Author: Toshinori Takagi
Publisher: Univ. Press of Mississippi
ISBN: 9780815511687
Category : Technology & Engineering
Languages : en
Pages : 244
Book Description
The technique of ionized-cluster beam (ICB) deposition, the fundamentals of ICB technology, and technical applications of thin films produced by ICB deposition are presented for those interested or working in the field. ICB processes are characterized, and equipment is available. The films deposited are often superior to those deposited by either evaporation or sputtering, and the range of control of the process exceeds other techniques by a great margin.
Ionized-Cluster Beam Deposition and Epitaxy
Author: Toshinori Takagi
Publisher: Univ. Press of Mississippi
ISBN: 9780815511687
Category : Technology & Engineering
Languages : en
Pages : 244
Book Description
The technique of ionized-cluster beam (ICB) deposition, the fundamentals of ICB technology, and technical applications of thin films produced by ICB deposition are presented for those interested or working in the field. ICB processes are characterized, and equipment is available. The films deposited are often superior to those deposited by either evaporation or sputtering, and the range of control of the process exceeds other techniques by a great margin.
Publisher: Univ. Press of Mississippi
ISBN: 9780815511687
Category : Technology & Engineering
Languages : en
Pages : 244
Book Description
The technique of ionized-cluster beam (ICB) deposition, the fundamentals of ICB technology, and technical applications of thin films produced by ICB deposition are presented for those interested or working in the field. ICB processes are characterized, and equipment is available. The films deposited are often superior to those deposited by either evaporation or sputtering, and the range of control of the process exceeds other techniques by a great margin.
Ionized Cluster Beam Technique for Deposition and Epitaxy
Gallium Nitride Film Deposition by Ionized Cluster Beam Epitaxy
Author: Ghulum Bakiri
Publisher:
ISBN:
Category : Organogallium compounds
Languages : en
Pages : 242
Book Description
An experimental Ionized Cluster Beam System similar in design to the one developed at Kyoto University in Japan was. designed and constructed in the Microelectronics Laboratory at NJIT. This involved making the working drawings, having the parts machined and then assembling the system in a vacuum system together with the necessary variable power supplies, meters, controls, gas inlets, cooling water connections, etc. Eleven deposition runs were then attempted to grow gallium nitride utilizing the system constructed. In a typical deposition run, gallium was vaporized from a boron nitride crucible at 1000° C and allowed to expand through a 0.5 mm nozzle into a low pressure region containing nitrogen at 1-5 X 10−4 torr in order to form clusters of about 1000 atoms each. The gallium clusters were ionized by an electron source (300 mA) and deposited on heated quartz substrates (550° C) for reactive growth with nitrogen. For the above deposition conditions, the film growth rate was only 1 A°/min and the films were highly insulating. Photoluminescence measurements and surface analysis of the grown films revealed boron contaimination which was then traced to water vapor contamination of the boron nitride crucible and heater. The water vapor if not driven out by pre-heating the crucible in an oven, caused the boron nitride to decompose at elevated temperatures introducing reactive contaminants at the substrate surface. Further experiments showed that for GaN deposition rates greater, than 1 A° /min (and up to 1 A° /sec) 0 the crucible temperature should be at least 1100° C but preferably around 1400° C.
Publisher:
ISBN:
Category : Organogallium compounds
Languages : en
Pages : 242
Book Description
An experimental Ionized Cluster Beam System similar in design to the one developed at Kyoto University in Japan was. designed and constructed in the Microelectronics Laboratory at NJIT. This involved making the working drawings, having the parts machined and then assembling the system in a vacuum system together with the necessary variable power supplies, meters, controls, gas inlets, cooling water connections, etc. Eleven deposition runs were then attempted to grow gallium nitride utilizing the system constructed. In a typical deposition run, gallium was vaporized from a boron nitride crucible at 1000° C and allowed to expand through a 0.5 mm nozzle into a low pressure region containing nitrogen at 1-5 X 10−4 torr in order to form clusters of about 1000 atoms each. The gallium clusters were ionized by an electron source (300 mA) and deposited on heated quartz substrates (550° C) for reactive growth with nitrogen. For the above deposition conditions, the film growth rate was only 1 A°/min and the films were highly insulating. Photoluminescence measurements and surface analysis of the grown films revealed boron contaimination which was then traced to water vapor contamination of the boron nitride crucible and heater. The water vapor if not driven out by pre-heating the crucible in an oven, caused the boron nitride to decompose at elevated temperatures introducing reactive contaminants at the substrate surface. Further experiments showed that for GaN deposition rates greater, than 1 A° /min (and up to 1 A° /sec) 0 the crucible temperature should be at least 1100° C but preferably around 1400° C.
Silicon Molecular Beam Epitaxy
Author: E. Kasper
Publisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Publisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
A Preliminary Study of Ionized Cluster Beam Epitaxy
Design of an Ionized Cluster Beam System for Thin Film Deposition and Cluster Size Measurement
Author: Steven K. Krommenhoek
Publisher:
ISBN:
Category : Gallium
Languages : en
Pages : 204
Book Description
Publisher:
ISBN:
Category : Gallium
Languages : en
Pages : 204
Book Description
Study of Ionized Cluster Beam Techniques for Reactive Deposition of Gallium Nitride Thin Films
Author: Jyh Sheen
Publisher:
ISBN:
Category : Electrophoretic deposition
Languages : en
Pages : 224
Book Description
Publisher:
ISBN:
Category : Electrophoretic deposition
Languages : en
Pages : 224
Book Description
Development and Study of an Ionized Cluster Beam Epitaxy System for the Growth of Compound Semiconductor Thin Films
Ion Beam-Enhanced Deposition and Ionized Cluster Beam Deposition
Author: James K. Hirvonen
Publisher:
ISBN:
Category :
Languages : en
Pages : 5
Book Description
Ion beam-enhanced deposition, presentation included conventional coating processes, ion implantation, controllable stoichiometry, superior adhesion, high-density coatings, low-temperature processing, wear, corrosion-resistant coatings, and ionized custer beam deposition.
Publisher:
ISBN:
Category :
Languages : en
Pages : 5
Book Description
Ion beam-enhanced deposition, presentation included conventional coating processes, ion implantation, controllable stoichiometry, superior adhesion, high-density coatings, low-temperature processing, wear, corrosion-resistant coatings, and ionized custer beam deposition.