Influence of Impurity-Decorated Stacking Faults on the Transient Response of Metal Oxide Semiconductor Capacitors PDF Download

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Influence of Impurity-Decorated Stacking Faults on the Transient Response of Metal Oxide Semiconductor Capacitors

Influence of Impurity-Decorated Stacking Faults on the Transient Response of Metal Oxide Semiconductor Capacitors PDF Author: Y. Ichida
Publisher:
ISBN:
Category : Electrical activity
Languages : en
Pages : 12

Book Description
The gettering effect of phosphorus diffusion to the back surface of a silicon wafer on oxidation-induced stacking faults has been studied by evaluating the generation lifetime from the transient response of metal oxide semiconductor (MOS) capacitors. The generation lifetime of wafers subjected to postoxidation phosphorus diffusion gettering is not remarkably decreased by the presence of stacking faults. On the other hand, the generation lifetime of waters subjected to preoxidation gettering is decreased by two orders of magnitude because of the presence of stacking faults. The result is explained by impurity precipitation to Frank partial dislocations bounding stacking faults.
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