Author: Junichi Murota
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
ISCSI-V - Proceedings of the Fifth International Symposium on Control of Semiconductor Interfaces
ISCSI-V
Proceedings of the Fifth International Symposium on Control of Semiconductor Interfaces
ISCSI-2
ISCSI-4 : proceedings of the fourth International Symposium on the Control of Semiconductor Interfaces, Karuizawa, Japan, October 21 - 25, 2002
Author: ISCSI
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 629
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 629
Book Description
ISCSI-3
Author: Tatau Nishinaga
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 634
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 634
Book Description
ICFSI-5
Proceedings of the Second International Symposium on the Control of Semiconductor Interfaces
Author: ISCSI. 2, 1996, Karuizawa
Publisher:
ISBN:
Category :
Languages : en
Pages : 856
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 856
Book Description
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment
Author: E. P. Gusev
Publisher: The Electrochemical Society
ISBN: 1566777917
Category : Science
Languages : en
Pages : 426
Book Description
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Publisher: The Electrochemical Society
ISBN: 1566777917
Category : Science
Languages : en
Pages : 426
Book Description
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Proceedings of the Third International Symposium on the Control of Semiconductor Interfaces
Author: ISCSI. 3, 1999, Karuizawa
Publisher:
ISBN:
Category :
Languages : en
Pages : 634
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 634
Book Description