III-V Ternary Semiconducting Compounds-Data Tables PDF Download
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Author: Sadao Adachi Publisher: John Wiley & Sons ISBN: 9780471573296 Category : Science Languages : en Pages : 342
Book Description
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Author: D. Nirmal Publisher: CRC Press ISBN: 0429862539 Category : Science Languages : en Pages : 430
Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: H. Dittrich Publisher: Springer ISBN: 9783540667810 Category : Technology & Engineering Languages : en Pages : 0
Book Description
Vols. III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and II-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of seven subvolumes covers only the supplementary data to volumes III/17 and 22. Enclosed to each subvolumes, a CD-ROM contains a complete, revised and update edition of all relevant data. For each individual substance the information is presented in user friendly documents, containing data, figures and references. Easy access to the documents is provided via substance and property keywords, listings and full text retrieval.
Author: Keh Yung Cheng Publisher: Springer Nature ISBN: 3030519031 Category : Technology & Engineering Languages : en Pages : 537
Book Description
This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Author: H. Dittrich Publisher: Springer ISBN: 9783540667810 Category : Technology & Engineering Languages : en Pages : 518
Book Description
Vols. III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and II-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of seven subvolumes covers only the supplementary data to volumes III/17 and 22. Enclosed to each subvolumes, a CD-ROM contains a complete, revised and update edition of all relevant data. For each individual substance the information is presented in user friendly documents, containing data, figures and references. Easy access to the documents is provided via substance and property keywords, listings and full text retrieval.
Author: M. Neuberger Publisher: ISBN: Category : Image intensifiers Languages : en Pages : 94
Book Description
The groups II-VI ternary semiconducting compounds are of technological device importance as cathode-ray tube screens, infrared detectors, display devices, injection lasers, solar cells and image intensifiers. These tables include the most reliable property information available to date for these compounds, including mechanical, crystallographic, physical, thermal, magnetic, electronic and optical data. (Author).
Author: O. Madelung Publisher: Springer Science & Business Media ISBN: 366200464X Category : Science Languages : en Pages : 192
Book Description
In the New Series of Landolt-Bomstein the eleven volumes III/17a···i and III/22a,b present data on the properties of semiconductors on more than 6 000 pages with tables and (about 10 000) figures. The aim of the Series "Data in Science and Technology" is to built a bridge between the libraries, where such comprehensive handbooks are situated, and the laboratory. The first volume of this series, published in 1991, contains data on the most important groups of semiconductors, the group IV elements and the III-V compounds. From the wealth of data in the tables and figures of the Landolt-Bornstein volumes III/17a and III/22a,b about 10% were condensed into this first volume. It seemed not appropriate to condense to the same extent all the other material of the remaining nine subvolumes into several further DST volumes. Instead of it all remaining data have been put into the present volume. To do this some severe restrictions became necessary. They are explained in the Introduction, and the reader is asked to read it before using this book. I would further like to focus the attention of the reader on chapter 8, where the bridge between this DST volume and the LB sources is built by cross-references between both books. I do hope that this volume meets the needs of the physical community as a quick reference to basic semiconductor data and an access to the larger data collections on this field of physics.
Author: M. Neuberger
Author: M. Neuberger
Author: M. Neuberger
Author: M. Neuberger
Author: Sadao Adachi
Author: D. Nirmal
Author: H. Dittrich
Author: Keh Yung Cheng
Author: H. Dittrich
Author: M. Neuberger
Author: O. Madelung