Author: Publisher:
ISBN:
Category : Naval research
Languages : en
Pages : 620
Book Description
Naval Research Reviews
Author: Essderc'98
Author: Publisher: Atlantica Séguier Frontières
ISBN: 9782863322345
Category : Semiconductors
Languages : en
Pages : 680
Book Description
Hot Carrier Degradation in Semiconductor Devices
Author: Tibor GrasserPublisher: Springer
ISBN: 3319089943
Category : Technology & Engineering
Languages : en
Pages : 518
Book Description
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Ion Implantation Technology - 92
Author: D.F. DowneyPublisher: Elsevier
ISBN: 0444599800
Category : Technology & Engineering
Languages : en
Pages : 716
Book Description
Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.
Electrical & Electronics Abstracts
Author: Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304
Book Description
Japanese Journal of Applied Physics
Author: Failure Analysis
Author: Marius BazuPublisher: John Wiley & Sons
ISBN: 1119990009
Category : Technology & Engineering
Languages : en
Pages : 372
Book Description
Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.
Low Power Digital CMOS Design
Author: Anantha P. ChandrakasanPublisher: Springer Science & Business Media
ISBN: 1461523257
Category : Technology & Engineering
Languages : en
Pages : 419
Book Description
Power consumption has become a major design consideration for battery-operated, portable systems as well as high-performance, desktop systems. Strict limitations on power dissipation must be met by the designer while still meeting ever higher computational requirements. A comprehensive approach is thus required at all levels of system design, ranging from algorithms and architectures to the logic styles and the underlying technology. Potentially one of the most important techniques involves combining architecture optimization with voltage scaling, allowing a trade-off between silicon area and low-power operation. Architectural optimization enables supply voltages of the order of 1 V using standard CMOS technology. Several techniques can also be used to minimize the switched capacitance, including representation, optimizing signal correlations, minimizing spurious transitions, optimizing sequencing of operations, activity-driven power down, etc. The high- efficiency of DC-DC converter circuitry required for efficient, low-voltage and low-current level operation is described by Stratakos, Sullivan and Sanders. The application of various low-power techniques to a chip set for multimedia applications shows that orders-of-magnitude reduction in power consumption is possible. The book also features an analysis by Professor Meindl of the fundamental limits of power consumption achievable at all levels of the design hierarchy. Svensson, of ISI, describes emerging adiabatic switching techniques that can break the CV2f barrier and reduce the energy per computation at a fixed voltage. Srivastava, of AT&T, presents the application of aggressive shut-down techniques to microprocessor applications.
JJAP
Author: Hot-Carrier Effects in MOS Devices
Author: Eiji TakedaPublisher: Academic Press
ISBN: 0126822409
Category : Juvenile Nonfiction
Languages : en
Pages : 329
Book Description
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject