High-speed Integrated Circuit Technology PDF Download

Author: Mark J. W. Rodwell
Publisher: World Scientific
ISBN: 9810246382
Category : Technology & Engineering
Languages : en
Pages : 372

View

Book Description
This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology.

Author: Patrick Roblin
Publisher: Cambridge University Press
ISBN: 1139437461
Category : Technology & Engineering
Languages : en
Pages : 726

View

Book Description
Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

Author: Tho T. Vu
Publisher: World Scientific
ISBN: 9812383115
Category : Technology & Engineering
Languages : en
Pages : 363

View

Book Description
This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. Contents: Present and Future of High-Speed Compound Semiconductor IC's (T Otsuji); Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.

Author: A. G. Baca
Publisher: The Electrochemical Society
ISBN: 9781566772853
Category : Technology & Engineering
Languages : en
Pages : 230

View

Book Description
The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR

Author:
Publisher: Newnes
ISBN: 0080932282
Category : Science
Languages : en
Pages : 3572

View

Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Author: Pietro della Casa
Publisher: Cuvillier Verlag
ISBN: 3736963971
Category : Science
Languages : en
Pages : 250

View

Book Description
This work is about two-step epitaxial growth using metalorganic vapor-phase epitaxy (MOVPE) for the realization of edge-emitting near-infrared laser diodes. The fabricated gallium arsenide-based devices fall into two categories: high-power lasers (watt range, multimodal) and tunable lasers (milliwatt range, monomodal). Common to both cases is that surface contamination – particularly that due to oxygen – needs to be removed before regrowth. Thus, in-situ etching with carbon tetrabromide (CBr4) is first studied. The experimental results include kinetic data, the effects of different etching conditions as well as substrate characteristics, and the effectiveness in reducing surface contamination. These investigations pave the way to devices based on 2-step epitaxy combined with in-situ etching. Correspondingly, thermally-tuned SG-DBR lasers operating around 975 nm have been successfully realized, obtaining a tuning range of 21 nm. In addition, the possibility of using electronic tuning in similar devices has been explored. High-power broad-area lasers have also been realized, using two-step epitaxy combined with ex-situ and in-situ etching, to create a buried, shallow “mesa” containing the active zone. This approach allows introducing lateral electrical and optical confinement, and – simultaneously – non-absorbing mirrors at the laser facets. Additionally, a different strategy to create a buried current aperture is presented, which is based on ion implantation followed by epitaxial regrowth. This enables to improve device performance and simultaneously introduce non-absorbing mirrors at the facets with correspondingly increased reliability.

Author: Heike Christopher
Publisher: Cuvillier Verlag
ISBN: 3736963998
Category : Science
Languages : en
Pages : 206

View

Book Description
Optical frequency combs (OFC) have revolutionized various applications in applied and fundamental sciences that rely on the determination of absolute optical frequencies and frequency differences. The latter requires only stabilization of the spectral distance between the individual comb lines of the OFC, allowing to tailor and reduce system complexity of the OFC generator (OFCG). One such application is the quantum test of the universality of free fall within the QUANTUS experimental series. Within the test, the rate of free fall of two atomic species, Rb and K, in micro-gravity will be compared. The aim of this thesis was the development of a highly compact, robust, and space-suitable diode laser-based OFCG with a mode-locked optical spectrum in the wavelength range around 780 nm. A diode laser-based OFCG was developed, which exceeds the requirements with a spectral bandwidth > 16 nm at 20 dBc, a comb line optical power > 650 nW (at 20 dBc), a pulse repetition rate of 3.4 GHz, and an RF linewidth of the free-running pulse repetition rate < 10 kHz. To realize a proof-of-concept demonstrator module, the diode laser-based OFCG was hybrid-integrated into a space-suitable technology platform that has been developed for future QUANTUS experiments. Proof of sufficient RF stability of the OFCG was provided by stabilizing the pulse repetition rate to an external RF reference. This resulted in a stabilized pulse repetition rate with an RF linewidth smaller than 1.4 Hz (resolution limited), thus exceeding the requirement. The developed diode laser-based OFCG represents an important step towards an improved comparison of the rate of free fall of Rb and K quantum gases within the QUANTUS experiments in micro-gravity.

Author: Thi Nghiem Vu
Publisher: Cuvillier Verlag
ISBN: 3736984804
Category : Science
Languages : en
Pages : 138

View

Book Description
This work aims at designing and characterizing diode laser based master oscillator power amplifier (MOPA) systems, which are targeted to be implemented into micro light detection and ranging (LIDAR) or differential absorption LIDAR (DIAL) systems for water vapor and aerosol detections. These light sources operate in the ns-pulse regime at a repetition rate of 25 kHz, leading to a resolution in the meter range in an altitude of 6 km. The monolithic MOPA, where Master Oscillator (MO) and Power Amplifier (PA) are integrated on one single chip, operates at 1064 nm wavelength. A peak power of 16.3 W with a pulse width of 3 ns was obtained. A spectral linewidth of about 150 pm and a side mode suppression ratio (SMSR) of 30 dB was observed. A ratio of 9% between the amplified spontaneous emission (ASE) and the laser was estimated. These spectral properties fulfill the requirements for aerosol detection. The hybrid MOPA systems have separate chips for MO and PA. Different hybrid MOPA systems provide a stabilized wavelength at 1064 nm, a tunable wavelength around 975 nm and a dual wavelength around 964 nm. They therefore enable to detect a well-defined absorption line, scan over absorption line and switch between on/off line in DIAL applications, respectively. Their spectral linewidth is below 10 pm, limited by the resolution of the spectrum analyzer. An SMSR of more than 50 dB for the MO and of more than 37 dB for the whole MOPA was reached. A ratio between ASE and laser below 1% was estimated. These spectral properties meet the requirements for water vapor absorption lines detection at atmospheric condition. Diode laser based MOPA systems were therefore proven to be potential light sources for micro-pulse-LIDAR systems – the basis for a new generation of ultra-compact, low-cost systems.

Author: Robert Leoni
Publisher: World Scientific
ISBN: 9814480800
Category : Technology & Engineering
Languages : en
Pages : 314

View

Book Description
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.

Author: Anissa Zeghuzi
Publisher: Cuvillier Verlag
ISBN: 3736962894
Category : Science
Languages : en
Pages : 176

View

Book Description
Broad-area lasers are edge-emitting semiconductor lasers with a wide lateral emission aperture. This feature enables high output powers but also diminishes the lateral beam quality and results in their inherently non-stationary behavior. Research in the area is driven by application, and the main objective is to increase the brightness, which includes both output power and lateral beam quality. To understand the underlying spatio-temporal phenomena and to apply this knowledge in order to reduce costs for brightness optimization, a self-consistent simulation tool taking all essential processes into account is vital. Firstly, in this work a quasi-three-dimensional opto-electronic and thermal model is presented that describes essential qualitative characteristics of real devices well. Time-dependent traveling-wave equations are utilized to characterize the inherently non-stationary optical fields, which are coupled to dynamic rate equations for the excess carriers in the active region. This model is extended by an injection-current-density model to accurately include lateral current spreading and spatial hole burning. Furthermore, a temperature model is presented that includes short-time local heating near the active region as well as the formation of a stationary temperature profile. Secondly, the reasons of brightness degradation, i.e. the origins of power saturation and the spatially modulated field profile, are investigated. And lastly, designs that mitigate those effects limiting the lateral brightness under pulsed and continuous-wave operation are discussed. Amongst those designs a novel “chessboard laser” is presented that utilizes longitudinal-lateral gain-loss modulation and an additional phase tailoring to obtain a very low far-field divergence.