Ion Implantation and Synthesis of Materials PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Ion Implantation and Synthesis of Materials PDF full book. Access full book title Ion Implantation and Synthesis of Materials by Michael Nastasi. Download full books in PDF and EPUB format.
Author: Michael Nastasi Publisher: Springer Science & Business Media ISBN: 3540452982 Category : Science Languages : en Pages : 271
Book Description
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Author: Michael Nastasi Publisher: Springer Science & Business Media ISBN: 3540452982 Category : Science Languages : en Pages : 271
Book Description
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Author: Billy Crowder Publisher: Springer Science & Business Media ISBN: 146842064X Category : Science Languages : en Pages : 644
Book Description
During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.
Author: Publisher: ISBN: Category : Languages : en Pages : 10
Book Description
A model is presented to account for the effects of ion-induced defects during implantation processing of Si. It will be shown that processing is quite generally affected by the presence of defect excesses rather than the total number of defects. a defect is considered excess if it represents a surplus locally of one defect type over its compliment. Processing spanning a wide range of implantation conditions will be presented to demonstrate that the majority of the total defects played little or no role in the process. This is a direct result of the ease with which the spatially correlated Frenkel pairs recombine either dynamically or during a post-implantation annealing. Based upon this model, a method will be demonstrated for manipulating or engineering the excess defects to modify their effects. In particular high-energy, self-ions are shown to inject vacancies into a boron implanted region resulting in suppression of transient enhanced diffusion of the dopant.
Author: J. S. Williams Publisher: Academic Press ISBN: 1483220648 Category : Technology & Engineering Languages : en Pages : 432
Book Description
Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.
Author: Stephen E. Saddow Publisher: Artech House ISBN: 9781580537414 Category : Science Languages : en Pages : 236
Book Description
Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Author: Thomas James Ratcliff Publisher: ISBN: Category : Languages : en Pages : 0
Book Description
Ion implantation is investigated as a method for forming the heavily doped regions of silicon solar cells. Research is conducted with the aim of implementing ion implantation into the fabrication process of the Australian National University's interdigitated back contact and Sliver solar cell designs. High temperature annealing of boron and phosphorus implanted silicon is investigated, with an emphasis on thermal oxidation. The effect of annealing ambient on B implanted Si is studied, with an oxidising ambient shown to result in higher carrier recombination and lower dopant activation compared with annealing in an inert ambient. The effect of process temperature during inert annealing of B implanted Si is investigated. The impact of implantation damage for B implanted Si after high temperature annealing is quantified and used to identify the regimes of implantation damage by their impact on electron-hole recombination as a function of implantation fluence and sheet resistance. The defects present after annealing B implanted Si are studied and related to the observed trends in recombination. An oxidation recipe optimised to minimise recombination after B implantation is developed by minimising oxidation time and including a high temperature inert anneal prior to oxidation. The temperature dependence of P implanted Si during thermal oxidation is investigated for a range of implantation fluences. It is found samples that provided the samples is completely amorphised during implantation, annealing at 900 degrees Celsius is as effective as 1050 degrees Celsius. Studies of recombination and contact resistivity are used to design a P implanted point contact for an interdigitated back contact solar cell. Solid phase epitaxial regrowth is used to anneal P implanted Si at 600 degrees Celsius for 10 minutes. The enhancement in dielectric etch rate after implantation is used as a method to form self-aligned, localised doping and electrical contacts. Implanting dopant atoms through a dielectric layer locally enhances the etch rate relative to non-implanted regions of the same dielectric. Chemical etching selectively exposes on the regions doped by implantation while passivation is preserved in the surround dielectric. Laser processing is investigated as a low thermal budget technique to anneal implanted Si. Laser doping from a dielectric layer implanted with dopant atoms is presented as a method for forming self-aligned doping and contacts. This method was demonstrated using a dielectric stack of silicon oxide and silicon nitride implanted with P and an a-Si passivation layer implanted with B. Ion implantation is used to fabricate interdigitated back contact and Sliver solar cells, achieving significant process simplification compared with reference fabrication processes. The fabrication process for each cell type is reduced to a single high temperature step only. For Sliver cells, conversion efficiency of 16% is achieved and efficiency greater than 22% is demonstrated for interdigitated back contact cells, where implantation does not limit the cell performance.
Author: J.F. Ziegler Publisher: Elsevier ISBN: 0323161650 Category : Science Languages : en Pages : 509
Book Description
Ion Implantation Science and Technology: Second Edition, just like the first edition, serves as both an introduction and tutorial to the science, techniques, and machines involved in the subject. The book is divided into two parts - Part 1: Ion Implantation Science and Part 2: Ion Implantation Technology. Part 1 covers topics such as the stopping and range of ions in solids; ion implantation damage in silicon; experimental annealing and activation; and the measurement on ion implantation. Part 2 includes ion optics and focusing on implanter design; photoresist problems and particle contamination; ion implantation diagnostics and process control; and emission of ionizing radiation from ion implanters. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
Author: Emanuele Rimini Publisher: Springer Science & Business Media ISBN: 1461522595 Category : Technology & Engineering Languages : en Pages : 400
Book Description
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Author: Michael Nastasi
Author: Michael Nastasi
Author: James Stanislaus Williams
Author: Billy Crowder
Author: 
Author: Michael Nastasi
Author: J. S. Williams
Author: Stephen E. Saddow
Author: Thomas James Ratcliff
Author: J.F. Ziegler
Author: Emanuele Rimini