Author: Uttam Shyamalindu GhoshalPublisher:
ISBN:
Category :
Languages : en
Pages : 360
Book Description
Josephson-CMOS Memories
Author: Uttam Shyamalindu GhoshalPublisher:
ISBN:
Category :
Languages : en
Pages : 360
Book Description
Josephson-CMOS Hybrid Memories
Author: Qingguo LiuPublisher:
ISBN: 9780549169147
Category :
Languages : en
Pages : 358
Book Description
Lack of high-density, fast and memory has been a long-standing problem in superconducting digital electronics. Alternative Josephson-junction-based memory cells and peripheral circuits have intrinsic problems which impede the application of that kind of memory. The CMOS-Josephson hybrid memory idea was proposed in 1992 to circumvent this problem. Evaluation of some issues was carried out in the 1990's. In the present work we have designed and demonstrated a 64-kb CMOS-Josephson hybrid memory working at 1 GHz; it has proved to be a promising memory candidate for superconducting high-end computing applications.
Fundamentals and Frontiers of the Josephson Effect
Author: Francesco TafuriPublisher: Springer Nature
ISBN: 3030207269
Category : Technology & Engineering
Languages : en
Pages : 859
Book Description
This book provides a comprehensive and up-to-date description of the Josephson effect, a topic of never-ending interest in both fundamental and applied physics. In this volume, world-renowned experts present the unique aspects of the physics of the Josephson effect, resulting from the use of new materials, of hybrid architectures and from the possibility of realizing nanoscale junctions. These new experimental capabilities lead to systems where novel coherent phenomena and transport processes emerge. All this is of great relevance and impact, especially when combined with the didactic approach of the book. The reader will benefit from a general and modern view of coherent phenomena in weakly-coupled superconductors on a macroscopic scale. Topics that have been only recently discussed in specialized papers and in short reviews are described here for the first time and organized in a general framework. An important section of the book is also devoted to applications, with focus on long-term, future applications. In addition to a significant number of illustrations, the book includes numerous tables for comparative studies on technical aspects.
Single Flux Quantum Integrated Circuit Design
Author: Gleb KrylovPublisher: Springer Nature
ISBN: 3031474759
Category :
Languages : en
Pages : 441
Book Description
A 4 K CMOS Self-calibration Circuit for Josephson Flash-type Analog-to-digital Converters
Author: Kishore Venkata SeendripuPublisher:
ISBN:
Category :
Languages : en
Pages : 434
Book Description
Device and Circuit Cryogenic Operation for Low Temperature Electronics
Author: Francis BalestraPublisher: Springer Science & Business Media
ISBN: 1475733186
Category : Technology & Engineering
Languages : en
Pages : 267
Book Description
Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
100 Years of Superconductivity
Author: Horst RogallaPublisher: Taylor & Francis
ISBN: 143984948X
Category : Science
Languages : en
Pages : 866
Book Description
Even a hundred years after its discovery, superconductivity continues to bring us new surprises, from superconducting magnets used in MRI to quantum detectors in electronics. 100 Years of Superconductivity presents a comprehensive collection of topics on nearly all the subdisciplines of superconductivity. Tracing the historical developments in supe
Low Temperature Electronics and Low Temperature Cofired Ceramic Based Electronic Devices
Author: Electrochemical Society. MeetingPublisher: The Electrochemical Society
ISBN: 9781566774123
Category : Technology & Engineering
Languages : en
Pages : 332
Book Description
Compound and Josephson High-Speed Devices
Author: Takahiko MisugiPublisher: Springer Science & Business Media
ISBN: 1475797745
Category : Science
Languages : en
Pages : 311
Book Description
In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.
Author: