Lithium-Drifted Germanium Detectors: Their Fabrication and Use PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Lithium-Drifted Germanium Detectors: Their Fabrication and Use PDF full book. Access full book title Lithium-Drifted Germanium Detectors: Their Fabrication and Use by I. C. Brownridge. Download full books in PDF and EPUB format.
Author: I. C. Brownridge Publisher: Springer Science & Business Media ISBN: 1461345987 Category : Technology & Engineering Languages : en Pages : 222
Book Description
A lithium-drifted germanium detector is a semiconductor de vice which operates at liquid nitrogen temperature, and is used for detection of nuclear radiation, mostly gamma ray. The detection occurs when the y-ray undergoes an interaction in the intrinsic or I region of the semiconductor. The interaction results in the pro duction of charge carriers which are swept out by an electric field. This is accomplished by reverse biasing the detector with approxi mately 100 v/mm of intrinsic material. The total amount of charge swept out is proportional to the energy dissipated in the intrinsic region. This may include the total energy of the photon, but gen erally somewhat less. The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N). The fabrication of this device consists of three major steps: the diffusion of the lithium into the p-type germanium to give an n-type surface region, the drifting process to obtain the intrinsic region as deeply as possible, and the surface preparation. There are numerous procedures for the various steps as well as criteria for material selection and the preparation of the materials.
Author: I. C. Brownridge Publisher: Springer Science & Business Media ISBN: 1461345987 Category : Technology & Engineering Languages : en Pages : 222
Book Description
A lithium-drifted germanium detector is a semiconductor de vice which operates at liquid nitrogen temperature, and is used for detection of nuclear radiation, mostly gamma ray. The detection occurs when the y-ray undergoes an interaction in the intrinsic or I region of the semiconductor. The interaction results in the pro duction of charge carriers which are swept out by an electric field. This is accomplished by reverse biasing the detector with approxi mately 100 v/mm of intrinsic material. The total amount of charge swept out is proportional to the energy dissipated in the intrinsic region. This may include the total energy of the photon, but gen erally somewhat less. The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N). The fabrication of this device consists of three major steps: the diffusion of the lithium into the p-type germanium to give an n-type surface region, the drifting process to obtain the intrinsic region as deeply as possible, and the surface preparation. There are numerous procedures for the various steps as well as criteria for material selection and the preparation of the materials.
Author: Paul G. Pearson Publisher: CRC Press ISBN: 9781560323174 Category : Medical Languages : en Pages : 640
Book Description
The second edition of a bestseller, this book presents the latest innovative research methods that help break new ground by applying patterns, reuse, and design science to research. The book relies on familiar patterns to provide the solid fundamentals of various research philosophies and techniques as touchstones that demonstrate how to innovate research methods. Filled with practical examples of applying patterns to IT research with an emphasis on reusing research activities to save time and money, this book describes design science research in relation to other information systems research paradigms such as positivist and interpretivist research.
Author: I. C. Brownridge
Author: I. C. Brownridge
Author: I C Brownridge
Author: 
Author: Paul G. Pearson
Author: S. S. Kapoor
Author: Sherwin M. Beck
Author: International Atomic Energy Agency
Author: International Atomic Energy Agency
Author: 
Author: F. M. O'Hara