Author: Stanford University. Stanford Electronics LaboratoriesPublisher:
ISBN:
Category :
Languages : en
Pages : 142
Book Description
High Voltage MOS Integrated Circuits
Author: Stanford University. Stanford Electronics LaboratoriesPublisher:
ISBN:
Category :
Languages : en
Pages : 142
Book Description
High Voltage Devices and Circuits in Standard CMOS Technologies
Author: Hussein BallanPublisher: Springer Science & Business Media
ISBN: 079238234X
Category : Technology & Engineering
Languages : en
Pages : 302
Book Description
Standard voltages used in today's ICs may vary from about 1.3V to more than 100V, depending on the technology and the application. High voltage is therefore a relative notion. High Voltage Devices and Circuits in Standard CMOS Technologies is mainly focused on standard CMOS technologies, where high voltage (HV) is defined as any voltage higher than the nominal (low) voltage, i.e. 5V, 3.3V, or even lower. In this standard CMOS environment, IC designers are more and more frequently confronted with HV problems, particularly at the I/O level of the circuit. In the first group of applications, a large range of industrial or consumer circuits either require HV driving capabilities, or are supposed to work in a high-voltage environment. This includes ultrasonic drivers, flat panel displays, robotics, automotive, etc. On the other hand, in the emerging field of integrated microsystems, MEMS actuators mainly make use of electrostatic forces involving voltages in the typical range of 30 to 60V. Last but not least, with the advent of deep sub-micron and/or low-power technologies, the operating voltage tends towards levels ranging from 1V to 2.5V, while the interface needs to be compatible with higher voltages, such as 5V. For all these categories of applications, it is usually preferable to perform most of the signal processing at low voltage, while the resulting output rises to a higher voltage level. Solving this problem requires some special actions at three levels: technology, circuit design and layout. High Voltage Devices and Circuits in Standard CMOS Technologies addresses these topics in a clear and organized way. The theoretical background is supported by practical information and design examples. It is an invaluable reference for researchers and professionals in both the design and device communities.
High Voltage Devices and Circuits in Standard CMOS Technologies
Author: Hussein BallanPublisher: Springer Science & Business Media
ISBN: 1475754043
Category : Technology & Engineering
Languages : en
Pages : 294
Book Description
Standard voltages used in today's ICs may vary from about 1.3V to more than 100V, depending on the technology and the application. High voltage is therefore a relative notion. High Voltage Devices and Circuits in Standard CMOS Technologies is mainly focused on standard CMOS technologies, where high voltage (HV) is defined as any voltage higher than the nominal (low) voltage, i.e. 5V, 3.3V, or even lower. In this standard CMOS environment, IC designers are more and more frequently confronted with HV problems, particularly at the I/O level of the circuit. In the first group of applications, a large range of industrial or consumer circuits either require HV driving capabilities, or are supposed to work in a high-voltage environment. This includes ultrasonic drivers, flat panel displays, robotics, automotive, etc. On the other hand, in the emerging field of integrated microsystems, MEMS actuators mainly make use of electrostatic forces involving voltages in the typical range of 30 to 60V. Last but not least, with the advent of deep sub-micron and/or low-power technologies, the operating voltage tends towards levels ranging from 1V to 2.5V, while the interface needs to be compatible with higher voltages, such as 5V. For all these categories of applications, it is usually preferable to perform most of the signal processing at low voltage, while the resulting output rises to a higher voltage level. Solving this problem requires some special actions at three levels: technology, circuit design and layout. High Voltage Devices and Circuits in Standard CMOS Technologies addresses these topics in a clear and organized way. The theoretical background is supported by practical information and design examples. It is an invaluable reference for researchers and professionals in both the design and device communities.
High Voltage Silicon Gate MOS Integrated Circuits
Author: Krishna Chandra SaraswatPublisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 117
Book Description
MOS Field-effect Transistors and Integrated Circuits
Author: Paul RichmanPublisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 280
Book Description
High Voltage Silicon Gate MOS Integrated Circuits
Author: Krishna Chandra SaraswatPublisher:
ISBN:
Category :
Languages : en
Pages : 117
Book Description
Digital MOS Integrated Circuits
Author: Mohamed I. ElmasryPublisher: New York : IEEE Press : Sole worldwide distributor, Wiley
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 518
Book Description
High Voltage Integrated Circuits
Author: B. Jayant BaligaPublisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 384
Book Description
Very Good,No Highlights or Markup,all pages are intact.
High Voltage Double Diffused MOS Transistors for Integrated Circuits
Author: Stanford University. Stanford Electronics LaboratoriesPublisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 294
Book Description
System Integration
Author: Kurt HoffmannPublisher: John Wiley & Sons
ISBN: 0470020695
Category : Technology & Engineering
Languages : en
Pages : 510
Book Description
The development of large-scale integrated systems on a chip has had a dramatic effect on circuit design methodology. Recent years have seen an escalation of interest in systems level integration (system-on-a-chip) and the development of low power, high chip density circuits and systems. Kurt Hoffmann sets out to address a wide range of issues relating to the design and integration of integrated circuit components and provides readers with the methodology by which simple equations for the estimation of transistor geometries and circuit behaviour can be deduced. The broad coverage of this unique book ranges from field effect transistor design, MOS transistor modelling and the fundamentals of digital CMOS circuit design through to MOS memory architecture and design. Highlights the increasing requirement for information on system-on-a-chip design and integration. Combines coverage of semiconductor physics, digital VLSI design and analog integrated circuits in one volume for the first time. Written with the aim of bridging the gap between semiconductor device physics and practical circuit design. Introduces the basic behaviour of semiconductor components for ICs and covers the design of both digital and analog circuits in CMOS and BiCMOS technologies. Broad coverage will appeal to both students and practising engineers alike. Written by a respected expert in the field with a proven track record of publications in this field. Drawing upon considerable experience within both industry and academia, Hoffmann’s outstanding text, will prove an invaluable resource for designers, practising engineers in the semiconductor device field and electronics systems industry as well as Postgraduate students of microelectronics, electrical and computer engineering.