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Author: P. Gehlen Publisher: Springer Science & Business Media ISBN: 1468419927 Category : Science Languages : en Pages : 778
Book Description
This book is the proceedings of the Sixth Battelle Colloquium on the Science of Materials. The Colloquium was devoted to a new field of materials science in which computers are used to conduct the experiments. Although the computer methods used have reached a high degree of sophistication, the underlying principles are relatively straightforward and well understood. The interatomic force laws - a vital input into these computations - however are less well understood. Interatomic Potentials and Simulation of Lattice Defects primarily discusses the validity of a variety of force laws - either from a theoretical point of view or through comparisons of experimental results and those obtained with computer simulation. The format used in previous Battelle Institute Colloquia is followed. The opening session was aimed at providing an overall view of the field of interatomic forces and defect calculations by major contributors. It was led by Dr. G. H. Vineyard, one of the pioneers in this field. The second day was devoted to research papers on theoretical and experimental aspects of interatomic forces. The remaining days were devoted to research papers on computer simulation of the four types of defects: point defects, line defects, surface defects, and volume defects.
Author: Publisher: ISBN: Category : Languages : en Pages : 411
Book Description
With the advent of large, high-speed computers, many computer simulation studies on defects in materials have been performed during the last two decades. The 1971 Battelle colloquium on 'Interatomic Potentials and Simulation of Lattice Defects' held in Seattle, Washington, provided a successful open forum for discussions of interatomic forces and their use in studies in crystalline defects through computer simulation. These studies have yielded many new insights into materials properties. Although the 1976 International Conference on 'Computer Simulation for Materials Applications' at the National Bureau of Standards, Washington, D.C., covered some of these results as short papers, it is certainly time to provide another open forum for in-depth reviews and discussions of new findings and progress in this exciting field.
Author: P. Gehlen Publisher: Springer Science & Business Media ISBN: 1468419927 Category : Science Languages : en Pages : 778
Book Description
This book is the proceedings of the Sixth Battelle Colloquium on the Science of Materials. The Colloquium was devoted to a new field of materials science in which computers are used to conduct the experiments. Although the computer methods used have reached a high degree of sophistication, the underlying principles are relatively straightforward and well understood. The interatomic force laws - a vital input into these computations - however are less well understood. Interatomic Potentials and Simulation of Lattice Defects primarily discusses the validity of a variety of force laws - either from a theoretical point of view or through comparisons of experimental results and those obtained with computer simulation. The format used in previous Battelle Institute Colloquia is followed. The opening session was aimed at providing an overall view of the field of interatomic forces and defect calculations by major contributors. It was led by Dr. G. H. Vineyard, one of the pioneers in this field. The second day was devoted to research papers on theoretical and experimental aspects of interatomic forces. The remaining days were devoted to research papers on computer simulation of the four types of defects: point defects, line defects, surface defects, and volume defects.
Author: Jong K. Lee Publisher: ISBN: Category : Languages : en Pages : 401
Book Description
With the advent of large, high-speed computers, many computer simulation studies on defects in materials have been performed during the last two decades. The 1971 Battelle colloquium on 'Interatomic Potentials and Simulation of Lattice Defects' held in Seattle, Washington, provided a successful open forum for discussions of interatomic forces and their use in studies in crystalline defects through computer simulation. These studies have yielded many new insights into materials properties. Although the 1976 International Conference on 'Computer Simulation for Materials Applications' at the National Bureau of Standards, Washington, D.C., covered some of these results as short papers, it is certainly time to provide another open forum for in-depth reviews and discussions of new findings and progress in this exciting field.
Author: Thomas D Swinburne Publisher: Springer ISBN: 3319200194 Category : Science Languages : en Pages : 110
Book Description
This thesis is concerned with establishing a rigorous, modern theory of the stochastic and dissipative forces on crystal defects, which remain poorly understood despite their importance in any temperature dependent micro-structural process such as the ductile to brittle transition or irradiation damage. The author first uses novel molecular dynamics simulations to parameterise an efficient, stochastic and discrete dislocation model that allows access to experimental time and length scales. Simulated trajectories are in excellent agreement with experiment. The author also applies modern methods of multiscale analysis to extract novel bounds on the transport properties of these many body systems. Despite their successes in coarse graining, existing theories are found unable to explain stochastic defect dynamics. To resolve this, the author defines crystal defects through projection operators, without any recourse to elasticity. By rigorous dimensional reduction, explicit analytical forms are derived for the stochastic forces acting on crystal defects, allowing new quantitative insight into the role of thermal fluctuations in crystal plasticity.
Author: Tsang-Tse Fang Publisher: Elsevier ISBN: 0128142693 Category : Technology & Engineering Languages : en Pages : 233
Book Description
Elements of Structures and Defects of Crystalline Materials has been written to cover not only the fundamental principles behind structures and defects, but also to provide deep insights into understanding the relationships of properties, defect chemistry and processing of the concerned materials. Part One deals with structures, while Part Two covers defects. Since the knowledge of the electron configuration of elements is necessary for understanding the nature of chemical bonding, it is discussed in the opening chapter. Chapter Two then describes the bonding formation within the crystal structures of varied materials, with Chapter Three delving into how a material’s structure is formed. In view of the importance of the effects of the structure distortion on the material properties due to the fields, the related topics have been included in section 3.4. Moreover, several materials still under intensive investigation have been illustrated to provide deep insights into understanding the effects of the relationships of processing, structures and defects on the material properties. The defects of materials are explored in Part II. Chapter 4 deals with the point defects of metal and ceramics. Chapter 5 covers the fundamentals of the characteristics of dislocations, wherein physics and the atomic mechanics of several issues have been described in detail. In view of the significant influence of the morphologies including size, shape and distribution of grains, phases on the microstructure evolution, and, in turn, the properties of materials, the final chapter focuses on the fundamentals of interface energies, including single phase (grain) boundary and interphase boundary. Discusses the relationship between properties, defect chemistry and the processing of materials Presents coverage of the fundamental principles behind structures and defects Includes information on two-dimensional and three-dimensional imperfections in solids
Author: P. Gehlen
Author: Jong K. Lee
Author: 
Author: P. Gehlen
Author: Battelle Institute Materials Science Colloquia Staff
Author: Wilhelmus Florimundus Werenfridusi Maria Van Heugten
Author: Wilhelmus Florimundus Werenfridus Maria van Heugten
Author: Jong K. Lee
Author: Pierre C. Gehlen
Author: Thomas D Swinburne
Author: Tsang-Tse Fang