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Author: Siva G. Narendra Publisher: Springer Science & Business Media ISBN: 9780387281339 Category : Technology & Engineering Languages : en Pages : 308
Book Description
Covers in detail promising solutions at the device, circuit, and architecture levels of abstraction after first explaining the sensitivity of the various MOS leakage sources to these conditions from the first principles. Also treated are the resulting effects so the reader understands the effectiveness of leakage power reduction solutions under these different conditions. Case studies supply real-world examples that reap the benefits of leakage power reduction solutions as the book highlights different device design choices that exist to mitigate increases in the leakage components as technology scales.
Author: Siva G. Narendra Publisher: Springer Science & Business Media ISBN: 9780387281339 Category : Technology & Engineering Languages : en Pages : 308
Book Description
Covers in detail promising solutions at the device, circuit, and architecture levels of abstraction after first explaining the sensitivity of the various MOS leakage sources to these conditions from the first principles. Also treated are the resulting effects so the reader understands the effectiveness of leakage power reduction solutions under these different conditions. Case studies supply real-world examples that reap the benefits of leakage power reduction solutions as the book highlights different device design choices that exist to mitigate increases in the leakage components as technology scales.
Author: Siva G. Narendra Publisher: Springer ISBN: 9780387257372 Category : Technology & Engineering Languages : en Pages : 308
Book Description
Covers in detail promising solutions at the device, circuit, and architecture levels of abstraction after first explaining the sensitivity of the various MOS leakage sources to these conditions from the first principles. Also treated are the resulting effects so the reader understands the effectiveness of leakage power reduction solutions under these different conditions. Case studies supply real-world examples that reap the benefits of leakage power reduction solutions as the book highlights different device design choices that exist to mitigate increases in the leakage components as technology scales.
Author: Harry J.M. Veendrick Publisher: Springer ISBN: 3319475975 Category : Technology & Engineering Languages : en Pages : 639
Book Description
This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.
Author: Bernhard Goll Publisher: Springer ISBN: 3662444828 Category : Technology & Engineering Languages : en Pages : 259
Book Description
This book covers the complete spectrum of the fundamentals of clocked, regenerative comparators, their state-of-the-art, advanced CMOS technologies, innovative comparators inclusive circuit aspects, their characterization and properties. Starting from the basics of comparators and the transistor characteristics in nanometer CMOS, seven high-performance comparators developed by the authors in 120nm and 65nm CMOS are described extensively. Methods and measurement circuits for the characterization of advanced comparators are introduced. A synthesis of the largely differing aspects of demands on modern comparators and the properties of devices being available in nanometer CMOS, which are posed by the so-called nanometer hell of physics, is accomplished. The book summarizes the state of the art in integrated comparators. Advanced measurement circuits for characterization will be introduced as well as the method of characterization by bit-error analysis usually being used for characterization of optical receivers. The book is compact, and the graphical quality of the illustrations is outstanding. This book is written for engineers and researchers in industry as well as scientists and Ph.D students at universities. It is also recommendable to graduate students specializing on nanoelectronics and microelectronics or circuit design.
Author: Elie Maricau Publisher: Springer Science & Business Media ISBN: 1461461634 Category : Technology & Engineering Languages : en Pages : 208
Book Description
This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed. The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.
Author: Mohamed Hassan Abu-Rahma Publisher: ISBN: Category : Languages : en Pages : 156
Book Description
Aggressive scaling of CMOS technology in sub-90nm nodes has created huge challenges. Variations due to fundamental physical limits, such as random dopants fluctuation (RDF) and line edge roughness (LER) are increasing significantly with technology scaling. In addition, manufacturing tolerances in process technology are not scaling at the same pace as transistor's channel length due to process control limitations (e.g., sub-wavelength lithography). Therefore, within-die process variations worsen with successive technology generations. These variations have a strong impact on the maximum clock frequency and leakage power for any digital circuit, and can also result in functional yield losses in variation-sensitive digital circuits (such as SRAM). Moreover, in nanometer technologies, digital circuits show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost while achieving higher performance and density. It is therefore not surprising that the International Technology Roadmap for Semiconductors (ITRS) lists variability as one of the most challenging obstacles for IC design in nanometer regime. To facilitate variation-tolerant design, we study the impact of random variations on the delay variability of a logic gate and derive simple and scalable statistical models to evaluate delay variations in the presence of within-die variations. This work provides new design insight and highlights the importance of accounting for the effect of input slew on delay variations, especially at lower supply voltages.
Author: J. Ted Dibene, II Publisher: John Wiley & Sons ISBN: 1119263298 Category : Science Languages : en Pages : 519
Book Description
A professional guide to the fundamentals of power integrity analysis with an emphasis on silicon level power integrity Power Integrity for Electrical and Computer Engineers embraces the most recent changes in the field, offers a comprehensive introduction to the discipline of power integrity, and provides an overview of the fundamental principles. Written by noted experts on the topic, the book goes beyond most other resources to focus on the detailed aspects of silicon and optimization techniques in order to broaden the field of study. This important book offers coverage of a wide range of topics including signal analysis, EM concepts for PI, frequency domain analysis for PI, numerical methods (overview) for PI, and silicon device PI modeling. Power Integrity for Electrical and Computer Engineers examine platform technologies, system considerations, power conversion, system level modeling, and optimization methodologies. To reinforce the material presented, the authors include example problems. This important book: • Includes coverage on convergence, accuracy, and error analysis and explains how these can be used to analyze power integrity problems • Contains information for modeling the power converter from the PDN to the load in a full system level model • Explores areas of device level modeling of silicon as related to power integrity • Contains example word problems that are related to an individual chapter’s subject Written for electrical and computer engineers and academics, Power Integrity for Electrical and Computer Engineers is an authoritative guide to the fundamentals of power integrity and explores the topics of power integrity analysis, power integrity analytics, silicon level power integrity, and optimization techniques.