High Speed Semiconductor Physics. Theoretical Approaches and Device Physics PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download High Speed Semiconductor Physics. Theoretical Approaches and Device Physics PDF full book. Access full book title High Speed Semiconductor Physics. Theoretical Approaches and Device Physics by Cliff Orori Mosiori. Download full books in PDF and EPUB format.
Author: Cliff Orori Mosiori Publisher: Anchor Academic Publishing (aap_verlag) ISBN: 3954899329 Category : Science Languages : en Pages : 390
Book Description
Solid state physics is a fascinating sub-genre of condensed matter physics - though some graduate students consider it a very boring and tedious subject area in Physics and others even call it a “squalid state”. Topics covered in this book are built on standard solid state physics references available in most online libraries or in other books on solid state physics. The complexity of high speed semiconductor physics and related devices arose from condensed solid state matter. The content covered in this book gives a deep coverage on some topics or sections that may be covered only superficially in other literature. Therefore, these topics are likely to differ a great deal from what is deemed important elsewhere in other books or available literature. There are many extremely good books on solid-state physics and condensed matter physics but very few of these books are restricted to high speed semiconductor physic though. Chapter one covers the general semiconductor qualities that make high speed semiconductor devices effect and includes the theory of crystals, diffusion and ist mechanisms, while chapter two covers solid state materials, material processing for high speed semiconductor devices and an introduction to quantum theory for materials in relation to density of states of the radiation for a black body and ist radiation properties. Chapter three discuss high speed semiconductor energy band theory, energy bands in general solid semiconductor materials, the Debye model, the Einstein model the Debye model and semiconductor transport carriers in 3D semiconductors while chapter four discuss effect of external force on current flow based on the concept of holes valence band, and lattice scattering in high speed devices. Chapter five briefly describes solid state thermoelectric fundamentals, thermoelectric material and thermoelectric theory of solids in lattice and phonons while chapter six scattering in high field effect in semiconductors in inter-valley electron scattering and the associated Fermi Dirac statistics and Maxwell-Boltzmann approximation on their carrier concentration variation with energy in extrinsic doping chapter seven covers p-n junction diodes, varactor diode, pin diode Schottky diode and their transient response of diode in multi-valley semiconductors. Chapter eight discusses high speed metal semiconductor field effect transistors.
Author: Cliff Orori Mosiori Publisher: Anchor Academic Publishing (aap_verlag) ISBN: 3954899329 Category : Science Languages : en Pages : 390
Book Description
Solid state physics is a fascinating sub-genre of condensed matter physics - though some graduate students consider it a very boring and tedious subject area in Physics and others even call it a “squalid state”. Topics covered in this book are built on standard solid state physics references available in most online libraries or in other books on solid state physics. The complexity of high speed semiconductor physics and related devices arose from condensed solid state matter. The content covered in this book gives a deep coverage on some topics or sections that may be covered only superficially in other literature. Therefore, these topics are likely to differ a great deal from what is deemed important elsewhere in other books or available literature. There are many extremely good books on solid-state physics and condensed matter physics but very few of these books are restricted to high speed semiconductor physic though. Chapter one covers the general semiconductor qualities that make high speed semiconductor devices effect and includes the theory of crystals, diffusion and ist mechanisms, while chapter two covers solid state materials, material processing for high speed semiconductor devices and an introduction to quantum theory for materials in relation to density of states of the radiation for a black body and ist radiation properties. Chapter three discuss high speed semiconductor energy band theory, energy bands in general solid semiconductor materials, the Debye model, the Einstein model the Debye model and semiconductor transport carriers in 3D semiconductors while chapter four discuss effect of external force on current flow based on the concept of holes valence band, and lattice scattering in high speed devices. Chapter five briefly describes solid state thermoelectric fundamentals, thermoelectric material and thermoelectric theory of solids in lattice and phonons while chapter six scattering in high field effect in semiconductors in inter-valley electron scattering and the associated Fermi Dirac statistics and Maxwell-Boltzmann approximation on their carrier concentration variation with energy in extrinsic doping chapter seven covers p-n junction diodes, varactor diode, pin diode Schottky diode and their transient response of diode in multi-valley semiconductors. Chapter eight discusses high speed metal semiconductor field effect transistors.
Author: Cliff Orori Mosiori Publisher: Anchor Academic Publishing ISBN: 3954894327 Category : Science Languages : en Pages : 393
Book Description
Solid state physics is a fascinating sub-genre of condensed matter physics - though some graduate students consider it a very boring and tedious subject area in Physics and others even call it a “squalid state”. Topics covered in this book are built on standard solid state physics references available in most online libraries or in other books on solid state physics. The complexity of high speed semiconductor physics and related devices arose from condensed solid state matter. The content covered in this book gives a deep coverage on some topics or sections that may be covered only superficially in other literature. Therefore, these topics are likely to differ a great deal from what is deemed important elsewhere in other books or available literature. There are many extremely good books on solid-state physics and condensed matter physics but very few of these books are restricted to high speed semiconductor physic though. Chapter one covers the general semiconductor qualities that make high speed semiconductor devices effect and includes the theory of crystals, diffusion and ist mechanisms, while chapter two covers solid state materials, material processing for high speed semiconductor devices and an introduction to quantum theory for materials in relation to density of states of the radiation for a black body and ist radiation properties. Chapter three discuss high speed semiconductor energy band theory, energy bands in general solid semiconductor materials, the Debye model, the Einstein model the Debye model and semiconductor transport carriers in 3D semiconductors while chapter four discuss effect of external force on current flow based on the concept of holes valence band, and lattice scattering in high speed devices. Chapter five briefly describes solid state thermoelectric fundamentals, thermoelectric material and thermoelectric theory of solids in lattice and phonons while chapter six scattering in high field effect in semiconductors in inter-valley electron scattering and the associated Fermi Dirac statistics and Maxwell-Boltzmann approximation on their carrier concentration variation with energy in extrinsic doping chapter seven covers p-n junction diodes, varactor diode, pin diode Schottky diode and their transient response of diode in multi-valley semiconductors. Chapter eight discusses high speed metal semiconductor field effect transistors.
Author: Robert W. Keyes Publisher: Wiley ISBN: 9781119012016 Category : Technology & Engineering Languages : en Pages : 848
Book Description
An introduction to the fundamentals of semiconductor physics and engineering This book discusses fundamental semiconductor physics of devices and on-chip interconnections for physicists and links these concepts to engineering applications and case studies of computer chips. The book is organized in three parts. The first part deals with the representation of information and computation. The second part covers semiconductor device physics within the context of computation. The third part reviews chip design and semiconductor fabrication. The book includes relevant equations, with the aim of closing the gap in the existing literature with actual case studies and engineering applications. Examples are provided in each chapter to illustrate physical and electrical concepts through the use of high-performance silicon technologies. Introductory Semiconductor Device Physics for Chip Design and Manufacturing: Provides physical descriptions and illustrations with data visualizations to facilitate intuitive understanding of semiconductor physics, devices and on-chip interconnections Blends theoretical physics treatment with engineering applications and real case studies for manufactured chips Presents complementary-metal-oxide-semiconductor (CMOS) transistors in high-performance server microprocessors with static CMOS combinational digital circuit design examples Offers a rich array of student problem sets, mid-term exams, and final exams with a glossary at the end of the book M. Y. Lanzerotti, PhD, has over 15 years of engineering experience in designing integrated circuits for high-performance server chips and aerospace applications. Dr. Lanzerotti is Assistant Professor of Physics at Augsburg College and previously held positions as Associate Professor of Computer Engineering at Air Force Institute of Technology, Instructor at Harvard Summer School, Visiting Faculty Fellow at Pacific Lutheran University, Visiting Faculty Fellow at Sapienza University of Rome, and Research Staff Member at IBM Thomas J. Watson Research Center. This book is inspired from Dr. Lanzerotti’s course, “Introductory Semiconductor Device Physics for Chip Design and Manufacturing,” at Harvard Summer School. Dr. Lanzerotti holds physics degrees from Harvard College, the University of Cambridge, and Cornell University. Dr. Lanzerotti holds four U.S. patents, was awarded an IEEE Technical Innovation Award in 2007 and an IBM Outstanding Research Contribution Award in 1998, and was Editor-in-Chief of the IEEE Solid-State Circuits Society Magazine.
Author: Robert W. Keyes Publisher: Wiley ISBN: 9780470624548 Category : Technology & Engineering Languages : en Pages : 0
Book Description
An introduction to the fundamentals of semiconductor physics and engineering This book discusses fundamental semiconductor physics of devices and on-chip interconnections for physicists and links these concepts to engineering applications and case studies of computer chips. The book is organized in three parts. The first part deals with the representation of information and computation. The second part covers semiconductor device physics within the context of computation. The third part reviews chip design and semiconductor fabrication. The book includes relevant equations, with the aim of closing the gap in the existing literature with actual case studies and engineering applications. Examples are provided in each chapter to illustrate physical and electrical concepts through the use of high-performance silicon technologies. Introductory Semiconductor Device Physics for Chip Design and Manufacturing: Provides physical descriptions and illustrations with data visualizations to facilitate intuitive understanding of semiconductor physics, devices and on-chip interconnections Blends theoretical physics treatment with engineering applications and real case studies for manufactured chips Presents complementary-metal-oxide-semiconductor (CMOS) transistors in high-performance server microprocessors with static CMOS combinational digital circuit design examples Offers a rich array of student problem sets, mid-term exams, and final exams with a glossary at the end of the book M. Y. Lanzerotti, PhD, has over 15 years of engineering experience in designing integrated circuits for high-performance server chips and aerospace applications. Dr. Lanzerotti is Assistant Professor of Physics at Augsburg College and previously held positions as Associate Professor of Computer Engineering at Air Force Institute of Technology, Instructor at Harvard Summer School, Visiting Faculty Fellow at Pacific Lutheran University, Visiting Faculty Fellow at Sapienza University of Rome, and Research Staff Member at IBM Thomas J. Watson Research Center. This book is inspired from Dr. Lanzerotti’s course, “Introductory Semiconductor Device Physics for Chip Design and Manufacturing,” at Harvard Summer School. Dr. Lanzerotti holds physics degrees from Harvard College, the University of Cambridge, and Cornell University. Dr. Lanzerotti holds four U.S. patents, was awarded an IEEE Technical Innovation Award in 2007 and an IBM Outstanding Research Contribution Award in 1998, and was Editor-in-Chief of the IEEE Solid-State Circuits Society Magazine.
Author: Mary Lanzerotti Publisher: Springer ISBN: 9783030436421 Category : Technology & Engineering Languages : en Pages : 855
Book Description
This textbook book discusses fundamental semiconductor physics of devices and on-chip interconnections and links these concepts to engineering applications and case studies of computer chips. The book is organized in three parts. The first part deals with the representation of information and computation. The second part covers semiconductor device physics within the context of computation. The third part reviews chip design and semiconductor fabrication. The book includes relevant equations, with the aim of closing the gap in the existing literature with actual case studies and engineering applications. Examples are provided in each chapter to illustrate physical and electrical concepts through the use of high-performance silicon technologies.
Author: Vitalii K Dugaev Publisher: CRC Press ISBN: 1000462293 Category : Science Languages : en Pages : 397
Book Description
This textbook provides a theoretical background for contemporary trends in solid-state theory and semiconductor device physics. It discusses advanced methods of quantum mechanics and field theory and is therefore primarily intended for graduate students in theoretical and experimental physics who have already studied electrodynamics, statistical physics, and quantum mechanics. It also relates solid-state physics fundamentals to semiconductor device applications and includes auxiliary results from mathematics and quantum mechanics, making the book useful also for graduate students in electrical engineering and material science. Key Features: Explores concepts common in textbooks on semiconductors, in addition to topics not included in similar books currently available on the market, such as the topology of Hilbert space in crystals Contains the latest research and developments in the field Written in an accessible yet rigorous manner
Author: Vitalii K Dugaev Publisher: CRC Press ISBN: 1000462331 Category : Science Languages : en Pages : 373
Book Description
This textbook provides a theoretical background for contemporary trends in solid-state theory and semiconductor device physics. It discusses advanced methods of quantum mechanics and field theory and is therefore primarily intended for graduate students in theoretical and experimental physics who have already studied electrodynamics, statistical physics, and quantum mechanics. It also relates solid-state physics fundamentals to semiconductor device applications and includes auxiliary results from mathematics and quantum mechanics, making the book useful also for graduate students in electrical engineering and material science. Key Features: Explores concepts common in textbooks on semiconductors, in addition to topics not included in similar books currently available on the market, such as the topology of Hilbert space in crystals Contains the latest research and developments in the field Written in an accessible yet rigorous manner
Author: Ming-Fu Li Publisher: World Scientific ISBN: 1848164068 Category : Technology & Engineering Languages : en Pages : 529
Book Description
This book on solid state physics has been written with an emphasis on recent developments in quantum many-body physics approaches. It starts by covering the classical theory of solids and electrons and describes how this classical model has failed. The authors then present the quantum mechanical model of electrons in a lattice and they also discuss the theory of conductivity. Extensive reviews on the topic are provided in a compact manner so that any non-specialist can follow from the beginning.The authors cover the system of magnetism in a similar way and various problems in magnetic materials are discussed. The book also discusses the Ising chain, the Heisenberg model, the Kondo effect and superconductivity, amongst other relevant topics.In the final chapter, the authors present some works related to contemporary research topics, such as quantum entanglement in many-body systems and quantum simulations. They also include a short review of some of the possible applications of solid state quantum information in biological systems.
Author: C. Y. Chang Publisher: John Wiley & Sons ISBN: 9780471856412 Category : Technology & Engineering Languages : en Pages : 632
Book Description
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Author: A. Miller Publisher: CRC Press ISBN: 1000154378 Category : Science Languages : en Pages : 990
Book Description
The development and application of low-dimensional semiconductors have been rapid and spectacular during the past decade. Ever improving epitaxial growth and device fabrication techniques have allowed access to some remarkable new physics in quantum confined structures while a plethora of new devices has emerged. The field of optoelectronics in particular has benefited from these advances both in terms of improved performance and the invention of fundamentally new types of device, at a time when the use of optics and lasers in telecommunications, broadcasting, the Internet, signal processing, and computing has been rapidly expanding. An appreciation of the physics of quantum and dynamic electronic processes in confined structures is key to the understanding of many of the latest devices and their continued development. Semiconductor Quantum Optoelectronics covers new physics and the latest device developments in low-dimensional semiconductors. It allows those who already have some familiarity with semiconductor physics and devices to broaden and expand their knowledge into new and expanding topics in low-dimensional semiconductors. The book provides pedagogical coverage of selected areas of new and pertinent physics of low-dimensional structures and presents some optoelectronic devices presently under development. Coverage includes material and band structure issues and the physics of ultrafast, nonlinear, coherent, intersubband, and intracavity phenomena. The book emphasizes various devices, including quantum wells, visible, quantum cascade, and mode-locked lasers; microcavity LEDs and VCSELs; and detectors and logic elements. An underlying theme is high-speed phenomena and devices for increased system bandwidths.
Author: Cliff Orori Mosiori
Author: Cliff Orori Mosiori
Author: Cliff Orori Mosiori
Author: Robert W. Keyes
Author: Robert W. Keyes
Author: Mary Lanzerotti
Author: Vitalii K Dugaev
Author: Vitalii K Dugaev
Author: Ming-Fu Li
Author: C. Y. Chang
Author: A. Miller