Author: Varley Lawson WrickPublisher:
ISBN:
Category : Phosphides
Languages : en
Pages : 276
Book Description
Liquid Phase Epitaxy of Indium Phosphide
Author: Varley Lawson WrickPublisher:
ISBN:
Category : Phosphides
Languages : en
Pages : 276
Book Description
Development of a Liquid Phase Epitaxial Growth System for Fabrication of Indium Phosphide Based Devices
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 50
Book Description
We have developed a liquid phase epitaxy system for growth of thin- film, III-V materials. We have focused primarily on InP, InGaAs, and InGaAsP growth for fabricating electro-optical devices. We have developed a standard approach for each type of growth and diagnostic techniques for characterization purposes.
Iron Doped High Purity Liquid Phase Epitaxial Indium Phosphide
Author: R. J. MalikPublisher:
ISBN:
Category : Indium phosphide
Languages : en
Pages : 214
Book Description
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials
Author: Peter CapperPublisher: John Wiley & Sons
ISBN: 9780470319499
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Investigation of Solution Epitaxial Growth and High-Field Electronic Properties of Indium Phosphide
Author: Lester F. EastmanPublisher:
ISBN:
Category :
Languages : en
Pages : 8
Book Description
This investigation covers an effort directed at the problem of obtaining Indium phosphide, by liquid phase epitaxy, for use in high-electric-field applications such as in microwave electron devices. It covers the area of determining the growth rate, the area of obtaining high purity, the area of alloyed contacts, and the determination of high-field properties. It is concluded that multiple-layer InP can be grown predictably and repeatably by liquid phase epitaxy using a multiple-well boat with the substrate on the bottom of the melt. It is also concluded that the density of total ionized impurities is the major remaining problem preventing the use of liquid phase epitaxial InP in microwave device applications. It also appears that carbon, as well as silicon, may contribute substantially to this impurity density.
Preparation and Characterization of N/P Indium Phosphide Homojunction Solar Cell by Liquid Phase Epitaxy
Author: Usha Holla FriedrichPublisher:
ISBN:
Category : Solar batteries
Languages : en
Pages : 162
Book Description
The Growth of Gallium Indium Arsenic Phosphide by Liquid-phase Epitaxy
Author: R. NaylerMorphology and Purity of Epitaxial Indium Phosphide Grown by Liquid Phase Epitaxy
Author: Sunil Bhaskar PhatakPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 270
Book Description
Author: Gangyi Chen
Author: Brian Keith Fuller