INFLUENCE OF DEFECTS INDUCED BY LOW-ENERGY PROTONS ON DIFFUSION LENGTH OF MINORITY CARRIERS IN P-TYPE SILICON. PDF Download
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Author: G. M. Grigoreva Publisher: ISBN: Category : Languages : en Pages : 9
Book Description
The authors describe the results of investigations into the effect of irradiation by protons with energies E equals 1-6 MeV on electron diffusion length in p-type silicons. Two types of silicon were investigated: silicon obtained by melt extrusion and doped with boron at a given concentration, and noncrucible, vacuum-grown silicon doped with aluminum in a given concentration. Analysis of the spectral characteristics of n-p-structures revealed variations in the diffusion length of minority current carriers in p-type silicon due to defects induced by proton bombardment. The anomalous results for electron diffusion length after irradiation by 1 and 2 MeV protons is attributed to the diffusion length measurement method. Discrepancy between experimental and theoretical curves for electron diffusion length changes following irradiation by protons with energies E equals 4-6 MeV is attributed to defect annealing. (Author).
Author: G. M. Grigoreva Publisher: ISBN: Category : Languages : en Pages : 9
Book Description
The authors describe the results of investigations into the effect of irradiation by protons with energies E equals 1-6 MeV on electron diffusion length in p-type silicons. Two types of silicon were investigated: silicon obtained by melt extrusion and doped with boron at a given concentration, and noncrucible, vacuum-grown silicon doped with aluminum in a given concentration. Analysis of the spectral characteristics of n-p-structures revealed variations in the diffusion length of minority current carriers in p-type silicon due to defects induced by proton bombardment. The anomalous results for electron diffusion length after irradiation by 1 and 2 MeV protons is attributed to the diffusion length measurement method. Discrepancy between experimental and theoretical curves for electron diffusion length changes following irradiation by protons with energies E equals 4-6 MeV is attributed to defect annealing. (Author).
Author: Wiley Publisher: John Wiley & Sons ISBN: 111860590X Category : Technology & Engineering Languages : en Pages : 340
Book Description
The 2013 Materials Science eBook Sampler includes select material from seven Materials Science titles. Titles are from a number of Wiley imprints including Wiley, Wiley-VCH, Wiley-American Ceramic Society, Wiley-Scrivener and Wiley-The Minerals, Metals and Materials Society. The material that is included for each selection is the book’s full Table of Contents as well as a sample chapter. If you would like to read more from these books, you can purchase the full book or e-book at your favorite online retailer.
Author: Sergio Pizzini Publisher: John Wiley & Sons ISBN: 1118312163 Category : Technology & Engineering Languages : en Pages : 412
Book Description
Today, the silicon feedstock for photovoltaic cells comes from processes which were originally developed for the microelectronic industry. It covers almost 90% of the photovoltaic market, with mass production volume at least one order of magnitude larger than those devoted to microelectronics. However, it is hard to imagine that this kind of feedstock (extremely pure but heavily penalized by its high energy cost) could remain the only source of silicon for a photovoltaic market which is in continuous expansion, and which has a cumulative growth rate in excess of 30% in the last few years. Even though reports suggest that the silicon share will slowly decrease in the next twenty years, finding a way to manufacture a specific solar grade feedstock in large quantities, at a low cost while maintaining the quality needed, still remains a crucial issue. Thin film and quantum confinement-based silicon cells might be a complementary solution. Advanced Silicon Materials for Photovoltaic Applications has been designed to describe the full potentialities of silicon as a multipurpose material and covers: Physical, chemical and structural properties of silicon Production routes including the promise of low cost feedstock for PV applications Defect engineering and the role of impurities and defects Characterization techniques, and advanced analytical techniques for metallic and non-metallic impurities Thin film silicon and thin film solar cells Innovative quantum effects, and 3rd generation solar cells With contributions from internationally recognized authorities, this book gives a comprehensive analysis of the state-of-the-art of process technologies and material properties, essential for anyone interested in the application and development of photovoltaics.
Author: G. M. Grigoreva
Author: G. M. Grigoreva
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