Author: Jagdish Narayan
Publisher: North Holland
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 800

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Book Description

Author: Van Tran Nguyen
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 586

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Book Description

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description

Author: John C. C. Fan
Publisher: North Holland
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 824

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Book Description

Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 560

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Book Description

Author: D. K. Biegelsen
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 768

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author: E.I. Givargizov
Publisher: Springer Science & Business Media
ISBN: 146153660X
Category : Science
Languages : en
Pages : 213

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Book Description
This volume, as the previous ones, consists primarily of review artic1es. However, it also contains a large quantity of original material on the growth of crystals and films. Priority is given to experimental work. Only two artic1es are concerned exc1usively with the theory of crystal growth. Theoretical aspects are treated in several others. This volume is divided into three parts. Part I, "Epitaxy and Transformations in Thin Films," stems from the current broad application of lasers and optical effects in general to crystal growth (in particular, the growth of thin films). The first three artic1es of the book are devoted to this topic. In particular, the laser pulse vaporization method, for which a comparatively slow deposition rate is typical (which should not always be viewed as a drawback), is distinguished by the unique kinetics of the initial growth stages. These are not entirely explained. However, this method is completely suitable for oriented or generally ordered growth of films under otherwise equal conditions. Another artic1e of this section is based on use of ultrashort (down to picosecond) laser pulses. It emphasizes the nonequilibrium processes of crystallization and decrystallization that are characteristic for such influences. In particular, material heated above its melting point and metastable states in the semiconductor melt exhibit these qualities.

Author: Victor E. Borisenko
Publisher: Springer Science & Business Media
ISBN: 1489918043
Category : Technology & Engineering
Languages : en
Pages : 374

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Book Description
Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.

Author: E.I. Givargizov
Publisher: Springer Science & Business Media
ISBN: 1489925600
Category : Technology & Engineering
Languages : en
Pages : 377

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Book Description
Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.

Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 1475726112
Category : Technology & Engineering
Languages : en
Pages : 277

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Book Description
Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition describes the different facets of SOI technology. SOI chips are now commercially available and SOI wafer manufacturers have gone public. SOI has finally made it out of the academic world and is now a big concern for every major semiconductor company. SOI technology has indeed deserved serious recognition: high-temperature (400°C), extremely rad-hard (500 Mrad(Si)), high-density (16 Mb, 0.9-volt DRAM), high-speed (several GHz) and low-voltage (0.5 V) SOI circuits have been demonstrated. Strategic choices in favor of the use of SOI for low-voltage, low-power portable systems have been made by several major semiconductor manufacturers. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI device processing, the physics of the SOI MOSFET as well as that of SOI other devices, and the performances of SOI circuits are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves as an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition is recommended for use as a textbook for classes on semiconductor device processing and physics. The level of the book is appropriate for teaching at both the undergraduate and graduate levels. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition includes the new materials, devices, and circuit concepts which have been devised since the publication of the first edition. The circuit sections, in particular, have been updated to present the performances of SOI devices for low-voltage, low-power applications, as well as for high-temperature, smart-power, and DRAM applications. The other sections, such as those describing SOI materials, the physics of the SOI MOSFET and other devices have been updated to present the state of the art in SOI technology.