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Author: Munir H. Nayfeh Publisher: Elsevier ISBN: 044318674X Category : Technology & Engineering Languages : en Pages : 568
Book Description
Integrated Silicon-Metal Systems at the Nanoscale: Applications in Photonics, Quantum Computing, Networking, and Internet is a comprehensive guide to the interaction, materials and functional integration at the nanoscale of the silicon-metal binary system and a variety of emerging and next-generation advanced device applications, from energy and electronics, to sensing, quantum computing and quantum internet networks. The book guides the readers through advanced techniques and etching processes, combining underlying principles, materials science, design, and operation of metal-Si nanodevices. Each chapter focuses on a specific use of integrated metal-silicon nanostructures, including storage and resistive next-generation nano memory and transistors, photo and molecular sensing, harvest and storage device electrodes, phosphor light converters, and hydrogen fuel cells, as well as future application areas, such as spin transistors, quantum computing, hybrid quantum devices, and quantum engineering, networking, and internet. Provides detailed coverage of materials, design and operation of metal-Si nanodevices Offers a step-by-step approach, supported by principles, methods, illustrations and equations Explores a range of cutting-edge emerging applications across electronics, sensing and quantum computing
Author: Munir H. Nayfeh Publisher: Elsevier ISBN: 044318674X Category : Technology & Engineering Languages : en Pages : 568
Book Description
Integrated Silicon-Metal Systems at the Nanoscale: Applications in Photonics, Quantum Computing, Networking, and Internet is a comprehensive guide to the interaction, materials and functional integration at the nanoscale of the silicon-metal binary system and a variety of emerging and next-generation advanced device applications, from energy and electronics, to sensing, quantum computing and quantum internet networks. The book guides the readers through advanced techniques and etching processes, combining underlying principles, materials science, design, and operation of metal-Si nanodevices. Each chapter focuses on a specific use of integrated metal-silicon nanostructures, including storage and resistive next-generation nano memory and transistors, photo and molecular sensing, harvest and storage device electrodes, phosphor light converters, and hydrogen fuel cells, as well as future application areas, such as spin transistors, quantum computing, hybrid quantum devices, and quantum engineering, networking, and internet. Provides detailed coverage of materials, design and operation of metal-Si nanodevices Offers a step-by-step approach, supported by principles, methods, illustrations and equations Explores a range of cutting-edge emerging applications across electronics, sensing and quantum computing
Author: Raul Marcel Lema Galindo Publisher: ISBN: Category : Languages : en Pages : 0
Book Description
Silicon device manufacturing, at both the micro and nanoscales, is largely performed using plasma etching techniques such as Reactive Ion Etching. Deep Reactive Ion Etching (DRIE) can be used to create high-aspect ratio nanostructures in silicon. The DRIE process suffers from low throughput, only one wafer can be processed at a time; high cost, the necessary tools and facilities for implementation are expensive; and surface defects such as sidewall taper and scalloping as a consequence of the cycling process required for high-aspect-ratio manufacturing. A potential solution to these issues consists of implementing wet-etching techniques, which do not require expensive equipment and can be implemented at a batch scale. Metal Assisted Chemical Etch is a wet-etch process that uses a metal catalyst to mediate silicon oxidation and removal in a diffusion-based process. This process has been demonstrated to work for both micro and nanoscale feature manufacturing on silicon substrates. To date, however, a single study aimed at identifying experimental conditions for successful multi-scale (integrated micro- and nanoscale) manufacturing is lacking in the literature. This mixed micro-nanoscale etching process (IMN-MACE) can enable a wide variety of applications including, for example, development of point-of-care medical diagnostic devices which rely on micro- and nano-fluidic sample processing, a growing field in the area of preventive medicine. This work developed multi-scale MACE by a systematic experimental exploration of the process space. A total of 54 experiments were performed to study the effects of the following process parameters: (i) surface silicon dioxide, (ii) metal catalyst stack, (iii) etchant solution concentration, and (iv) pre-etch sample preparation. Of these 54 experiments, 18 experiments were based on exploring nanopatterning of 100nm pillars, and the remaining 36 explored the fabrication of micropillars with a diameter between 10μm and 50μm in 5μm increments. It was determined that a single catalyst stack consisting of ~3nm Ag underneath a ~15nm Au metal layer can be used to etch high quality features at both the micro and nanoscales on a silicon substrate pre-treated with hydrogen fluoride to remove the native oxide layer from the surface. Future steps for micro-nano scale integration were also proposed
Author: Shunri Oda Publisher: CRC Press ISBN: 1482228688 Category : Technology & Engineering Languages : en Pages : 288
Book Description
Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Author: Yosi Shacham-Diamand Publisher: Springer Science & Business Media ISBN: 0387958681 Category : Science Languages : en Pages : 545
Book Description
In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.
Author: Munir H. Nayfeh Publisher: Elsevier ISBN: 0323480586 Category : Science Languages : en Pages : 604
Book Description
Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines: Current and Future Trends addresses current and future trends in the application and commercialization of nanosilicon. The book presents current, innovative and prospective applications and products based on nanosilicon and their binary system in the fields of energy harvesting and storage, lighting (solar cells and nano-capacitor and fuel cell devices and nanoLEDs), electronics (nanotransistors and nanomemory, quantum computing, photodetectors for space applications; biomedicine (substance detection, plasmonic treatment of disease, skin and hair care, implantable glucose sensor, capsules for drug delivery and underground water and oil exploration), and art (glass and pottery). Moreover, the book includes material on the use of advanced laser and proximal probes for imaging and manipulation of nanoparticles and atoms. In addition, coverage is given to carbon and how it contrasts and integrates with silicon with additional related applications. This is a valuable resource to all those seeking to learn more about the commercialization of nanosilicon, and to researchers wanting to learn more about emerging nanosilicon applications. Features a variety of designs and operation of nano-devices, helping engineers to make the best use of nanosilicon Contains underlying principles of how nanomaterials work and the variety of applications they provide, giving those new to nanosilicon a fundamental understanding Assesses the viability of various nanoslicon devices for mass production and commercialization, thereby providing an important source of information for engineers
Author: John A. Rogers Publisher: John Wiley & Sons ISBN: 3527690999 Category : Technology & Engineering Languages : en Pages : 365
Book Description
Edited by the leaders in the fi eld, with chapters from highly renowned international researchers, this is the fi rst coherent overview of the latest in silicon nanomembrane research. As such, it focuses on the fundamental and applied aspects of silicon nanomembranes, ranging from synthesis and manipulation to manufacturing, device integration and system level applications, including uses in bio-integrated electronics, three-dimensional integrated photonics, solar cells, and transient electronics. The first part describes in detail the fundamental physics and materials science involved, as well as synthetic approaches and assembly and manufacturing strategies, while the second covers the wide range of device applications and system level demonstrators already achieved, with examples taken from electronics and photonics and from biomedicine and energy.
Author: Anatoli Korkin Publisher: Springer ISBN: 3319186337 Category : Technology & Engineering Languages : en Pages : 291
Book Description
This book presents research dedicated to solving scientific and technological problems in many areas of electronics, photonics and renewable energy. Progress in information and renewable energy technologies requires miniaturization of devices and reduction of costs, energy and material consumption. The latest generation of electronic devices is now approaching nanometer scale dimensions; new materials are being introduced into electronics manufacturing at an unprecedented rate; and alternative technologies to mainstream CMOS are evolving. The low cost of natural energy sources have created economic barriers to the development of alternative and more efficient solar energy systems, fuel cells and batteries. Nanotechnology is widely accepted as a source of potential solutions in securing future progress for information and energy technologies. Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy features chapters that cover the following areas: atomic scale materials design, bio- and molecular electronics, high frequency electronics, fabrication of nanodevices, magnetic materials and spintronics, materials and processes for integrated and subwave optoelectronics, nanoCMOS, new materials for FETs and other devices, nanoelectronics system architecture, nano optics and lasers, non-silicon materials and devices, chemical and biosensors,quantum effects in devices, nano science and technology applications in the development of novel solar energy devices, and fuel cells and batteries.
Author: Simon Deleonibus Publisher: CRC Press ISBN: 1351721771 Category : Science Languages : en Pages : 256
Book Description
Since its invention, the integrated circuit has necessitated new process modules and numerous architectural changes to improve application performances, power consumption, and cost reduction. Silicon CMOS is now well established to offer the integration of several tens of billions of devices on a chip or in a system. At present, there are important challenges in the introduction of heterogeneous co-integration of materials and devices with the silicon CMOS 2D- and 3D-based platforms. New fabrication techniques allowing strong energy and variability efficiency come in as possible players to improve the various figures of merit of fabrication technology. Integrated Nanodevice and Nanosystem Fabrication: Breakthroughs and Alternatives is the second volume in the Pan Stanford Series on Intelligent Nanosystems. The book contains 8 chapters and is divided into two parts, the first of which reports breakthrough materials and techniques such as single ion implantation in silicon and diamond, graphene and 2D materials, nanofabrication using scanning probe microscopes, while the second tackles the scaling and architectural aspects of silicon devices through HiK scaling for nanoCMOS, nanoscale epitaxial growth of group IV semiconductors, design for variability co-optimization in SOI FinFETs, and nanowires for CMOS and diversifications.
Author: Munir H. Nayfeh
Author: Munir H. Nayfeh
Author: Raul Marcel Lema Galindo
Author: Shunri Oda
Author: Yosi Shacham-Diamand
Author: Munir H. Nayfeh
Author: John A. Rogers
Author: Anatoli Korkin
Author: Simon Deleonibus
Author: Yi-Chia Chou
Author: Rosemary P. Beatty