisher: OUP Oxford
ISBN: 0191061166
Category : Science
Languages : en
Pages : 529
Book Description
The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Gallium Arsenide and Related Compounds
Author: Manganese Incorporation in Gallium Arsenide Grown by Molecular Beam Epitaxy
Author: Susan C. PalmateerPublisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 286
Book Description
Preparation of Gallium Arsenide for Molecular Beam Epitaxy (MBE) Growth
Author: S. K. E. RagoonadenGallium Arsenide Technology
Author: David K. FerryPublisher: Sams Technical Publishing
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 504
Book Description