Author: Peter David TownsendPublisher:
ISBN:
Category : Science
Languages : en
Pages : 358
Book Description
Ion Implantation, Sputtering and Their Applications
Author: Peter David TownsendPublisher:
ISBN:
Category : Science
Languages : en
Pages : 358
Book Description
Ion Implantation and Synthesis of Materials
Author: Michael NastasiPublisher: Springer Science & Business Media
ISBN: 3540452982
Category : Science
Languages : en
Pages : 271
Book Description
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Ion-Solid Interactions
Author: Michael NastasiPublisher: Cambridge University Press
ISBN: 052137376X
Category : Science
Languages : en
Pages : 572
Book Description
Comprehensive guide to an important materials science technique for students and researchers.
Ion Beams in Materials Processing and Analysis
Author: Bernd SchmidtPublisher: Springer Science & Business Media
ISBN: 3211993568
Category : Technology & Engineering
Languages : en
Pages : 425
Book Description
A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
Advanced Applications of Ion Implantation
Author: Michael I. CurrentPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 280
Book Description
Biomaterials Fabrication and Processing Handbook
Author: Paul K. ChuPublisher: CRC Press
ISBN: 0849379741
Category : Medical
Languages : en
Pages : 720
Book Description
This volume focuses on a variety of production and processing aspects of the latest biomaterials. It discusses how scaffolds are used in tissue engineering and describes common implant materials, such as hard tissue, blood contacting, and soft tissue. The book also examines the important role nanotechnology plays in the preparation of drugs, protein delivery, tissue engineering, cardiovascular biomaterials, hard tissue replacements, biosensors, and bio-MEMS. With contributions from renowned international experts and extensive reference lists in each chapter, this book provides detailed, practical information to produce biomaterials and employ them in biomedicine.
Site Characterization and Aggregation of Implanted Atoms in Materials
Author: A. PerezPublisher: Springer Science & Business Media
ISBN: 1468410156
Category : Science
Languages : en
Pages : 518
Book Description
Explosive developments in microelectronics, interest in nuclear metallurgy, and widespread applications in surface science have all produced many advances in the field of ion implantation. The research activity has become so intensive and so broad that the field has become divided into many specialized subfields. An Advanced Study Institute, covering the basic and common phenomena of aggregation, seems opportune for initiating interested scientists and engineers into these various active subfields since aggregation usually follows ion implantation. As a consequence, Drs. Perez, Coussement, Marest, Cachard and I submitted such a pro posal to the Scientific Affairs Division of NATO, the approval of which resulted in the present volume. For the physicist studying nuclear hyperfine interactions, the consequences of aggregation of implanted atoms, even at low doses, need to be taken into account if the results are to be correctly interpreted. For materials scientists and device engineers, under standing aggregation mechanisms and methods of control is clearly essential in the tailoring of the end products.
Ion Implantation in Semiconductors and Other Materials
Author: Billy CrowderPublisher: Springer Science & Business Media
ISBN: 146842064X
Category : Science
Languages : en
Pages : 644
Book Description
During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.
Introduction to Focused Ion Beams
Author: Lucille A. GiannuzziPublisher: Springer Science & Business Media
ISBN: 038723313X
Category : Science
Languages : en
Pages : 362
Book Description
Introduction to Focused Ion Beams is geared towards techniques and applications. This is the only text that discusses and presents the theory directly related to applications and the only one that discusses the vast applications and techniques used in FIBs and dual platform instruments.
Author: