Author: Margaret FolkardPublisher:
ISBN: 9780642898746
Category : Gallium arsenide
Languages : en
Pages : 25
Book Description
Liquid Phase Epitaxial Growth of Gallium Arsenide
Author: Margaret FolkardPublisher:
ISBN: 9780642898746
Category : Gallium arsenide
Languages : en
Pages : 25
Book Description
The Measurement of Temperature Instabilities and Their Effect on the Liquid Phase Epitaxial Growth of Gallium Arsenide
Author: Margaret FolkardPublisher:
ISBN: 9780642898739
Category : Gallium arsenide
Languages : en
Pages : 14
Book Description
The Liquid Phase Epitaxial Growth Of Gallium Arsenide And Aluminium Gallium Arsenide For Double Heterostructure Laser Diodes
Author: Standen Nigel DouglasPublisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 162
Book Description
The Controlled Growth of Liquid Phase Epitaxial Gallium Arsenide Layers
Author: Michael Emmanuel LeePublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 224
Book Description
The Liquid Phase Epitaxial Growth of Aluminum Gallium Arsenide Avalanche Photodiodes
Author: Stephen Charles SmithPublisher:
ISBN:
Category :
Languages : en
Pages : 90
Book Description
Growth and Characterisation of Liquid Phase Epitaxial Gallium Arsenide
Author: D. AlexievLiquid Phase Epitaxial Growth of Constant Composition Indium Gallium Arsenide Phosphide Layers
Author: Louis Walter CookCurrent Controlled Liquid Phase Epitaxial Growth of GaAs
Author: Salem Omar IssaPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 72
Book Description
Recent Advances in the Growth of Epitaxial Gallium Arsenide
Author: Kenneth L. KlohnPublisher:
ISBN:
Category :
Languages : en
Pages : 43
Book Description
This report is a review of recent advances in the epitaxial growth of gallium arsenide. The lower temperatures (550-800C) associated with the epitaxial process, as compared to bulk growth (1240C), has aided in the achievement of high purity gallium arsenide layers with low defect density and good homogeneity. A number of systems have been investigated and developed for epitaxial growth of gallium arsenide and each of these is discussed in regard to its associated technology and procedure, chemical reaction, indicated results, advantages and disadvantages. These systems include: (1) vapor growth with the following vapor transport agents: HCl, GaCl3, water vapor, iodine, arsine; (2) liquid phase epitaxy; (3) traveling solvent zone; (4) vapor-liquid-solid; (5) evaporation. All systems require a careful surface preparation of the substrate and the use of high purity starting materials to obtain high purity Gas with good homogeneity and crystal perfection. The highest reported mobility for GaAs was obtained using the liquid phase solution regrowth technique. (Author).
Liquid Phase Epitaxial Growth and Heterointerface Characteristics of Long-wavelength Indium-gallium-arsenide-phosphide Heterostructures
Author: Paul Edward BrunemeierPublisher:
ISBN:
Category :
Languages : en
Pages : 175
Book Description