Author: Nabil Shovon AshrafPublisher: Morgan & Claypool Publishers
ISBN: 1681733862
Category : Technology & Engineering
Languages : en
Pages : 91
Book Description
Low substrate/lattice temperature (
Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET
Author: Nabil Shovon AshrafPublisher: Morgan & Claypool Publishers
ISBN: 1681733862
Category : Technology & Engineering
Languages : en
Pages : 91
Book Description
Low substrate/lattice temperature (
Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET
Author: Nabil Shovon AshrafPublisher: Springer Nature
ISBN: 3031020340
Category : Technology & Engineering
Languages : en
Pages : 77
Book Description
Low substrate/lattice temperature (
New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation
Author: Nabil Shovon AshrafPublisher: Springer Nature
ISBN: 3031020278
Category : Technology & Engineering
Languages : en
Pages : 72
Book Description
In order to sustain Moore's Law-based device scaling, principal attention has focused on toward device architectural innovations for improved device performance as per ITRS projections for technology nodes up to 10 nm. Efficient integration of lower substrate temperatures (
Advanced Concepts and Architectures for Plasma-Enabled Material Processing
Author: Oleg O. BaranovPublisher: Springer Nature
ISBN: 3031020359
Category : Technology & Engineering
Languages : en
Pages : 82
Book Description
Plasma-based techniques are widely and successfully used across the field of materials processing, advanced nanosynthesis, and nanofabrication. The diversity of currently available processing architectures based on or enhanced by the use of plasmas is vast, and one can easily get lost in the opportunities presented by each of these configurations. This mini-book provides a concise outline of the most important concepts and architectures in plasma-assisted processing of materials, helping the reader navigate through the fundamentals of plasma system selection and optimization. Architectures discussed in this book range from the relatively simple, user-friendly types of plasmas produced using direct current, radio-frequency, microwave, and arc systems, to more sophisticated advanced systems based on incorporating and external substrate architectures, and complex control mechanisms of configured magnetic fields and distributed plasma sources.
Low-temperature Substrate Current Characterization of N-channel MOSFET's
Author: David Gilbert Y. W. LauPublisher:
ISBN:
Category :
Languages : en
Pages : 140
Book Description
Optimal Metal Oxide Semiconductor Field-effect Transistors Design for Low Temperature Operation
Author: Keith Matthew JacksonPublisher:
ISBN:
Category :
Languages : en
Pages : 142
Book Description
Electronic Materials Handbook
Author: Publisher: ASM International
ISBN: 9780871702852
Category : Technology & Engineering
Languages : en
Pages : 1234
Book Description
Volume 1: Packaging is an authoritative reference source of practical information for the design or process engineer who must make informed day-to-day decisions about the materials and processes of microelectronic packaging. Its 117 articles offer the collective knowledge, wisdom, and judgement of 407 microelectronics packaging experts-authors, co-authors, and reviewers-representing 192 companies, universities, laboratories, and other organizations. This is the inaugural volume of ASMAs all-new ElectronicMaterials Handbook series, designed to be the Metals Handbook of electronics technology. In over 65 years of publishing the Metals Handbook, ASM has developed a unique editorial method of compiling large technical reference books. ASMAs access to leading materials technology experts enables to organize these books on an industry consensus basis. Behind every article. Is an author who is a top expert in its specific subject area. This multi-author approach ensures the best, most timely information throughout. Individually selected panels of 5 and 6 peers review each article for technical accuracy, generic point of view, and completeness.Volumes in the Electronic Materials Handbook series are multidisciplinary, to reflect industry practice applied in integrating multiple technology disciplines necessary to any program in advanced electronics. Volume 1: Packaging focusing on the middle level of the electronics technology size spectrum, offers the greatest practical value to the largest and broadest group of users. Future volumes in the series will address topics on larger (integrated electronic assemblies) and smaller (semiconductor materials and devices) size levels.
Atomic Layer Deposition for Semiconductors
Author: Cheol Seong HwangPublisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266
Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Compact Modeling
Author: Gennady GildenblatPublisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531
Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Power GaN Devices
Author: Matteo MeneghiniPublisher: Springer
ISBN: 3319431994
Category : Technology & Engineering
Languages : en
Pages : 383
Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.