In Situ Infrared Reflection Absorption Spectroscopic Characterization of Plasma Enhanced Chemical Vapor Deposited SiO2 Films PDF Download
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Author: K. B. Koller Publisher: ISBN: Category : Languages : en Pages : 32
Book Description
The sensitivity and selectivity of double modulation Fourier Transform Infrared Reflection Absorption Spectroscopy for absorbing species on a reflecting surface has been employed for the in situ analysis of low temperature Plasma Enhanced Chemical Vapor Deposition formed SiO2 films deposited on HgCdTe, Silicon, and Aluminum substrates. An oblique angle of incidence of ca. 55 was chosen to yield maximum sensitivity for the longitudinal optical phonon model of SiO2 on Si. The peak frequency and shape of the LO mode absorption band varied with the quality of the SiO2 films thus providing a means of in situ assessment of reaction conditions at any stage of film growth. This diagnostic technique can be readily applied to the in situ analysis of dielectric thin films formed under a variety of reaction conditions. Silicon dioxide. (MJM).
Author: K. B. Koller Publisher: ISBN: Category : Languages : en Pages : 32
Book Description
The sensitivity and selectivity of double modulation Fourier Transform Infrared Reflection Absorption Spectroscopy for absorbing species on a reflecting surface has been employed for the in situ analysis of low temperature Plasma Enhanced Chemical Vapor Deposition formed SiO2 films deposited on HgCdTe, Silicon, and Aluminum substrates. An oblique angle of incidence of ca. 55 was chosen to yield maximum sensitivity for the longitudinal optical phonon model of SiO2 on Si. The peak frequency and shape of the LO mode absorption band varied with the quality of the SiO2 films thus providing a means of in situ assessment of reaction conditions at any stage of film growth. This diagnostic technique can be readily applied to the in situ analysis of dielectric thin films formed under a variety of reaction conditions. Silicon dioxide. (MJM).
Author: National Research Council Publisher: National Academies Press ISBN: 0309175135 Category : Science Languages : en Pages : 74
Book Description
In spite of its high cost and technical importance, plasma equipment is still largely designed empirically, with little help from computer simulation. Plasma process control is rudimentary. Optimization of plasma reactor operation, including adjustments to deal with increasingly stringent controls on plant emissions, is performed predominantly by trial and error. There is now a strong and growing economic incentive to improve on the traditional methods of plasma reactor and process design, optimization, and control. An obvious strategy for both chip manufacturers and plasma equipment suppliers is to employ large-scale modeling and simulation. The major roadblock to further development of this promising strategy is the lack of a database for the many physical and chemical processes that occur in the plasma. The data that are currently available are often scattered throughout the scientific literature, and assessments of their reliability are usually unavailable. Database Needs for Modeling and Simulation of Plasma Processing identifies strategies to add data to the existing database, to improve access to the database, and to assess the reliability of the available data. In addition to identifying the most important needs, this report assesses the experimental and theoretical/computational techniques that can be used, or must be developed, in order to begin to satisfy these needs.
Author: Valeri P. Tolstoy Publisher: John Wiley & Sons ISBN: 0471461830 Category : Technology & Engineering Languages : en Pages : 710
Book Description
Because of the rapid increase in commercially available Fouriertransform infrared spectrometers and computers over the past tenyears, it has now become feasible to use IR spectrometry tocharacterize very thin films at extended interfaces. At the sametime, interest in thin films has grown tremendously because ofapplications in microelectronics, sensors, catalysis, andnanotechnology. The Handbook of Infrared Spectroscopy of UltrathinFilms provides a practical guide to experimental methods,up-to-date theory, and considerable reference data, critical forscientists who want to measure and interpret IR spectra ofultrathin films. This authoritative volume also: Offers informationneeded to effectively apply IR spectroscopy to the analysis andevaluation of thin and ultrathin films on flat and rough surfacesand on powders at solid-gaseous, solid-liquid, liquid-gaseous,liquid-liquid, and solid-solid interfaces. Provides full discussion of theory underlying techniques Describes experimental methods in detail, including optimumconditions for recording spectra and the interpretation ofspectra Gives detailed information on equipment, accessories, andtechniques Provides IR spectroscopic data tables as appendixes, includingthe first compilation of published data on longitudinal frequenciesof different substances Covers new approaches, such as Surface Enhanced IR spectroscopy(SEIR), time-resolved FTIR spectroscopy, high-resolutionmicrospectroscopy and using synchotron radiation
Author: Babu Suryadevara Publisher: Woodhead Publishing ISBN: 0128218193 Category : Technology & Engineering Languages : en Pages : 650
Book Description
Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP
Author: K. B. Koller
Author: K. B. Koller
Author: National Research Council
Author: 
Author: Valeri P. Tolstoy
Author: 
Author: Yongwoong Bae
Author: Cameron Edwin Shearon
Author: Werner J. Blau
Author: Babu Suryadevara
Author: Arjen Boogaard