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Author: Reet Chaudhuri Publisher: Springer Nature ISBN: 3031171993 Category : Technology & Engineering Languages : en Pages : 266
Book Description
This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.
Author: Reet Chaudhuri Publisher: Springer Nature ISBN: 3031171993 Category : Technology & Engineering Languages : en Pages : 266
Book Description
This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.
Author: Masayoshi Esashi Publisher: John Wiley & Sons ISBN: 3527823255 Category : Technology & Engineering Languages : en Pages : 528
Book Description
Explore heterogeneous circuit integration and the packaging needed for practical applications of microsystems MEMS and system integration are important building blocks for the “More-Than-Moore” paradigm described in the International Technology Roadmap for Semiconductors. And, in 3D and Circuit Integration of MEMS, distinguished editor Dr. Masayoshi Esashi delivers a comprehensive and systematic exploration of the technologies for microsystem packaging and heterogeneous integration. The book focuses on the silicon MEMS that have been used extensively and the technologies surrounding system integration. You’ll learn about topics as varied as bulk micromachining, surface micromachining, CMOS-MEMS, wafer interconnection, wafer bonding, and sealing. Highly relevant for researchers involved in microsystem technologies, the book is also ideal for anyone working in the microsystems industry. It demonstrates the key technologies that will assist researchers and professionals deal with current and future application bottlenecks. Readers will also benefit from the inclusion of: A thorough introduction to enhanced bulk micromachining on MIS process, including pressure sensor fabrication and the extension of MIS process for various advanced MEMS devices An exploration of epitaxial poly Si surface micromachining, including process condition of epi-poly Si, and MEMS devices using epi-poly Si Practical discussions of Poly SiGe surface micromachining, including SiGe deposition and LP CVD polycrystalline SiGe A concise treatment of heterogeneously integrated aluminum nitride MEMS resonators and filters Perfect for materials scientists, electronics engineers, and electrical and mechanical engineers, 3D and Circuit Integration of MEMS will also earn a place in the libraries of semiconductor physicists seeking a one-stop reference for circuit integration and the practical application of microsystems.
Author: Patrick Fay Publisher: Springer ISBN: 3030202089 Category : Technology & Engineering Languages : en Pages : 308
Book Description
This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.
Author: M Razeghi Publisher: Elsevier ISBN: 9780080444260 Category : Science Languages : en Pages : 602
Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author: Hei Kam Publisher: Springer ISBN: 1493921282 Category : Technology & Engineering Languages : en Pages : 190
Book Description
This volume describes the design of relay-based circuit systems from device fabrication to circuit micro-architectures. This book is ideal for both device engineers as well as circuit system designers, and highlights the importance of co-design across design hierarchies when trying to optimize system performance (in this case, energy-efficiency). The book will also appeal to researchers and engineers focused on semiconductor, integrated circuits, and energy efficient electronics.
Author: Marcel Van de Voorde Publisher: John Wiley & Sons ISBN: 3527679227 Category : Technology & Engineering Languages : en Pages : 756
Book Description
Controlling the properties of materials by modifying their composition and by manipulating the arrangement of atoms and molecules is a dream that can be achieved by nanotechnology. As one of the fastest developing and innovative -- as well as well-funded -- fields in science, nanotechnology has already significantly changed the research landscape in chemistry, materials science, and physics, with numerous applications in consumer products, such as sunscreens and water-repellent clothes. It is also thanks to this multidisciplinary field that flat panel displays, highly efficient solar cells, and new biological imaging techniques have become reality. This second, enlarged edition has been fully updated to address the rapid progress made within this field in recent years. Internationally recognized experts provide comprehensive, first-hand information, resulting in an overview of the entire nano-micro world. In so doing, they cover aspects of funding and commercialization, the manufacture and future applications of nanomaterials, the fundamentals of nanostructures leading to macroscale objects as well as the ongoing miniaturization toward the nanoscale domain. Along the way, the authors explain the effects occurring at the nanoscale and the nanotechnological characterization techniques. An additional topic on the role of nanotechnology in energy and mobility covers the challenge of developing materials and devices, such as electrodes and membrane materials for fuel cells and catalysts for sustainable transportation. Also new to this edition are the latest figures for funding, investments, and commercialization prospects, as well as recent research programs and organizations.
Author: Filippo Giannazzo Publisher: MDPI ISBN: 3038976067 Category : Science Languages : en Pages : 265
Book Description
This book is a printed edition of the Special Issue "Integration of 2D Materials for Electronics Applications" that was published in Crystals
Author: Edward C. Shaffer Publisher: Materials Research Forum LLC ISBN: 1945291796 Category : Technology & Engineering Languages : en Pages : 728
Book Description
This compendium reports fundamental science and engineering advances of the US Army Research Labratory (ARL) within the area of Energy and Power technologies. Although, in general, ARL's Materials Research encompasses a broad range of materials technologies (e.g.: Photonics, Electronics, Biological and Bio-inspired Materials, Structural Materials, High Strain and Ballistic Materials, and Manufacturing Science), this publication specifically addresses selected energy and power material related work at ARL. While this work includes electrochemical energy storage (batteries and capacitors) and electrochemical energy conversion (fuel cells, photoelectrochemistry, and photochemistry), special emphasis is given on electrochemical energy storage: • Micro Electro-Mechanical Systems (MEMS): Power density, efficiency, and robustness of motors, generators, and actuators while also reducing their life cycle costs. • Energy Storage: Electrical and electrochemical energy storage devices to decrease device size, weight, and cost as well as increase their capabilities in extreme temperatures and operating conditions. • Power Control and Distribution: Tactical, deployable power systems using conventional fuels, alternative fuels, and energy harvested from renewable/ambient sources. • Power Generation/Energy Conversion: Smart energy networks for platforms, forward operating bases, and facilities using modeling and simulation tools as well as new, greater capability and efficiency components. • Thermal Transport and Control: Heat and higher power density systems, advanced components, system modeling, and adaptive or hybrid-cycle technologies. Keywords: Electrochemical Energy Storage, Batteries, Capacitors, Electrochemical Energy Conversion, Fuel Cells, Photoelectrochemistry, Photochemistry, High Voltage Electrolytes, Li-ion Batteries, Li-ion Chemistry, Lithium–Sulphur Batteries, Nuclear Metastables, Pyroelectric Energy Conversion, Charged Quantum Dots, High-Efficiency Photovoltaics, IR Sensing, GaN Power Schottky Diodes, Threshold-Voltage Instability, Reliability Testing, SiC MOSFETs, Power Electronics Packaging, High Voltage 4H-SiC GTOs, Silicon Carbide, Avalanche Breakdown Diode, SiC PiN Diodes, Thyristor Protection, Compact DC-DC Battery Chargers
Author: S. A. Ringel Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 338
Book Description
This book contains the proceedings of two symposia - 'Integration of Dissimilar Materials in Micro- and Optoelectronics' and 'III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications'. The publication stems from the desire to achieve new levels of device functionality and higher levels of performance via integration of devices based on dissimilar semiconductors, where the constraint of lattice-matching on the breadth of attainable devices can be reduced. It covers fundamental topics germane to integration of a wide range of dissimilar materials spanning wide-bandgap III-V nitrides, III-V/Si integration, II-VI and II-VI/III-V compounds, heterovalent structures, oxides, photonic bandgap structures and others. Topics such as compliancy, dislocation control, selective area growth, bonding methodologies, etc. are featured. It also addresses processing issues in the manufacturing of III-V and Si-based heterostructures for commercial products. Here, the success enjoyed by silicon germanium technology is contrasted by the promise of silicon-carbon alloys which have opportunities and challenges for the new generation of process developers.
Author: United States. Congress Publisher: ISBN: Category : Law Languages : en Pages : 1618
Book Description
The Congressional Record is the official record of the proceedings and debates of the United States Congress. It is published daily when Congress is in session. The Congressional Record began publication in 1873. Debates for sessions prior to 1873 are recorded in The Debates and Proceedings in the Congress of the United States (1789-1824), the Register of Debates in Congress (1824-1837), and the Congressional Globe (1833-1873)
Author: Reet Chaudhuri
Author: Reet Chaudhuri
Author: Masayoshi Esashi
Author: Patrick Fay
Author: M Razeghi
Author: Hei Kam
Author: Marcel Van de Voorde
Author: Filippo Giannazzo
Author: Edward C. Shaffer
Author: S. A. Ringel
Author: United States. Congress