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Author: John Reginald Barker Publisher: University of Glasgow French and German Publications ISBN: Category : Computers Languages : en Pages : 186
Book Description
This is a collection of the papers from the 7th International Workshop on Computational Electronics. They explore: semiconductor device modelling; optoelectronic device simulation; particle simulation methods; and nanostructures.
Author: John Reginald Barker Publisher: University of Glasgow French and German Publications ISBN: Category : Computers Languages : en Pages : 186
Book Description
This is a collection of the papers from the 7th International Workshop on Computational Electronics. They explore: semiconductor device modelling; optoelectronic device simulation; particle simulation methods; and nanostructures.
Author: Francis Balestra Publisher: John Wiley & Sons ISBN: 1118622472 Category : Technology & Engineering Languages : en Pages : 518
Book Description
This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Author: Marek Wartak Publisher: CRC Press ISBN: 1003860982 Category : Technology & Engineering Languages : en Pages : 364
Book Description
Simulations play an increasingly important role not only in scientific research but also in engineering developments. Introduction to Simulations of Semiconductor Lasers introduces senior undergraduates to the design of semiconductor lasers and their simulations. The book begins with explaining the physics and fundamental characteristics behind semiconductor lasers and their applications. It presumes little prior knowledge, such that only a familiarity with the basics of electromagnetism and quantum mechanics is required. The book transitions from textbook explanations, equations, and formulas to ready-to-run numeric codes that enable the visualization of concepts and simulation studies. Multiple chapters are supported by MATLAB code which can be accessed by the students. These are ready-to-run, but they can be modified to simulate other structures if desired. Providing a unified treatment of the fundamental principles and physics of semiconductors and semiconductor lasers, Introduction to Simulations of Semiconductor Lasers is an accessible, practical guide for advanced undergraduate students of Physics, particularly for courses in laser physics. Key Features: A unified treatment of fundamental principles Explanations of the fundamental physics of semiconductor Explanations of the operation of semiconductor lasers An historical overview of the subject
Author: James E. Morris Publisher: CRC Press ISBN: 1351831976 Category : Technology & Engineering Languages : en Pages : 942
Book Description
Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal–oxide–semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include: Nanoscale advances in current MOSFET/CMOS technology Nano capacitors for applications such as electronics packaging and humidity sensors Single electron transistors and other electron tunneling devices Quantum cellular automata and nanomagnetic logic Memristors as switching devices and for memory Graphene preparation, properties, and devices Carbon nanotubes (CNTs), both single CNT and random network Other CNT applications such as terahertz, sensors, interconnects, and capacitors Nano system architectures for reliability Nanowire device fabrication and applications Nanowire transistors Nanodevices for spintronics The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries. This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.
Author: Michael Bonitz Publisher: World Scientific ISBN: 9789812705129 Category : Medical Languages : en Pages : 556
Book Description
Equilibrium and nonequilibrium properties of correlated many-body systems are of growing interest in many areas of physics, including condensed matter, dense plasmas, nuclear matter and particles. The most powerful and general method which is equally applied to all these areas is given by quantum field theory. This book provides an overview of the basic ideas and concepts of the method of nonequilibrium Green''s functions, written by the leading experts and presented in a way accessible to non-specialists and graduate students. It is complemented by invited review papers on modern applications of the method to a variety of topics, such as optics and quantum transport in semiconductors; superconductivity; strong field effects, QCD, and state-of-the-art computational concepts OCo from Green''s functions to quantum Monte Carlo and time-dependent density functional theory.The proceedings have been selected for coverage in: OCo Index to Scientific & Technical Proceedings (ISTP CDROM version / ISI Proceedings)"
Author: Mahdi Pourfath Publisher: Springer ISBN: 370911800X Category : Technology & Engineering Languages : en Pages : 268
Book Description
For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.
Author: Gustavo Neuberger Publisher: Springer Science & Business Media ISBN: 9400724276 Category : Technology & Engineering Languages : en Pages : 114
Book Description
With the development of Very-Deep Sub-Micron technologies, process variability is becoming increasingly important and is a very important issue in the design of complex circuits. Process variability is the statistical variation of process parameters, meaning that these parameters do not have always the same value, but become a random variable, with a given mean value and standard deviation. This effect can lead to several issues in digital circuit design. The logical consequence of this parameter variation is that circuit characteristics, as delay and power, also become random variables. Because of the delay variability, not all circuits will now have the same performance, but some will be faster and some slower. However, the slowest circuits may be so slow that they will not be appropriate for sale. On the other hand, the fastest circuits that could be sold for a higher price can be very leaky, and also not very appropriate for sale. A main consequence of power variability is that the power consumption of some circuits will be different than expected, reducing reliability, average life expectancy and warranty of products. Sometimes the circuits will not work at all, due to reasons associated with process variations. At the end, these effects result in lower yield and lower profitability. To understand these effects, it is necessary to study the consequences of variability in several aspects of circuit design, like logic gates, storage elements, clock distribution, and any other that can be affected by process variations. The main focus of this book will be storage elements.
Author: Yevgeny Mamontov Publisher: World Scientific ISBN: 9789812810540 Category : Mathematics Languages : en Pages : 332
Book Description
Annotation This book is one of the first few devoted to high-dimensional diffusion stochastic processes with nonlinear coefficients. These processes are closely associated with large systems of Ito's stochastic differential equations and with discretized-in-the-parameter versions of Ito's stochastic differential equations that are nonlocally dependent on the parameter. The latter models include Ito's stochastic integro-differential, partial differential and partial integro-differential equations.The book presents the new analytical treatment which can serve as the basis of a combined, analytical -- numerical approach to greater computational efficiency. Some examples of the modelling of noise in semiconductor devices are provided
Author: John Reginald Barker
Author: John Reginald Barker
Author: Francis Balestra
Author: Marek Wartak
Author: James E. Morris
Author: Michael Bonitz
Author: Mahdi Pourfath
Author: Gustavo Neuberger
Author: Yevgeny Mamontov
Author: 
Author: