模拟CMOS集成电路设计(国外大学优秀教材——微电子类系列(影印版)) PDF Download

Author: RCA Corporation. Solid State Division
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 580

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Author: Behzad Razavi
Publisher: 清华大学出版社有限公司
ISBN: 9787302108863
Category : Linear integrated circuits
Languages : zh-CN
Pages : 712

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Book Description
本书介绍了模拟电路设计的基本概念, 说明了CMOS模拟集成电路设计技术的重要作用, 描述了MOS器件的物理模型及工作特性等.

Author: Douglas W. Webbink
Publisher:
ISBN:
Category : Electronic industries
Languages : en
Pages : 224

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Book Description

Author: James M.. Fiore
Publisher:
ISBN: 9788172247782
Category : Linear integrated circuits
Languages : en
Pages : 0

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Book Description
The goal of this book is to encourage the reader to become proficient in the analysis and design of circuits utilizing modern linear integrated circuits. It progresses from the fundamental circuit building blocks through to analog and digital conversion systems. A methodical step-by-step presentation introduces the basic idealized operational amplifiers and eventually examines practical limitations in great detail. Each chapter has a problem set and contains extended topic to present extra discussion and details about the subject.

Author: E. Bleuler
Publisher: Academic Press
ISBN: 1483191761
Category : Technology & Engineering
Languages : en
Pages : 461

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Book Description
Methods of Experimental Physics, Volume 2 – Part A: Electronic Methods, Second Edition focuses on techniques and experimental methods involving vacuum-tube and solid-state electronic devices and vacuum-tube circuitry. This volume consists of eight main topics—passive linear circuit elements and networks, semiconductor circuit elements, vacuum tubes, gas tubes, rectifier circuits and power supplies, amplifiers, oscillators, and nonlinear circuits. In these topics, this book specifically discusses the relations between time and frequency response; devices employing bulk semiconductor properties; Richardson-Dushman equation; and gas tube phenomena. The full-wave rectifiers with capacitive load; vacuum tube and field-effect transistor bias circuits; and harmonic oscillators are also elaborated. This text likewise covers the oscillators that use negative resistance devices; field-effect transistors; and analog-to-digital (A/D) converters. This publication is a good source for physicists and students interested in techniques and methods involving electronic equipment.

Author:
Publisher:
ISBN:
Category : Microelectronics
Languages : en
Pages : 264

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Book Description

Author: Hubert Kaeslin
Publisher: Cambridge University Press
ISBN: 0521882672
Category : Technology & Engineering
Languages : en
Pages : 878

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Book Description
This practical, tool-independent guide to designing digital circuits takes a unique, top-down approach, reflecting the nature of the design process in industry. Starting with architecture design, the book comprehensively explains the why and how of digital circuit design, using the physics designers need to know, and no more.

Author: Hans Camenzind
Publisher: Virtualbookworm Publishing
ISBN: 1589397185
Category : Analog integrated circuits
Languages : en
Pages : 244

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Book Description
A comprehensive introduction to CMOS and bipolar analog IC design. The book presumes no prior knowledge of linear design, making it comprehensible to engineers with a non-analog back-ground. The emphasis is on practical design, covering the entire field with hundreds of examples to explain the choices. Concepts are presented following the history of their discovery. Content: 1. Devices Semiconductors, The Bipolar Transistor, The Integrated Circuit, Integrated NPN Transistors, The Case of the Lateral PNP Transistor, CMOS Transistors, The Substrate PNP Transistor, Diodes, Zener Diodes, Resistors, Capacitors, CMOS vs. Bipolar; 2. Simulation, DC Analysis, AC Analysis, Transient Analysis, Variations, Models, Diode Model, Bipolar Transis-tor Model, Model for the Lateral PNP Transistor, MOS Transistor Models, Resistor Models, Models for Capacitors; 3. Current Mirrors; 4. Differential Pairs; 5. Current Sources; 6. Time Out: Analog Measures, dB, RMS, Noise, Fourier Analysis, Distortion, Frequency Compensation; 7. Bandgap References; 8. Op Amps; 9. Comparators; 10. Transimpedance Amplifiers; 11. Timers and Oscillators; 12. Phase-Locked Loops; 13. Filters; 14. Power, Linear Regulators, Low Drop-Out Regulators, Switching Regulators, Linear Power Amplifiers, Switching Power Am-plifiers; 15. A to D and D to A, The Delta-Sigma Converter; 16. Odds and Ends, Gilbert Cell, Multipliers, Peak Detectors, Rectifiers and Averaging Circuits, Thermometers, Zero-Crossing Detectors; 17. Layout.

Author: Alan B. Grebene
Publisher: John Wiley & Sons
ISBN: 0471430781
Category : Technology & Engineering
Languages : en
Pages : 914

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Book Description
A practical, engineering book discussing the most modern and general techniques for designing analog integrated circuits which are not digital (excluding computer circuits). Covers the basics of the devices, manufacturing technology, design procedures, shortcuts, and analytic techniques. Includes examples and illustrations of the best current practice.

Author: Christian C. Enz
Publisher: John Wiley & Sons
ISBN: 0470855452
Category : Technology & Engineering
Languages : en
Pages : 328

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Book Description
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.