Liquid Encapsulated Compounding and Czochralski Growth of Semi-Insulating Gallium Arsenide for Microwave/Millimeter-Wave Applications PDF Download
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Author: T. R. AuCoin Publisher: ISBN: Category : Languages : en Pages : 17
Book Description
A wide variety of semiconductor devices utilizing gallium arsenide are currently under development by the military for use in secure communication, improved surveillance, and high speed digital logic systems. The GaAs field effect transistor, a critical component in these systems, is experiencing a rapidly expanding use in oscillator, mixer, logic element, power amplification, and low-noise/high-gain applications. However, the full potential of this device has not been realized, partly because of poor and unpredictable quality semi-insulating GaAs substrates. More specifically, native defects, electrically active impurities, and diffusing charge traps are problems associated with commercial substrates. A silicon- and carbon-free modification of the liquid encapsulated Czochralski technique is described which yields high purity semi-insulating GaAs (approximately 10 to the 8th ohm-cm) without the intentional addition of charge compensators. The technique employs liquid encapsulated compounding of GaAs at nitrogen pressures to 100 atm, ultrapure elements, and pyrolytic boron nitride crucibles. A high pressure (135 atm) Varian HPCZ Czochralski crystal puller is employed for both compounding and crystal growth. (Author).
Author: T. R. AuCoin Publisher: ISBN: Category : Languages : en Pages : 17
Book Description
A wide variety of semiconductor devices utilizing gallium arsenide are currently under development by the military for use in secure communication, improved surveillance, and high speed digital logic systems. The GaAs field effect transistor, a critical component in these systems, is experiencing a rapidly expanding use in oscillator, mixer, logic element, power amplification, and low-noise/high-gain applications. However, the full potential of this device has not been realized, partly because of poor and unpredictable quality semi-insulating GaAs substrates. More specifically, native defects, electrically active impurities, and diffusing charge traps are problems associated with commercial substrates. A silicon- and carbon-free modification of the liquid encapsulated Czochralski technique is described which yields high purity semi-insulating GaAs (approximately 10 to the 8th ohm-cm) without the intentional addition of charge compensators. The technique employs liquid encapsulated compounding of GaAs at nitrogen pressures to 100 atm, ultrapure elements, and pyrolytic boron nitride crucibles. A high pressure (135 atm) Varian HPCZ Czochralski crystal puller is employed for both compounding and crystal growth. (Author).
Author: Takahiko Misugi Publisher: Springer Science & Business Media ISBN: 1475797745 Category : Science Languages : en Pages : 311
Book Description
In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.
Author: Thomas R. Aucoin Publisher: ISBN: Category : Languages : en Pages : 14
Book Description
A wide variety of semiconductor devices utilizing gallium arsenide (GaAs) are currently under development by the Army for use in secure communication and improved surveillance systems. GaAs is a semiconductor material characterized by a very high electron mobility, a direct band gap of 1.43 eV, and a high intrinsic resistivity (approximately equal to ten to the 8th power ohm/cm). The low field mobility of electrons in GaAs is one of its greatest attributes and offers high frequency operation in devices such as the field effect transistor (FET). The GaAs FET, a critical component in emerging military systems, is experiencing a rapidly expanding use in oscillator, mixer, logic element, power amplification, and low noise/high gain applications. This device threatens to replace virtually all low noise traveling wave tubes at frequencies from 4 to 30 GHz; is an attractive substitute for difficult to manufacture devices such as Gunn diodes for 4 to 8 GHz operation; and, monolithically fabricated as logic gates, can function at speeds to 10 GHz. In general then, GaAs FET's will eventually replace device configurations of more complex circuitry. However, its full potential has not been realized, largely due to the chronic material problems experienced by device manufacturers.
Author: T. R. AuCoin
Author: T. R. AuCoin
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Author: Takahiko Misugi
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Author: Paul David Thomas
Author: Thomas R. Aucoin
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Author: Paul David Thomas
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