Author: 賴豊文Publisher:
ISBN:
Category :
Languages : en
Pages : 96
Book Description
Investigation of Optical and Electrical Properties of Pure and Doped Zinc Oxide Films by RF Sputtering Method
Author: 賴豊文Structural and Electrical Properties of Radio Frequency Sputtered Fluorine Doped Zinc Oxide Films ...
Author: Adam S. BowenPublisher:
ISBN:
Category : Zinc oxide thin films
Languages : en
Pages : 140
Book Description
Deposits, by radio frequency magnetron sputtering disposition, thin films of fluorine doped zinc oxide onto polyethylene naphthalate and glass substrates at room temperature. Studies of the effects of post disposition annealing by argon and a gas mixture of argon and hydrogen on the structural and electrical properties of the films deposited on polyethylene naphthalate and glass.
Optical Thin Films and Structures
Author: Tsvetanka BabevaPublisher: MDPI
ISBN: 3036508929
Category : Science
Languages : en
Pages : 128
Book Description
The book is devoted to the design, application and characterization of thin films and structures, with special emphasis on optical applications. It comprises ten papers—five featured and five regular—authored by scientists all over the world. Diverse materials are studied and their possible applications are demonstrated and discussed—transparent conductive coatings and structures from ZnO doped with Al and Ga and Ti-doped SnO2, polymers and nanosized zeolite thin films for optical sensing, TiO2 with linear and nonlinear optical properties, organic diamagnetic materials, broadband optical coatings, CrWN glass molding coatings, and silicon on insulator waveguides.
Investigation for The Electrical and Ptical Properties of Antimony Doped ZnO Films Grown by RF Sputtering
Author: 游力蓁Zinc Oxide - A Material for Micro- and Optoelectronic Applications
Author: Norbert H. NickelPublisher: Springer Science & Business Media
ISBN: 140203475X
Category : Science
Languages : en
Pages : 245
Book Description
Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on “Zinc oxide as a material for micro- and optoelectronic applications”, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 – 40 meV and 60 – 70 meV.
Functional Oxide Based Thin-Film Materials
Author: Dong-Sing WuuPublisher: MDPI
ISBN: 3039288377
Category : Science
Languages : en
Pages : 160
Book Description
This Special Issue on Functional Oxide-Based Thin-Film Materials touches on the latest advancements in several aspects related to material science: the synthesis of novel oxide, photoluminescence characteristics, photocatalytic ability, energy storage, light emitter studies, low-emissivity glass coatings, and investigations of both nanostructure and thin-film properties. It represents an amalgamation of specialists working with device applications and shedding light on the properties and behavior of thin-film oxides (e.g., GaOx, Ga2O3, HfO2, LiNbO3, and doped ZnO, among numerous others). The papers cover many aspects of thin-film science and technology, from thin film to nanostructure and from material properties to optoelectronic applications, thus reflecting the many interests of the community of scientists active in the field.
Fabrication of Zinc Nitride Thin Films Using RF Magnetron Sputtering Deposition for Optoelectronic Applications
Author: Ting WenPublisher:
ISBN:
Category : Optoelectronics
Languages : en
Pages : 122
Book Description
Zinc nitride thin films possess a small optical band gap with direct transition, low resistivity, high mobility and carrier concentration. Therefore, it may be suitable as an optoelectronic material for infrared sensors, smart windows and energy conversion devices. The objective of this work is to grow zinc nitride thin films using RF magnetron sputtering, understand its mechanical, optical, and electrical properties, and investigate its performance as light sensing devices. Synthesis and characterization of zinc nitride thin films has been investigated in this work. An RF magnetron sputtering deposition was employed to synthesize zinc nitride thin films using pure metal zinc target in either N2-Ar or N2-Ar-H2 mixtures. The microstructural, optical and electrical characterizations of the representative films were investigated with stylus profilometry, XRD, AFM, SEM, TEM, UV-VIS-NIR double beam spectrometry, and Hall effect measurement. The photoresponse of the zinc nitride photoconductors was also studied under the irradiation of white light and NIR light. The as-deposited zinc nitride thin films were relatively soft and densely packed with smooth surface. It possesses a narrow optical band gap in the NIR range with direct transition. The zinc nitride showed n-type conductivity with low resistivity and high carrier concentration. To study the RF discharge power effect, the zinc nitride thin films were synthesized at different discharge powers densities. With discharge power density increasing, the film deposition rate increased, and the zinc nitride films acquired better crystalline structure, smaller optical band gap and less oxygen contaminations. After thermal annealing at moderate temperatures in either air or O2, the annealed zinc nitride thin films were photoconductive under irradiation of both NIR light and white light. The largest photoresponse and fastest response times were measured at the room temperature for the zinc nitride thin films annealed at 300 degree in the air. Hydrogen inclusion can modify the electrical and optical properties of crystalline semiconductor films by introducing impurity donor states. The ZnNx:H films deposited in N2-Ar-H2 mixture acquired less oxygen contamination and higher relative nitrogen atom concentration than the ZnNx films deposited in N2-Ar mixture. The as-deposited ZnNx:H films showed a clear photonic behavior under white light irradiation, and the annealed ZnNx:H films exhibited a pronounced change in resistance under both white light and NIR light irradiation comparing to the annealed ZnNx films. This was the first time to report photoresponse of zinc nitride thin films fabricated by reactive sputtering method. The photoconductivity was gradually improved by optimization of deposition conditions, annealing conditions and film compositions.
TMS 2015 144th Annual Meeting and Exhibition
Author: The Minerals, Metals & Materials Society (TMS)Publisher: John Wiley & Sons
ISBN: 1119093481
Category : Technology & Engineering
Languages : en
Pages : 1584
Book Description
The TMS 2015 Annual Meeting Supplemental Proceedings is a collection of papers from the TMS 2015 Annual Meeting & Exhibition, held March 15-19 in Orlando, Florida, USA. The papers in this volume represent 33 symposia from the meeting. This volume, along with the other proceedings volumes published for the meeting, and archival journals, such as Metallurgical and Materials Transactions and Journal of Electronic Materials, represents the available written record of the 73 symposia held at TMS2015. This proceedings volume contains both edited and unedited papers; the unedited papers have not necessarily been reviewed by the symposium organizers and are presented "as is." The opinions and statements expressed within the papers are those of the individual authors only, and no confirmations or endorsements are intended or implied.
Electrical & Electronics Abstracts
Author: Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304
Book Description
Dielectric Materials and Applications
Author: Mohammed Essaid AchourPublisher: Materials Research Forum LLC
ISBN: 1945291192
Category : Technology & Engineering
Languages : en
Pages : 335
Book Description
The First International Symposium on Dielectric Materials and Applications (ISyDMA’2016) was held in Kenitra (4 May, 2016) and in Rabat (May 5-6, 2016), Morocco. ISyDMA’2016 provided an international forum for reporting the most recent developments in Advanced Dielectric Materials and applications. The goal of this collection of peer reviewed papers is to provide researchers and scientists from all over the world with recent developments in dielectric materials and their innovative applications. The book will be useful for materials scientists, physicists, chemists, biologists, and electrical engineers engaged in fundamental and applied research or technical investigations of such materials.