Author: 廖柏詠Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Investigation of Reliability and Physical Mechanisms of Flexible AInGaZnO Thin Film Transistors for Advanced Display
Author: 廖柏詠Physical Mechanism of Bias Stability and Current-induced Thermal Effect on Reliability of InGaZnO Thin-Film Transistors for Advanced Displays
Author: Reliability and Physical Mechanisms of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors for Advanced Display
Author: Physical Mechanisms of the Self-Heating and Hot-Carrier Effects on Reliability of InGaZnO Thin Film Transistor for Advanced Displays
Author: 謝天宇Physical Mechanism of Structure-dependent Bias Stability and Illuminated Hot-carrier Effect on Reliability of InGaZnO Thin-Film Transistors for Advanced Displays
Author: Investigation on the Physical Mechanism and Reliability of Amorphous InGaZnO4 Thin Film Transistors Under Different Environment and Illumination
Author: 陳儀憲Electrical Analysis and Physical Mechanisms of A-InGaZnO Thin Film Transistors with Different Device Structures
Author: 吳昌蓓Development and Physical Mechanisms Establishment of Flexible Thin Film Transistors
Author: 陳柏瑋Investigation on Reliability & Electrical Analysis of A-Si:H Thin Film Transistor Used in Flexible Display
Author: 曹書瑋Post Processing Treatment of InGaZnO Thin Film Transistors for Improved Bias-illumination Stress Reliability
Author: Muhammad Ruhul HasinPublisher:
ISBN:
Category : Indium gallium zinc oxide
Languages : en
Pages : 65
Book Description
This thesis work mainly examined the stability and reliability issues of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors under bias-illumination stress. Amorphous hydrogenated silicon has been the dominating material used in thin film transistors as a channel layer. However with the advent of modern high performance display technologies, it is required to have devices with better current carrying capability and better reproducibility. This brings the idea of new material for channel layer of these devices. Researchers have tried poly silicon materials, organic materials and amorphous mixed oxide materials as a replacement to conventional amorphous silicon layer. Due to its low price and easy manufacturing process, amorphous mixed oxide thin film transistors have become a viable option to replace the conventional ones in order to achieve high performance display circuits. But with new materials emerging, comes the challenge of reliability and stability issues associated with it. Performance measurement under bias stress and bias-illumination stress have been reported previously. This work proposes novel post processing low temperature long time annealing in optimum ambient in order to annihilate or reduce the defects and vacancies associated with amorphous material which lead to the instability or even the failure of the devices. Thin film transistors of a-IGZO has been tested for standalone illumination stress and bias-illumination stress before and after annealing. HP 4155B semiconductor parameter analyzer has been used to stress the devices and measure the output characteristics and transfer characteristics of the devices. Extra attention has been given about the effect of forming gas annealing on a-IGZO thin film. a-IGZO thin film deposited on silicon substrate has been tested for resistivity, mobility and carrier concentration before and after annealing in various ambient. Elastic Recoil Detection has been performed on the films to measure the amount of hydrogen atoms present in the film. Moreover, the circuit parameters of the thin film transistors has been extracted to verify the physical phenomenon responsible for the instability and failure of the devices. Parameters like channel resistance, carrier mobility, power factor has been extracted and variation of these parameters has been observed before and after the stress.