Low Pressure Metal-organic Vapor Phase Epitaxy (MOVPE) of ZnCdS/GaAs PDF Download

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Low Pressure Metal-organic Vapor Phase Epitaxy (MOVPE) of ZnCdS/GaAs

Low Pressure Metal-organic Vapor Phase Epitaxy (MOVPE) of ZnCdS/GaAs PDF Author: Joe S. Cho
Publisher:
ISBN:
Category :
Languages : en
Pages : 450

Book Description


Low Pressure Metal-organic Vapor Phase Epitaxy (MOVPE) of ZnCdS/GaAs

Low Pressure Metal-organic Vapor Phase Epitaxy (MOVPE) of ZnCdS/GaAs PDF Author: Joe S. Cho
Publisher:
ISBN:
Category :
Languages : en
Pages : 450

Book Description


Metalorganic Vapor Phase Epitaxy (MOVPE)

Metalorganic Vapor Phase Epitaxy (MOVPE) PDF Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 111931304X
Category : Technology & Engineering
Languages : en
Pages : 584

Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Low Pressure Metalorganic Chemical Vapor Deposition (MOCVD) of Ga0.5In0.5P/GaAs

Low Pressure Metalorganic Chemical Vapor Deposition (MOCVD) of Ga0.5In0.5P/GaAs PDF Author: KaiCheng Chou
Publisher:
ISBN:
Category :
Languages : en
Pages : 312

Book Description


Metal Organic Vapour Phase Epitaxy for the Growth of III-V Semiconductor Structures

Metal Organic Vapour Phase Epitaxy for the Growth of III-V Semiconductor Structures PDF Author: Maarten Reinier Leys
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 172

Book Description


Metalorganic Vapor Phase Epitaxy (MOVPE) Growth and Characterization of III-nitride Heterostructures for Application in Electronic Devices

Metalorganic Vapor Phase Epitaxy (MOVPE) Growth and Characterization of III-nitride Heterostructures for Application in Electronic Devices PDF Author: Seth Martin Hubbard
Publisher:
ISBN: 9780542299896
Category :
Languages : en
Pages :

Book Description


The Engineering Index Annual

The Engineering Index Annual PDF Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 2264

Book Description
Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.

Controlled Oxygen Incorporation in III-V Compound Semiconductors Grown by Metal-organic Vapor Phase Epitaxy

Controlled Oxygen Incorporation in III-V Compound Semiconductors Grown by Metal-organic Vapor Phase Epitaxy PDF Author: Jen-Wu Huang
Publisher:
ISBN:
Category :
Languages : en
Pages : 768

Book Description


Metalorganic vapor phase epitaxy

Metalorganic vapor phase epitaxy PDF Author: J. F. - Bonfils
Publisher:
ISBN:
Category :
Languages : en
Pages : 262

Book Description


Physics Briefs

Physics Briefs PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 820

Book Description


Metalorganic Vapor Phase Epitaxy 1990

Metalorganic Vapor Phase Epitaxy 1990 PDF Author: W Richter
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description