Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
LIQUID PHASE EPITAXIAL GROWTH OF Ga1) Al As-GaAs HETEROSTRUCTURES.
Author: Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials
Author: Peter CapperPublisher: John Wiley & Sons
ISBN: 9780470319499
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Semiconductor Heterojunctions
Author: B. L. SharmaPublisher: Elsevier
ISBN: 1483280861
Category : Technology & Engineering
Languages : en
Pages : 225
Book Description
Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers. Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then introduced to the energy band profiles of isotype and anisotype heterojunctions, the practical aspects of their fabrication and characterization, and their electronic and optoelectronic properties. Some methods used in the preparation of heterojunctions are also described, including the chemical method, solution growth method, alloying method, and sputtering method. The remaining chapters focus on the characterization of the grown layers, examples of heterojunction devices, and experimental work on heterojunctions. This monograph is intended for research workers and graduate students.
Heterostructure Lasers Part A
Author: H.C. Jr. CaseyPublisher: Elsevier
ISBN: 0323157696
Category : Technology & Engineering
Languages : en
Pages : 287
Book Description
Heterostructure Lasers, Part A: Fundamental Principles deals with the fundamental principles, preparation, and operating characteristics of heterostructure lasers. Each major topic is introduced along with the basic laws that govern the observed phenomena. The expressions relevant to heterostructure lasers are derived from the basic laws, and realistic numerical examples based on the GaAs-AlxGa1-xAs heterostructure are given. This book is comprised of four chapters and begins with a discussion on some of the early studies of injection lasers and an overview of the fundamental concepts of heterostructure lasers. Stimulated emission and room temperature continuous-wave operation with injection lasers are described, together with the fundamentals of waveguiding, gain, and carrier confinement in heterostructures. Optical fields and wave propagation are considered, along with slab-electric waveguides; the relationships between absorption, stimulated emission, and spontaneous emission; optical absorption and emission rates in semiconductors; and electrical properties of heterojunctions. This monograph will be of interest to physicists.
Solar Energy Update
Author: Research in Progress
Author: Physics of Semiconductor Devices
Author: Vikram KumarPublisher: Allied Publishers
ISBN: 9780819445001
Category : Semiconductors
Languages : en
Pages : 748
Book Description
Heterostructure Lasers Part B
Author: H.C. Jr. CaseyPublisher: Elsevier
ISBN: 0323155081
Category : Technology & Engineering
Languages : en
Pages : 345
Book Description
Heterostructure Lasers, Part B: Materials and Operating Characteristics focuses on the operating characteristics of heterostructure lasers and the semiconductor materials used to fabricate them. Each major topic is introduced along with the basic laws that govern the observed phenomena. The expressions relevant to heterostructure lasers are derived from the basic laws, and realistic numerical examples based on the GaAs-AlxGa1-xAs heterostructure are given. This book is comprised of four chapters and begins with a discussion on semiconductor materials that have been used most extensively to fabricate heterostructure injection lasers, particularly combinations of III-V compounds. IV-VI binary compounds and their solutions are described, along with compositional grading for heterostructure lasers. The next chapter presents the phase equilibria, impurity incorporation, and the epitaxial growth techniques for heterostructure lasers, namely, liquid-phase epitaxy, molecular-beam epitaxy, and chemical vapor deposition. The fabrication and operating characteristics of both broad-area and stripe-geometry heterostructure lasers are then examined. The final chapter is devoted to the degradation of heterostructure lasers, with emphasis on catastrophic mirror damage at high power densities, ""dark-line defect"" formation, and gradual degradation. This monograph will be of interest to physicists.
III-V Ternary Semiconducting Compounds-Data Tables
Author: M. NeubergerPublisher: Springer Science & Business Media
ISBN: 1468461656
Category : Technology & Engineering
Languages : en
Pages : 61
Book Description
Gallium-Aluminum-Antimony System.- Gallium-Aluminum-Arsenic System.- Gallium-Aluminum-Phosphorous System.- Gallium-Arsenic-Antimony System.- Gallium-Arsenic-Phosphorous System.- Gallium-Indium-Antimony System.- Gallium-Indium-Arsenic System.- Gallium-Indium-Phosphorous System.- Indium-Arsenic-Antimony System.- Indium-Arsenic-Phosphorous System.
Gas Source Molecular Beam Epitaxy
Author: Morton B. PanishPublisher: Springer Science & Business Media
ISBN: 3642781276
Category : Science
Languages : en
Pages : 441
Book Description
The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.