Author: G.L. OlsonPublisher:
ISBN:
Category :
Languages : en
Pages : 77
Book Description
Kinetics of Solids Phase Crystallization in Amorphous Silicon
Author: G.L. OlsonKinetics of Solid Phase Crystallization in Amorphous Silicon
Author: G. L. OlsonGrowth and Segregation Kinetics During Thermal and Ion Beam Induced Epitaxial Crystallization of Amorphous Silicon
Author: Jonathan S. CusterSolid Phase Epitaxy in Amorphous Silicon
Author: Min WuPublisher:
ISBN:
Category :
Languages : en
Pages : 57
Book Description
The kinetics and mechanism for solid phase epitaxy (SPE) in has been widely studied due to its critical use in the semiconductor industry. Extensive studies have established the kinetics of this transformation over a wide range of temperatures and time scales; however, careful exploration of the behavior under millisecond thermal annealing is limited. As laser spike annealing is now a widely adopted processing tool for semiconductor manufacturing, comparison and understanding of the kinetics in this time regime is critical. In this work, the lateral-gradient laser spike annealing method was used to investigate the solid phase epitaxy of amorphous silicon over dwell times from 250 ms to 10 ms using CO2 laser irradiation. Silicon samples, amorphized by Si self-implantation, were annealed under varying dwell times and peak temperatures. Transformations from amorphous to crystalline Si, and ultimately melt, were observed using white light and narrow band LED microscope imaging. The width of fully crystallized zone, and the width of the melted area were recorded to determine threshold laser powers for the onset of full crystallization and melting. Partially crystallized areas (partial SPE) was observed at the boundary of the fully crystallized zone; to understand the SPE kinetics in this region, visible light spectroscopy was used to measure the reflectance as a function of wavelength to quantify the degree of SPE growth. These rates are compared with previous estimates using estimated peak temperatures from earlier calibrations of the LSA system. SPE rates are exponentially dependent on temperature and thus also provide a means of calibrating the temperature reached during LSA as a function of the laser power. Based on measured and estimated SPE rates in the LSA timescale, the peak temperature as a function of laser power was estimated for the current LSA configuration. Results of this calibration are compared with earlier temperature calibrations.
Solid-Phase Crystallization of Amorphous Silicon Films
Author: Dong Nyung LeePublisher:
ISBN:
Category : Science
Languages : en
Pages :
Book Description
Solid-Phase Crystallization of Amorphous Silicon Films.
Crystallization Kinetics in Amorphous Silicon Thin Films
Author: Brenda D. KingPublisher:
ISBN:
Category : Amorphous substances
Languages : en
Pages : 88
Book Description
Solid Phase Crystallization of Amorphous Semiconductors and Ion Mixing Effects in Metal/Si Systems
Author: Chien-Shing PaiPublisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 496
Book Description
Kinetic Processes
Author: Kenneth A. JacksonPublisher: John Wiley & Sons
ISBN: 3527604952
Category : Technology & Engineering
Languages : en
Pages : 424
Book Description
The formation of solids is governed by kinetic processes, which are closely related to the macroscopic behaviour of the resulting materials. With the main focus on ease of understanding, the author begins with the basic processes at the atomic level to illustrate their connections to material properties. Diffusion processes during crystal growth and phase transformations are examined in detail. Since the underlying mathematics are very complex, approximation methods typically used in practice are the prime choice of approach. Apart from metals and alloys, the book places special emphasis on the growth of thin films and bulk crystals, which are the two main pillars of modern device and semiconductor technology. All the presented phenomena are tied back to the basic thermodynamic properties of the materials and to the underlying physical processes for clarity.
Kinetics of Crystallization of Selected Amorphous Silicon Films
Author: Franklin David Van GiesonPublisher:
ISBN:
Category : Amorphous substances
Languages : en
Pages : 150
Book Description
Advanced Topics in Crystallization
Author: Yitzhak MastaiPublisher: BoD – Books on Demand
ISBN: 9535121251
Category : Science
Languages : en
Pages : 374
Book Description
In nearly all process industries, crystallization is used at some stage as a method of production, purification or recovery of solid materials. In recent years, a number of new applications have also come to rely on crystallization processes such as the crystallization of nano and amorphous materials. The articles in this book have been contributed by some of the most respected researchers in this area and cover the frontier areas of research and developments in crystallization processes. Divided into three sections, this book provides the latest research developments in many aspects of crystallization including the crystallization of biological macromolecules and pharmaceutical compounds, the crystallization of nanomaterials and the crystallization of amorphous and glassy materials. This book is of interest to both fundamental research and practicing scientists and will prove invaluable to all chemical engineers and industrial chemists in process industries, as well as crystallization workers and students in industry and academia.