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Author: Publisher: ISBN: Category : Languages : en Pages : 79
Book Description
Over the three-year course of this program, the low-temperature-grown (LTG) GaAs and AlGaAs have been incorporated as the gate insulator or surface passivation in a variety of field-effect-transistors (FETs). The LTG GaAs used as the surface passivation layer in a metal-semiconductor FET (MESFET) with a novel overlapping gate structure increased the breakdown voltage by two folds compared to a regular MESFET. The LTG GaAs passivation also greatly improved the surface quality of the device, resulting in a reduced low-frequency noise and minimal frequency dispersions of the transconductance and the output resistance. The mechanisms for the improved breakdown voltage have been studied by computer simulation. Self-aligned GaAs metal- insulator-semiconductor FETs (MISFETs) having an LTG GaAs gate insulator--have been developed. The performance of the MISFET was improved significantly by the ion-implanted high-doping-concentration source and drain regions. A variety of the LTG GaAs and LTG AlGaAs with different Al mole fractions, that can used as the gate insulator, have been grown to study the effects of the growth temperature and the thickness on the properties of the MISFETs. jg.
Author: Publisher: ISBN: Category : Languages : en Pages : 79
Book Description
Over the three-year course of this program, the low-temperature-grown (LTG) GaAs and AlGaAs have been incorporated as the gate insulator or surface passivation in a variety of field-effect-transistors (FETs). The LTG GaAs used as the surface passivation layer in a metal-semiconductor FET (MESFET) with a novel overlapping gate structure increased the breakdown voltage by two folds compared to a regular MESFET. The LTG GaAs passivation also greatly improved the surface quality of the device, resulting in a reduced low-frequency noise and minimal frequency dispersions of the transconductance and the output resistance. The mechanisms for the improved breakdown voltage have been studied by computer simulation. Self-aligned GaAs metal- insulator-semiconductor FETs (MISFETs) having an LTG GaAs gate insulator--have been developed. The performance of the MISFET was improved significantly by the ion-implanted high-doping-concentration source and drain regions. A variety of the LTG GaAs and LTG AlGaAs with different Al mole fractions, that can used as the gate insulator, have been grown to study the effects of the growth temperature and the thickness on the properties of the MISFETs. jg.
Author: Mohamed Henini Publisher: Elsevier ISBN: 0128121378 Category : Science Languages : en Pages : 790
Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author: John Orton Publisher: OUP Oxford ISBN: 0191061166 Category : Science Languages : en Pages : 529
Book Description
The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Author: T. B. Norris Publisher: ISBN: Category : Languages : en Pages : 4
Book Description
We have applied time-resolved absorption spectroscopy to study the near-band-edge carrier dynamics of low temperature-MBE-grown GaAs, in order to directly observe the carrier relaxation and lifetime for this material.
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Author: Mohamed Henini
Author: Saroja Prasanthi Edirisinghe
Author: David Emory Bliss
Author: John Orton
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Author: Ri-an Zhao
Author: T. B. Norris
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