III-Nitride, SiC, and Diamond Materials for Electronic Devices: Volume 423 PDF Download
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Author: D. Kurt Gaskill Publisher: ISBN: Category : Science Languages : en Pages : 824
Book Description
This book differs from previous volumes on wide bandgap semiconductors in that the emphasis is specifically on materials aspects related to electronic properties and devices. Solid advances are reported in the growth techniques of all three materials groups. In particular, the critical importance of surfaces, interfaces, doping, defects and impurities is demonstrated. Potential device applications ranging from new high-frequency, high-power all-solid-state devices to unique cold-cathode electronic devices are presented. Whilst the results demonstrate real promise for a wide range of new solid-state devices that are not feasible with current production materials, it is also evident that substantial progress in materials research is needed to fulfill the real potential of these applications. Critical issues related to the electronic potential of all three materials are addressed. Topics include: device technologies - devices, metallizations, etching, and implantation; bulk and bulk-like crystal growth; film growth; defects and structural properties; doping and electrical properties and optical and field-emission properties.
Author: D. Kurt Gaskill Publisher: ISBN: Category : Science Languages : en Pages : 824
Book Description
This book differs from previous volumes on wide bandgap semiconductors in that the emphasis is specifically on materials aspects related to electronic properties and devices. Solid advances are reported in the growth techniques of all three materials groups. In particular, the critical importance of surfaces, interfaces, doping, defects and impurities is demonstrated. Potential device applications ranging from new high-frequency, high-power all-solid-state devices to unique cold-cathode electronic devices are presented. Whilst the results demonstrate real promise for a wide range of new solid-state devices that are not feasible with current production materials, it is also evident that substantial progress in materials research is needed to fulfill the real potential of these applications. Critical issues related to the electronic potential of all three materials are addressed. Topics include: device technologies - devices, metallizations, etching, and implantation; bulk and bulk-like crystal growth; film growth; defects and structural properties; doping and electrical properties and optical and field-emission properties.
Author: R. J. Shul Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 480
Book Description
III-V semiconductors have continued to find new applications in optical data transmission, full-color displays, automotive electronics and personal communication systems. Complex epitaxial growth, processing, device design and circuit architecture are all necessary for realization of these elements. This book brings together the diverse group of scientists and researchers that are required to develop the next-generation devices. The wide bandgap nitrides, GaN, AlN, InN and their alloys are featured. The commercial availability of blue- and green-light-emitting diodes based on the InGaN/AlGaN system, and the recent announcement of pulsed operation of a laser diode, have stimulated interest in the growth, characterization and processing of these materials. Potential applications in high-temperature/high-power electronics appear promising because of the good transport properties of these nitrides. Topics include: growth and characterization; photonics and processing; electronics and processing; wide bandgap semiconductors and novel devices and processing.
Author: Louis J. Terminello Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 282
Book Description
As third-generation synchrotron facilities are constructed and go online in both the United States and around the world, increasingly more applications of synchrotron radiation will be realized. Both basic and applied research possibilities are manyfold, and include studies of solid surfaces and interfaces, electronic materials, metal oxides, glasses, thin films, superconductors, polymers, alloys, multilayer metal systems and intermetallic compounds. In addition, the combination of synchrotron-based spectroscopic techniques, with ever increasing high-resolution microscopy, allows researchers to study very small domains of materials in an attempt to understand their chemical and electronic properties. This book from MRS focuses on the various types of information that can be obtained from synchrotron-related techniques in order to expand the use of this unique and powerful experimental approach to materials research. Topics include: structure of reduced dimensional materials; magnetic materials; microscopy, topography and tomography; X-ray probes of solids; and materials characterization with X-ray absorption.
Author: William F. Filter Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 616
Book Description
MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.
Author: Michael L. Reed Publisher: ISBN: Category : Mathematics Languages : en Pages : 264
Book Description
A selection of 33 reviewed papers explore the materials aspects of microsystems, especially those involving mechanical, optical, and thermal components. The topics include technology for micro- assembling, selective electroless copper metallization of epoxy substrates, an improved auto-adhesion measurement method for micro-machines polysilicon beams, patterned sol-gel structures by micro-molding in capillaries, the experimental analysis of the process of anodic bonding using an evaporated glass layer, the effect of inorganic thin film material processing and properties on stress in silicon piezoresistive pressure sensors, and photoconductivity in vacuum-deposited films of silicon-based polymers. Annotation copyrighted by Book News, Inc., Portland, OR
Author: Peter Friedrichs Publisher: John Wiley & Sons ISBN: 9783527629084 Category : Science Languages : en Pages : 520
Book Description
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Author: D. Kurt Gaskill
Author: D. Kurt Gaskill
Author: Fernando A. Ponce
Author: 
Author: R. J. Shul
Author: Louis J. Terminello
Author: William F. Filter
Author: P. C. Chang
Author: Michael L. Reed
Author: Peter Friedrichs
Author: M. Cahay