Author: Paul Edward BrunemeierPublisher:
ISBN:
Category :
Languages : en
Pages : 175
Book Description
Liquid Phase Epitaxial Growth and Heterointerface Characteristics of Long-wavelength Indium-gallium-arsenide-phosphide Heterostructures
Author: Paul Edward BrunemeierPublisher:
ISBN:
Category :
Languages : en
Pages : 175
Book Description
Liquid Phase Epitaxial Growth and Luminescence Charactersitics of Indium Gallium Phosphide Arsenide-indium Phosphide Quantum-well Heterostructures
Author: Edward Anthony RezekPublisher:
ISBN:
Category :
Languages : en
Pages : 326
Book Description
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials
Author: Peter CapperPublisher: John Wiley & Sons
ISBN: 9780470319499
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Liquid Phase Epitaxial Growth and Characterization of High Purity Gallium-indium-arsenide-phosphide Semiconductor Alloys Lattice Matched to Indium Phosphide Substrates
Author: James D. OliverPublisher:
ISBN:
Category : Indium phosphide
Languages : en
Pages : 372
Book Description
Liquid Phase Epitaxial Growth of Constant Composition Indium Gallium Arsenide Phosphide Layers
Author: Louis Walter CookComprehensive Dissertation Index
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 1016
Book Description
Department of Electrical and Computer Engineering
Author: University of Illinois at Urbana-Champaign. Department of Electrical and Computer EngineeringPublisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 36
Book Description
The Summary of Engineering Research
Author: University of Illinois at Urbana-Champaign. Office of Engineering PublicationsPublisher:
ISBN:
Category : Engineering
Languages : en
Pages : 336
Book Description
Dissertation Abstracts International
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 654
Book Description
Vapor Phase Epitaxial Growth of Gallium Arsenide, Indium Phosphide, and Indium Gallium Arsenide by the Hydride Technique
Author: Lawrence Martin ZinkiewiczPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 202
Book Description