Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
Book Description
This document reports on the progress towards the growth of rare earth dope Si by low temperature plasma enhanced chemical vapor deposition (PECVD). The goal of this investigation is to develop a commercially compatible technique to deposit thick, high concentration, precipitation free, rare earth doped Si films. The low temperature growth technique used is plasma enhanced chemical vapor deposition with an electron cyclotron resonance(ECR) source. Low temperature processing is needed to avoid the formation of ErSi2 precipitates which are known to be optically inactive. Epitaxial Si films doped with varying concentrations of Er have been grown in this investigation at low substrate temperatures (
Low Temperature Epitaxial Growth of Rare Earth Doped Silicon and Silicon Germanium Alloys
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
Book Description
This document reports on the progress towards the growth of rare earth dope Si by low temperature plasma enhanced chemical vapor deposition (PECVD). The goal of this investigation is to develop a commercially compatible technique to deposit thick, high concentration, precipitation free, rare earth doped Si films. The low temperature growth technique used is plasma enhanced chemical vapor deposition with an electron cyclotron resonance(ECR) source. Low temperature processing is needed to avoid the formation of ErSi2 precipitates which are known to be optically inactive. Epitaxial Si films doped with varying concentrations of Er have been grown in this investigation at low substrate temperatures (
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
Book Description
This document reports on the progress towards the growth of rare earth dope Si by low temperature plasma enhanced chemical vapor deposition (PECVD). The goal of this investigation is to develop a commercially compatible technique to deposit thick, high concentration, precipitation free, rare earth doped Si films. The low temperature growth technique used is plasma enhanced chemical vapor deposition with an electron cyclotron resonance(ECR) source. Low temperature processing is needed to avoid the formation of ErSi2 precipitates which are known to be optically inactive. Epitaxial Si films doped with varying concentrations of Er have been grown in this investigation at low substrate temperatures (
Low Temperature Epitaxial Growth of Rare Earth Doped Si
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 22
Book Description
Epitaxial Si films doped with high concentrations (10(exp 19)/cu cm) of the rare earth element Er have been deposited. The deposition technique used was low temperature plasma enhanced chemical vapor deposition with an electron cyclotron resonance source. The deposition temperatures were below 500 deg C to avoid formation of erbium silicide which is optically inactive. The growth process for undoped samples was developed to the point that good quality epitaxial material could be obtained on demand. Some work was done investigating the concept of limited epitaxial thickness. Four different metal organic Er precursors were tried and the greatest success was found determine (bis trimethyl silyl amido) Er (III). A designed experiment was performed to the most important process conditions required to maximize the photoluminescence emission. Reasonably intense photoluminescence emission has been obtained, comparable to the level obtained by other groups, yet no absolute intensity calibration is currently available. Chemical analysis of the films was performed with both SIMS and RBS. The films do contain some carbon contamination, but the current thinking that this acts to reduce the lattice constant in the vicinity of the optical center and reduces the creation of crystalline defects.
Publisher:
ISBN:
Category :
Languages : en
Pages : 22
Book Description
Epitaxial Si films doped with high concentrations (10(exp 19)/cu cm) of the rare earth element Er have been deposited. The deposition technique used was low temperature plasma enhanced chemical vapor deposition with an electron cyclotron resonance source. The deposition temperatures were below 500 deg C to avoid formation of erbium silicide which is optically inactive. The growth process for undoped samples was developed to the point that good quality epitaxial material could be obtained on demand. Some work was done investigating the concept of limited epitaxial thickness. Four different metal organic Er precursors were tried and the greatest success was found determine (bis trimethyl silyl amido) Er (III). A designed experiment was performed to the most important process conditions required to maximize the photoluminescence emission. Reasonably intense photoluminescence emission has been obtained, comparable to the level obtained by other groups, yet no absolute intensity calibration is currently available. Chemical analysis of the films was performed with both SIMS and RBS. The films do contain some carbon contamination, but the current thinking that this acts to reduce the lattice constant in the vicinity of the optical center and reduces the creation of crystalline defects.
Silicon, Germanium, and Their Alloys
Author: Gudrun Kissinger
Publisher: CRC Press
ISBN: 1466586648
Category : Science
Languages : en
Pages : 436
Book Description
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Publisher: CRC Press
ISBN: 1466586648
Category : Science
Languages : en
Pages : 436
Book Description
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Low Temperature Epitaxial Growth of Semiconductors
Author: Takashi Hariu
Publisher: World Scientific
ISBN: 9789971508395
Category : Technology & Engineering
Languages : en
Pages : 356
Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Publisher: World Scientific
ISBN: 9789971508395
Category : Technology & Engineering
Languages : en
Pages : 356
Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Low Temperature Epitaxial Growth of Ge-C and Ge-Si-C Alloy Thin Films
Scientific and Technical Aerospace Reports
Epitaxial Silicon Technology
Author: B Baliga
Publisher: Elsevier
ISBN: 0323155456
Category : Technology & Engineering
Languages : en
Pages : 337
Book Description
Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Publisher: Elsevier
ISBN: 0323155456
Category : Technology & Engineering
Languages : en
Pages : 337
Book Description
Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Low Temperature Epitaxial Growth of Erbium Doped Silicon Films by Electron Cyclotron Resonance (ECR) Plasma Enhanced Chemical Vapor Deposition Using a Sublimed Metalorganic
Author: Jim L. Rogers
Publisher:
ISBN:
Category : Compound semiconductors
Languages : en
Pages : 198
Book Description
Publisher:
ISBN:
Category : Compound semiconductors
Languages : en
Pages : 198
Book Description
Publications of the National Institute of Standards and Technology ... Catalog
Author: National Institute of Standards and Technology (U.S.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 392
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 392
Book Description
The Low Temperature Solution Growth of Thin-film Silicon and Silicon Germanium Alloys and Their Use in Photovoltaic Applications
Author: Stephen A. Healy
Publisher:
ISBN:
Category : Germanium
Languages : en
Pages : 210
Book Description
Publisher:
ISBN:
Category : Germanium
Languages : en
Pages : 210
Book Description