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Ionized-Cluster Beam Deposition and Epitaxy

Ionized-Cluster Beam Deposition and Epitaxy PDF Author: Toshinori Takagi
Publisher: Univ. Press of Mississippi
ISBN: 9780815511687
Category : Technology & Engineering
Languages : en
Pages : 244

Book Description
The technique of ionized-cluster beam (ICB) deposition, the fundamentals of ICB technology, and technical applications of thin films produced by ICB deposition are presented for those interested or working in the field. ICB processes are characterized, and equipment is available. The films deposited are often superior to those deposited by either evaporation or sputtering, and the range of control of the process exceeds other techniques by a great margin.

Ionized-Cluster Beam Deposition and Epitaxy

Ionized-Cluster Beam Deposition and Epitaxy PDF Author: Toshinori Takagi
Publisher: Univ. Press of Mississippi
ISBN: 9780815511687
Category : Technology & Engineering
Languages : en
Pages : 244

Book Description
The technique of ionized-cluster beam (ICB) deposition, the fundamentals of ICB technology, and technical applications of thin films produced by ICB deposition are presented for those interested or working in the field. ICB processes are characterized, and equipment is available. The films deposited are often superior to those deposited by either evaporation or sputtering, and the range of control of the process exceeds other techniques by a great margin.

Ionized Cluster Beam Technique for Deposition and Epitaxy

Ionized Cluster Beam Technique for Deposition and Epitaxy PDF Author: Hiroshi Takaoka
Publisher:
ISBN:
Category :
Languages : en
Pages : 174

Book Description


Development and Study of an Ionized Cluster Beam Epitaxy System for the Growth of Compound Semiconductor Thin Films

Development and Study of an Ionized Cluster Beam Epitaxy System for the Growth of Compound Semiconductor Thin Films PDF Author: Martin James Fornek
Publisher:
ISBN:
Category :
Languages : en
Pages : 194

Book Description


Gallium Nitride Film Deposition by Ionized Cluster Beam Epitaxy

Gallium Nitride Film Deposition by Ionized Cluster Beam Epitaxy PDF Author: Ghulum Bakiri
Publisher:
ISBN:
Category : Organogallium compounds
Languages : en
Pages : 242

Book Description
An experimental Ionized Cluster Beam System similar in design to the one developed at Kyoto University in Japan was. designed and constructed in the Microelectronics Laboratory at NJIT. This involved making the working drawings, having the parts machined and then assembling the system in a vacuum system together with the necessary variable power supplies, meters, controls, gas inlets, cooling water connections, etc. Eleven deposition runs were then attempted to grow gallium nitride utilizing the system constructed. In a typical deposition run, gallium was vaporized from a boron nitride crucible at 1000° C and allowed to expand through a 0.5 mm nozzle into a low pressure region containing nitrogen at 1-5 X 10−4 torr in order to form clusters of about 1000 atoms each. The gallium clusters were ionized by an electron source (300 mA) and deposited on heated quartz substrates (550° C) for reactive growth with nitrogen. For the above deposition conditions, the film growth rate was only 1 A°/min and the films were highly insulating. Photoluminescence measurements and surface analysis of the grown films revealed boron contaimination which was then traced to water vapor contamination of the boron nitride crucible and heater. The water vapor if not driven out by pre-heating the crucible in an oven, caused the boron nitride to decompose at elevated temperatures introducing reactive contaminants at the substrate surface. Further experiments showed that for GaN deposition rates greater, than 1 A° /min (and up to 1 A° /sec) 0 the crucible temperature should be at least 1100° C but preferably around 1400° C.

A Preliminary Study of Ionized Cluster Beam Epitaxy

A Preliminary Study of Ionized Cluster Beam Epitaxy PDF Author: Jo Stephen Major
Publisher:
ISBN:
Category :
Languages : en
Pages : 122

Book Description


Development of an Ionized Cluster Beam Source for Epitaxial Growth

Development of an Ionized Cluster Beam Source for Epitaxial Growth PDF Author: Mark Jay Jarrett
Publisher:
ISBN:
Category :
Languages : en
Pages : 236

Book Description


Low Temperature Epitaxial Growth of Semiconductors

Low Temperature Epitaxial Growth of Semiconductors PDF Author: Takashi Hariu
Publisher: World Scientific
ISBN: 9789971508395
Category : Technology & Engineering
Languages : en
Pages : 356

Book Description
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.

Silicon Molecular Beam Epitaxy

Silicon Molecular Beam Epitaxy PDF Author: E. Kasper
Publisher: CRC Press
ISBN: 1351093525
Category : Technology & Engineering
Languages : en
Pages : 411

Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Ionized-Cluster Beam/Partially Ionized Beam Deposition of Electro- Optical and Nonlinear Optical Organic Materials and Device Development

Ionized-Cluster Beam/Partially Ionized Beam Deposition of Electro- Optical and Nonlinear Optical Organic Materials and Device Development PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 21

Book Description
Our multidisciplinary research efforts over the last few years have been focused on the preparation and characterization of high quality, thermally stable thin film that exhibit high nonlinear optical properties using vacuum vapor deposition and in-situ poling (ionized cluster beam/partially ionized beam (PIB) deposition) techniques. The project's primary accomplishments are the vapor deposition of oriented organic thin films and polymer-chromophore complexes, and the development of novel nonlinear optical materials systems, such as side-chain polymers and particle-polymer complexes. Highlights of the research are as follows: (1) Organic crystals called DAST with the highest known nonlinearity have been grown and characterized; (2) PIB deposited highly transparent MNA films on FM substrates demonstrate a large second harmonic generation (SHG) signal; (3) Vapor deposited chromophore-polymer composite thin films show large EO effect (several pm/V); (4) Seven synthetic diol and triol chromophores developed have been copolymerized into polyurethane cross-linked EO polymer; (5) Vapor deposited polyurethane based side-chain polymeric thin film demonstrate large EO effects with r33 = 5.6 pm/V; (6) Spin-coated BaTiO3/PMMA composite thin film show large electrooptical effect; (7) Two novel techniques, electrooptical characterization and subpicosecond optical rectification, have been implemented.

Materials Processing by Cluster Ion Beams

Materials Processing by Cluster Ion Beams PDF Author: Isao Yamada
Publisher: CRC Press
ISBN: 1498711766
Category : Science
Languages : en
Pages : 260

Book Description
Materials Processing by Cluster Ion Beams: History, Technology, and Applications discusses the contemporary physics, materials science, surface engineering issues, and nanotechnology capabilities of cluster beam processing. Written by the originator of the gas cluster ion beam (GCIB) concept, this book:Offers an overview of ion beam technologies, f