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Hydrogenated Amorphous Silicon Prepared by D.c. Plasma Enhanced Chemical Vapour Deposition of Helium Diluted Silane

Hydrogenated Amorphous Silicon Prepared by D.c. Plasma Enhanced Chemical Vapour Deposition of Helium Diluted Silane PDF Author: Roszairi Haron
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 320

Book Description


Hydrogenated Amorphous Silicon Prepared by D.c. Plasma Enhanced Chemical Vapour Deposition of Helium Diluted Silane

Hydrogenated Amorphous Silicon Prepared by D.c. Plasma Enhanced Chemical Vapour Deposition of Helium Diluted Silane PDF Author: Roszairi Haron
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 320

Book Description


Plasma Deposition of Amorphous Silicon-Based Materials

Plasma Deposition of Amorphous Silicon-Based Materials PDF Author: Pio Capezzuto
Publisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339

Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices

High-rate growth of hydrogenated amorphous and microcrystalline silicon for thin-film silicon solar cells using dynamic very-high frequency plasma-enhanced chemical vapor deposition

High-rate growth of hydrogenated amorphous and microcrystalline silicon for thin-film silicon solar cells using dynamic very-high frequency plasma-enhanced chemical vapor deposition PDF Author: Thomas Zimmermann
Publisher: Forschungszentrum Jülich
ISBN: 3893368922
Category :
Languages : en
Pages : 143

Book Description


Amorphous Silicon (a-Si:H)/silicon Nitride (a-SiNx:H) Superlattice by D.C. Plasma Enhanced Chemical Vapour Deposition

Amorphous Silicon (a-Si:H)/silicon Nitride (a-SiNx:H) Superlattice by D.C. Plasma Enhanced Chemical Vapour Deposition PDF Author: Sufian Mousa Ibrahim Mitani
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 496

Book Description


Growth and Characterization of Hydrogenated Amorphous Silicon Prepared Using a Combined Hot Wire and Electron Cyclotron Resonance Plasma Deposition Technique

Growth and Characterization of Hydrogenated Amorphous Silicon Prepared Using a Combined Hot Wire and Electron Cyclotron Resonance Plasma Deposition Technique PDF Author: Matthew Alan Ring
Publisher:
ISBN:
Category :
Languages : en
Pages : 94

Book Description
Hot Wire Chemical Vapor Deposition (HWCVD) is an emerging technology in semiconductor materials thin film deposition due to the high growth rates and reasonable electronic properties attainable using this method. To improve the electronic characteristics of material grown by the HWCVD method, neutral ion bombardment during growth was introduced as it is shown to be beneficial in Plasma Enhanced Chemical Vapor Deposition (PECVD). Neutral ion bombardment was accomplished by using remote Electron Cyclotron Resonance (ECR) plasma and the entire deposition technique is termed ECR-HWCVD. The ECR-HWCVD films were compared to HWCVD materials deposited without ion bombardment grown at similar conditions in the same reactor using a 10.5 cm filament to substrate distance to minimize substrate heating by radiation during deposition. The growth rate is halved when ion bombardment is added to HWCVD, however it remains four times greater than the highest quality ECR-PECVD films. Also, ECR-HWCVD material exhibited better electronic properties as shown by Urbach energy, photosensitivity, hydrogen content, microstructure parameters, and space charge limited current defect measurements. In addition, the effect of substrate temperature on hydrogen content and material microstructure was investigated. Both hydrogen content and the microstructure parameter R decreased as substrate temperature increased; and when ion bombardment was added to the deposition conditions, the microstructure parameter decreased regardless of substrate temperature.

Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells

Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells PDF Author: Wilfried G. J. H. M. van Sark
Publisher: Springer Science & Business Media
ISBN: 3642222757
Category : Technology & Engineering
Languages : en
Pages : 588

Book Description
Today’s solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both „emitter“ and „base-contact/back surface field“ on both sides of a thin crystalline silicon wafer-base (c-Si) where the electrons and holes are photogenerated; at the same time, a-Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. The heterojunction concept is introduced, processes and resulting properties of the materials used in the cell and their heterointerfaces are discussed and characterization techniques and simulation tools are presented.

Hydrogenated Amorphous Silicon by Pulsed Plasma Enhanced Chemical Vapour Deposition Technique

Hydrogenated Amorphous Silicon by Pulsed Plasma Enhanced Chemical Vapour Deposition Technique PDF Author: Boon Tong Goh
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 378

Book Description


Hydrogenated Amorphous Silicon Solar Cells Deposited from Silane Diluted with Hydrogen

Hydrogenated Amorphous Silicon Solar Cells Deposited from Silane Diluted with Hydrogen PDF Author: Gijs van Elzakker
Publisher:
ISBN: 9789090255323
Category :
Languages : en
Pages :

Book Description


Optical and Electrical Properties of Amorphous Silicon Prepared by Chemical Vapor Deposition and Plasma Hydrogenation

Optical and Electrical Properties of Amorphous Silicon Prepared by Chemical Vapor Deposition and Plasma Hydrogenation PDF Author: Gary Louis Scheidegger
Publisher:
ISBN:
Category : Hydrogenation
Languages : en
Pages : 340

Book Description


Structural Properties of Hydrogenated Amorphous Silicon (a-Si:H) Thin Film Grown Via Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD)

Structural Properties of Hydrogenated Amorphous Silicon (a-Si:H) Thin Film Grown Via Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) PDF Author: Hasbullah Anthony Hasbi
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages :

Book Description