High Voltage Double Diffused MOS Transistors for Integrated Circuits PDF Download

Author: Stanford University. Stanford Electronics Laboratories
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 294

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Book Description

Author: H. C. Lin
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 84

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Book Description

Author: Paul Richman
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 280

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Author: Stanford University. Stanford Electronics Laboratories
Publisher:
ISBN:
Category :
Languages : en
Pages : 142

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Book Description

Author: Bernhard Wicht
Publisher: John Wiley & Sons
ISBN: 1119123089
Category : Technology & Engineering
Languages : en
Pages : 484

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Book Description
Design of Power Management Integrated Circuits Comprehensive resource on power management ICs affording new levels of functionality and applications with cost reduction in various fields Design of Power Management Integrated Circuits is a comprehensive reference for power management IC design, covering the circuit design of main power management circuits like linear and switched-mode voltage regulators, along with sub-circuits such as power switches, gate drivers and their supply, level shifters, the error amplifier, current sensing, and control loop design. Circuits for protection and diagnostics, as well as aspects of the physical design like lateral and vertical power delivery, pin-out, floor planning, grounding/supply guidelines, and packaging, are also addressed. A full chapter is dedicated to the design of integrated passives. The text illustrates the application of power management integrated circuits (PMIC) to growth areas like computing, the Internet of Things, mobility, and renewable energy. Includes numerous real-world examples, case studies, and exercises illustrating key design concepts and techniques. Offering a unique insight into this rapidly evolving technology through the author’s experience developing PMICs in both the industrial and academic environment, Design of Power Management Integrated Circuits includes information on: Capacitive, inductive and hybrid DC-DC converters and their essential circuit blocks, covering error amplifiers, comparators, and ramp generators Sensing, protection, and diagnostics, covering thermal protection, inductive loads and clamping structures, under-voltage, reference and power-on reset generation Integrated MOS, MOM and MIM capacitors, integrated inductors Control loop design and PWM generation ensuring stability and fast transient response; subharmonic oscillations in current mode control (analysis and circuit design for slope compensation) DC behavior and DC-related circuit design, covering power efficiency, line and load regulation, error amplifier, dropout, and power transistor sizing Commonly used level shifters (including sizing rules) and cascaded (tapered) driver sizing and optimization guidelines Optimizing the physical design considering packaging, floor planning, EMI, pinout, PCB design and thermal design Design of Power Management Integrated Circuits is an essential resource on the subject for circuit designers/IC designers, system engineers, and application engineers, along with advanced undergraduate students and graduate students in related programs of study.

Author: Hung Chang Lin
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 82

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Book Description

Author: Christian C. Enz
Publisher: John Wiley & Sons
ISBN: 0470855452
Category : Technology & Engineering
Languages : en
Pages : 328

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Book Description
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

Author: Amara Amara
Publisher: Springer Science & Business Media
ISBN: 1402093411
Category : Technology & Engineering
Languages : en
Pages : 215

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Book Description
Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.

Author: Paul R. Gray
Publisher: John Wiley & Sons
ISBN: 0470245999
Category : Technology & Engineering
Languages : en
Pages : 896

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Book Description
This is the only comprehensive book in the market for engineers that covers the design of CMOS and bipolar analog integrated circuits. The fifth edition retains its completeness and updates the coverage of bipolar and CMOS circuits. A thorough analysis of a new low-voltage bipolar operational amplifier has been added to Chapters 6, 7, 9, and 11. Chapter 12 has been updated to include a fully differential folded cascode operational amplifier example. With its streamlined and up-to-date coverage, more engineers will turn to this resource to explore key concepts in the field.

Author: Marco Berkhout
Publisher: Springer Science & Business Media
ISBN: 1461560837
Category : Technology & Engineering
Languages : en
Pages : 221

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Book Description
Integrated Audio Amplifiers in BCD Technology is the first book to describe the design at Audio Amplifiers using a Bipolar CMOS DMOS (BCD) process. It shows how the combination of the 3 processes, made available by advances in process technology, gives rise to the design of more robust and powerful audio amplifiers which can be more easily implemented in digital and mixed-signal circuits. Integrated Audio Amplifiers in BCD Technology starts with an introduction to audio amplifiers which includes a comparison of amplifier classes, general design considerations and a list of specifications for integrated audio power amplifiers. This is followed by an extensive discussion of the properties of DMOS transistors which are the key components in BCD technologies. Then the theory and the design of chargepump circuits is considered. In most BCD technologies only n-type DMOS transistors are available. Therefore a boosted supply voltage is required to achieve rail-to-rail output capability which can be generated with a chargepump. The new solutions that are found can also be used for many applications where DC-DC conversion with low output ripple is needed. Finally the design of audio power amplifier in BCD technology is discussed. The design concentrates on a new quiescent control circuit with very high ratio between quiescent current and maximum output current and on the output stage topologies. The problem of controlling the DMOS output transistors over a wide range of currents either saturated or non saturated requires a completely new design of the driving circuits that utilize of the special properties of the DMOS transistor. Integrated Audio Amplifiers in BCD Technology is essential reading for practising analog design engineers and researchers in the field. It is also suitable as a text for an advanced course on the subject. With a foreword by Ed van Tuijl.