Author: Tong-Chern OngPublisher:
ISBN:
Category :
Languages : en
Pages : 304
Book Description
Hot-carrier Effects in P-MOSFETs
Author: Tong-Chern OngHot-Carrier Effects in MOS Devices
Author: Eiji TakedaPublisher: Academic Press
ISBN: 0126822409
Category : Juvenile Nonfiction
Languages : en
Pages : 329
Book Description
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Hot-Carrier Effects in MOS Devices
Author: Eiji TakedaPublisher: Elsevier
ISBN: 0080926223
Category : Technology & Engineering
Languages : en
Pages : 329
Book Description
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Hot Carrier Effects in Hydrogen Passivated P-channel Polycrystalline-Si MOSFETs
Author: M. RodderPublisher:
ISBN:
Category : Hot carriers
Languages : en
Pages : 11
Book Description
Investigation of Hot Carrier Effects in P-mosfet
Author: Tonita SeliMOSFET Performance Degradation Due to Hot Carriers
Author: Jeong Yeol ChoiPublisher:
ISBN:
Category : Hot carriers
Languages : en
Pages : 170
Book Description
Hot-electron Effects in Si MOSFETs
Author: Simon Mun-Kong TamHot-carrier Effects in Thin Gate Oxide MOSFET's
Author: Leng Kian SeePublisher:
ISBN:
Category : Hot carriers
Languages : en
Pages :
Book Description
Hot-Carrier Reliability of MOS VLSI Circuits
Author: Yusuf LeblebiciPublisher: Springer Science & Business Media
ISBN: 1461532507
Category : Technology & Engineering
Languages : en
Pages : 223
Book Description
As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
Short Channel Effects in Hot Carrier Degradation of MOSFETs
Author: Krishnaraj S. RaoPublisher:
ISBN:
Category : Hot carriers
Languages : en
Pages : 172
Book Description