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Author: Timothy David Veal Publisher: CRC Press ISBN: 1439859612 Category : Technology & Engineering Languages : en Pages : 707
Book Description
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
Author: Timothy David Veal Publisher: CRC Press ISBN: 1439859612 Category : Technology & Engineering Languages : en Pages : 707
Book Description
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
Author: Zhe Chuan Feng Publisher: World Scientific ISBN: 1848162235 Category : Technology & Engineering Languages : en Pages : 477
Book Description
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Author: M Razeghi Publisher: Elsevier ISBN: 9780080444260 Category : Science Languages : en Pages : 602
Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author: Publisher: Newnes ISBN: 0080932282 Category : Science Languages : en Pages : 3572
Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author: Publisher: John Wiley & Sons ISBN: 1118514556 Category : Science Languages : en Pages : 416
Book Description
The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.
Author: Junqiao Wu Publisher: Springer Science & Business Media ISBN: 1441999310 Category : Technology & Engineering Languages : en Pages : 371
Book Description
Metal oxides and particularly their nanostructures have emerged as animportant class of materials with a rich spectrum of properties and greatpotential for device applications. In this book, contributions from leadingexperts emphasize basic physical properties, synthesis and processing, and thelatest applications in such areas as energy, catalysis and data storage. Functional Metal Oxide Nanostructuresis an essential reference for any materials scientist or engineer with aninterest in metal oxides, and particularly in recent progress in defectphysics, strain effects, solution-based synthesis, ionic conduction, and theirapplications.
Author: Simon Aldridge Publisher: John Wiley & Sons ISBN: 0470681918 Category : Science Languages : en Pages : 763
Book Description
The last two decades have seen a renaissance in interest in the chemistry of the main group elements. In particular research on the metals of group 13 (aluminium, gallium, indium and thallium) has led to the synthesis and isolation of some very novel and unusual molecules, with implications for organometallic synthesis, new materials development, and with biological, medical and, environmental relevance. The Group 13 Metals Aluminium, Gallium, Indium and Thallium aims to cover new facts, developments and applications in the context of more general patterns of physical and chemical behaviour. Particular attention is paid to the main growth areas, including the chemistry of lower formal oxidation states, cluster chemistry, the investigation of solid oxides and hydroxides, advances in the formation of III-V and related compounds, the biological significance of Group 13 metal complexes, and the growing importance of the metals and their compounds in the mediation of organic reactions. Chapters cover: general features of the group 13 elements group 13 metals in the +3 oxidation state: simple inorganic compounds formal oxidation state +3: organometallic chemistry formal oxidation state +2: metal-metal bonded vs. mononuclear derivatives group 13 metals in the +1 oxidation state mixed or intermediate valence group 13 metal compounds aluminium and gallium clusters: metalloid clusters and their relation to the bulk phases, to naked clusters, and to nanoscaled materials simple and mixed metal oxides and hydroxides: solids with extended structures of different dimensionalities and porosities coordination and solution chemistry of the metals: biological, medical and, environmental relevance III-V and related semiconductor materials group 13 metal-mediated organic reactions The Group 13 Metals Aluminium, Gallium, Indium and Thallium provides a detailed, wide-ranging, and up-to-date review of the chemistry of this important group of metals. It will find a place on the bookshelves of practitioners, researchers and students working in inorganic, organometallic, and materials chemistry.
Author: Shangjr Gwo Publisher: Elsevier ISBN: 0323860184 Category : Technology & Engineering Languages : en Pages : 347
Book Description
Plasmonic Materials and Metastructures: Fundamentals, Current Status, and Perspectives reviews the current status and emerging trends in the development of conventional and alternative plasmonic materials. Sections cover fundamentals and emerging trends of plasmonic materials development, including synthesis strategies (chemical and physical) and optical characterization techniques. Next, the book addresses fundamentals, properties, remaining barriers for commercial translation, and the latest advances and opportunities for conventional noble metal plasmonic materials. Fundamentals and advances for alternative plasmonic materials are also reviewed, including two-dimensional hybrid materials composed of graphene, monolayer transition metal dichalcogenides, boron nitride, etc. In addition, other sections cover applications of plasmonic metastructures enabled by plasmonic materials with improved material properties and newly discovered functionalities. Applications reviewed include quantum plasmonics, topological plasmonics, chiral plasmonics, nanolasers, imaging (metalens), active, and integrated technologies. - Provides an overview of materials properties, characterization and fabrication techniques for plasmonic metastructured materials - Includes key concepts and advances for a wide range of metastructured materials, including metamaterials, metasurfaces and epsilon-near-zero plasmonic metastructures - Discusses emerging applications and barriers to commercial translation for quantum plasmonics, topological plasmonics, nanolasers, imaging and integrated technologies
Author: Zhe Chuan Feng Publisher: World Scientific ISBN: 1908979941 Category : Technology & Engineering Languages : en Pages : 442
Book Description
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Author: Timothy David Veal
Author: Timothy David Veal
Author: Zhe Chuan Feng
Author: M Razeghi
Author: 
Author: 
Author: Junqiao Wu
Author: Rebecca Elizabeth Jones
Author: Simon Aldridge
Author: Shangjr Gwo
Author: Zhe Chuan Feng