Author: David Quest KellyPublisher:
ISBN:
Category :
Languages : en
Pages : 132
Book Description
Hot-carrier reliability of strain-engineered MOSFETs
Author: David Quest KellyStrain-Engineered MOSFETs
Author: C.K. MaitiPublisher: CRC Press
ISBN: 1466503475
Category : Technology & Engineering
Languages : en
Pages : 320
Book Description
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Hot-carrier Reliability of MOSFETs at Room and Cryogenic Temperature
Author: SeokWon Abraham KimHot Carrier Reliability Characterization of 0.25 Micrometer MOSFETs with Alternative Gate Dielectrics
Author: Celisa Kelly DateHot Carrier Degradation in Semiconductor Devices
Author: Tibor GrasserPublisher: Springer
ISBN: 3319089943
Category : Technology & Engineering
Languages : en
Pages : 518
Book Description
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Development and Hot-Carrier Reliability Study of Integrated High-Voltage MOSFET Transistors
Author: 吳國銘Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
Author: Jacopo FrancoPublisher: Springer Science & Business Media
ISBN: 9400776632
Category : Technology & Engineering
Languages : en
Pages : 203
Book Description
Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.
Studies on Hot-Carrier Reliability in High-Voltage MOSFETs
Author: 李佳叡Hot-carrier Reliability of Silicon-on-insulator (SOI) MOSFETs and Applications to Non-volatile Memories
Author: Shankar P. SinhaThe Reliability of Strained Si Mosfets on Varied Technology Platforms
Author: Rimoon AgaibyPublisher: LAP Lambert Academic Publishing
ISBN: 9783838363325
Category :
Languages : en
Pages : 176
Book Description
The reliability of strained Si devices on several technology platforms has been investigated, highlighting the advantages and disadvantages in each case. The devices had biaxial strain induced through the use of a SiGe strain relaxed buffer or uniaxial strain induced through the use of strained nitride liners or stress memorisation. Since there is much literature demonstrating the benefits of using strain engineering to enhance drive current and speed, the aim of this thesis has been to present several aspects of device reliability that have not been studied previously and to demonstrate the need for significantly more research.