Author: Cheng Chiang PhuaPublisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 320
Book Description
Low-temperature Grown Semiconducting GaAs Epilayer on Si by Molecular Beam Epitaxy and Its Application to Laser Diodes
Author: Cheng Chiang PhuaPublisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 320
Book Description
Low Temperature Epitaxial Growth of Semiconductors
Author: Takashi HariuPublisher: World Scientific
ISBN: 9789971508395
Category : Technology & Engineering
Languages : en
Pages : 356
Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) and Wide Bandgap Semiconductor Materials and Devices 7
Author: F. RenPublisher: The Electrochemical Society
ISBN: 1566775051
Category : Compound semiconductors
Languages : en
Pages : 491
Book Description
This volume contains papers from two symposia: State of the Art Program on Compound Semiconductors 45 and Wide Bandgap Semiconductor Materials and Devices VII.
Silicon Molecular Beam Epitaxy
Author: E. KasperPublisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Investigation of GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperature
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 79
Book Description
Over the three-year course of this program, the low-temperature-grown (LTG) GaAs and AlGaAs have been incorporated as the gate insulator or surface passivation in a variety of field-effect-transistors (FETs). The LTG GaAs used as the surface passivation layer in a metal-semiconductor FET (MESFET) with a novel overlapping gate structure increased the breakdown voltage by two folds compared to a regular MESFET. The LTG GaAs passivation also greatly improved the surface quality of the device, resulting in a reduced low-frequency noise and minimal frequency dispersions of the transconductance and the output resistance. The mechanisms for the improved breakdown voltage have been studied by computer simulation. Self-aligned GaAs metal- insulator-semiconductor FETs (MISFETs) having an LTG GaAs gate insulator--have been developed. The performance of the MISFET was improved significantly by the ion-implanted high-doping-concentration source and drain regions. A variety of the LTG GaAs and LTG AlGaAs with different Al mole fractions, that can used as the gate insulator, have been grown to study the effects of the growth temperature and the thickness on the properties of the MISFETs. jg.
Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy
Author: John Condon BeanPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 682
Book Description
Japanese Journal of Applied Physics
Author: JJAP
Author: The Residual Strain in GaAs Epitaxial Layers Grown in Si Substrates by Molecular Beam Epitaxy
Author: Hyunchul SohnMolecular Beam Epitaxy
Author: Mohamed HeniniPublisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community