Author: Christopher Ian ThomasPublisher:
ISBN:
Category :
Languages : en
Pages : 218
Book Description
Hydrogen Chloride Enhanced Growth of Silicon Carbide by Chemical Vapor Deposition in a Vertical Cold Wall Reactor
Author: Christopher Ian ThomasPublisher:
ISBN:
Category :
Languages : en
Pages : 218
Book Description
The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor
![The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor PDF](https://books.google.com/books/content/images/frontcover/GZ9RNwAACAAJ?fife=w80-h100)
Author: Kenneth George IrvinePublisher:
ISBN:
Category :
Languages : en
Pages : 170
Book Description
Development of a Polysilicon Process Based on Chemical Vapor Deposition (phase 1)
Author: Hemlock Semiconductor CorporationPublisher:
ISBN:
Category : Chemical processes
Languages : en
Pages : 62
Book Description
Chemical Vapor Deposition Growth
Author: Ralph Powers RuthPublisher:
ISBN:
Category : Silicon
Languages : en
Pages : 104
Book Description
Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition
Author: Theodore M. BesmannPublisher: The Electrochemical Society
ISBN: 9781566771559
Category : Science
Languages : en
Pages : 922
Book Description
Modeling and Growth of the 3C-SiC Heteroepitaxial System Via Chloride Chemistry
Author: Meralys Reyes-NatalPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The best quality layer achieved in this study had a FWHM of 278 arcsec; which is comparable to values reported in the literature and to films grown at higher deposition temperatures in this study. It was concluded from this work that at lower deposition temperatures the HCl addition was more beneficial for the film quality by enhancing the surface. Surface roughness values for films grown with HCl additive were 10 times lower than for films grown without HCl. Characterization of the epitaxial layers was carried out via Nomarski optical microscopy, FTIR, SEM, AFM, XRD and XPS.
Chemical Vapor Deposition: 1960-1980
Author: Donald T. HawkinsPublisher: Springer
ISBN:
Category : Reference
Languages : en
Pages : 762
Book Description
Principles of Chemical Vapor Deposition
Author: D.M. DobkinPublisher: Springer Science & Business Media
ISBN: 9401703698
Category : Technology & Engineering
Languages : en
Pages : 277
Book Description
Principles of Chemical Vapor Deposition provides a simple introduction to heat and mass transfer, surface and gas phase chemistry, and plasma discharge characteristics. In addition, the book includes discussions of practical films and reactors to help in the development of better processes and equipment. This book will assist workers new to chemical vapor deposition (CVD) to understand CVD reactors and processes and to comprehend and exploit the literature in the field. The book reviews several disparate fields with which many researchers may have only a passing acquaintance, such as heat and mass transfer, discharge physics, and surface chemistry, focusing on key issues relevant to CVD. The book also examines examples of realistic industrial reactors and processes with simplified analysis to demonstrate how to apply the principles to practical situations. The book does not attempt to exhaustively survey the literature or to intimidate the reader with irrelevant mathematical apparatus. This book is as simple as possible while still retaining the essential physics and chemistry. The book is generously illustrated to assist the reader in forming the mental images which are the basis of understanding.
Some Factors Affecting the Growth of Beta Silicon Carbide
Author: Charles Edward RyanPublisher:
ISBN:
Category : Chlorine compounds
Languages : en
Pages : 28
Book Description
The report discusses the growth of beta silicon carbide by the hydrogen reduction of methyl trichlorine onto carbon substrates at 1500C. It is shown that alpha inclusions present are the rare 2H (Wurtzite) modification of silicon carbide and that their presence resulted from a vapor-liquid-solid growth mechanism which was dominated by impurities in the substrate. By carefully cleaning the substrate and purifying the methyltrichlorosilane, the alpha inclusions were eliminated. The 2H alpha crystals were then deliberately grown by introducing selected impurities locally on the substrate. Beta crystals were also intentionally grown by the vapor-liquid-solid technique by introducing appropriate impurities. Growth of beta silicon carbide from the melt is also briefly discussed. (Author).
Cold Wall Reactor for Ultra-high Vacuum High Teperature Chemical Vapor Deposition
Author: Micah Shane PointsPublisher:
ISBN:
Category :
Languages : en
Pages : 134
Book Description
Chemical vapor deposition is a process that enables the deposition of thin films material with a high degree of thickness control, composition and film quality. In an ultra-high vacuum environment (UHV), films of high purity and controlled crystal structure can be achieved. The control of the crystal structure is achieved thanks to reduced contamination, e.g. oxygen, which allows the grown film to align itself with the underlying substrate. The film purity is also ensured by the reduced amount of contaminants present in the UHV environment. This master's thesis discusses the design and construction of a cold wall reactor using a pyrolytic graphite heater encased in a thin layer of pyrolytic boron nitride, and an Oerlikon-Leybold Turbovac 361 turbomolecular pump. This heater is shown to achieve temperatures greater than 1200°C, as well as reach pressures in the 10-10 Torr range. Graphene growth on copper is discussed as well as the ultra-high vacuum annealing of graphene devices on boron nitride substrates. The graphene growth experiments coupled with this system's annealing capabilities demonstrate the functionality and versatility of this type of chemical vapor deposition system.