Ion Implantation Lattice Damage in Silicon and Gallium Arsenide PDF Download

Author: Wesley Harold Weisenberger
Publisher:
ISBN:
Category : Ion bombardment
Languages : en
Pages : 136

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Author: Samuel C. Ling
Publisher:
ISBN:
Category :
Languages : en
Pages : 15

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Radiation damage and low temperature (200 degrees-600 degrees C) annealing behavior of 120 keV silicon and selenium ion implants into gallium arsenide have been investigated by Rutherford Backscattering-Channeling and Transmission Electron Microscopy techniques. Lattice location studies of Si implants after high temperature annealing (850 degrees and 950 degrees C) have been conducted using Proton Induced X-Ray Emission method. (Author).

Author: Emanuele Rimini
Publisher: Springer Science & Business Media
ISBN: 1461522595
Category : Technology & Engineering
Languages : en
Pages : 400

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Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 14

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The residual damage in GaAs was measured by ion channeling following implantation of either 100 keV 3°Si at temperatures of 300K or 77K, or 360 keV 12°Sn at 300K. For room-temperature Si implants and fluences between 1 and 10 × 1014 Si/cm2, the amount of damage created was strongly dependent upon the ion current density, which was varied between 0.05 and 12 [mu]A/cm2. Two different stages of damage growth were identified by an abrupt increase in the damage growth rate as a function of fluence, and the threshold fluence for the onset of the second stage was found to be dependent on the dose rate. The dose rate effect on damage was substantially weaker for 12°Sn+ implants and was negligible for Si implants at 77K. The damage was found to be most sensitive to the average current density, demonstrating that the defects which are the precursors to the residual dose-rate dependent damage have active lifetimes of at least 3 × 10−4 s. The dose rate effect and its variation with ion mass and temperature are discussed in the context of homogeneous nucleation and growth of damage during ion irradiation.

Author: Alison Schary
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 654

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Author:
Publisher: Academic Press
ISBN: 0080864422
Category : Technology & Engineering
Languages : en
Pages : 321

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Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical and physico-chemical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Author: Susumu Namba
Publisher: Springer Science & Business Media
ISBN: 1468421514
Category : Science
Languages : en
Pages : 716

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The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.

Author: Billy Crowder
Publisher: Springer Science & Business Media
ISBN: 146842064X
Category : Science
Languages : en
Pages : 644

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During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.

Author: Fred Chernow
Publisher: Springer Science & Business Media
ISBN: 1461341965
Category : Science
Languages : en
Pages : 733

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The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976. Papers were delivered by scientists and engineers from 15 countries, and the attendees represented 19 countries. As has become the custom at these conferences, the sessions were intense with the coffee breaks and evenings given to informal meetings among the participants. It was a time to renew old friendships, begin new ones, exchange ideas, personally question authors of papers that appeared in the literature since the last conference and find out what was generally happening in Ion Implantation. In recent years it has beome more difficult to get funding to travel to such meetings. To assist the participating authors financial aid was solicited from industry and the Office of Naval Research. We are most grateful for their positive response to our requests. The success of the conference was in part due to their generous contributions. The Program Committee had the unhappy task of the reviewing of more than 170 abstracts. The result of their labors was well worth their effort. Much thanks goes to them for molding the conference into an accurate representation of activities in the field. Behind the scenes in Boulder, local arrangements were handled ably by Graeme Eldridge. The difficulty of this task cannot be overemphasized. Our thanks to him for a job well done.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Transmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEM - Ion Accelerator Facility at Argonne National Laboratory. The ion bombardments (50 keV Ar and Kr) and the microscopy have been carried out at temperatures ranging from 30 to 300°K. Ion fluences ranged from 2 x 1011 to 5 x 1013 ions cm−2. Direct-impact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30°K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250°K. Post-implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears. 14 refs., 3 figs., 1 tab.